GB1251732A - - Google Patents
Info
- Publication number
- GB1251732A GB1251732A GB1251732DA GB1251732A GB 1251732 A GB1251732 A GB 1251732A GB 1251732D A GB1251732D A GB 1251732DA GB 1251732 A GB1251732 A GB 1251732A
- Authority
- GB
- United Kingdom
- Prior art keywords
- guard
- guard region
- transistor
- annular
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76689468A | 1968-10-11 | 1968-10-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1251732A true GB1251732A (xx) | 1971-10-27 |
Family
ID=25077853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1251732D Expired GB1251732A (xx) | 1968-10-11 | 1969-09-26 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4941957B1 (xx) |
| BE (1) | BE740085A (xx) |
| CH (1) | CH494474A (xx) |
| DE (1) | DE1948052C3 (xx) |
| FR (1) | FR2020370B1 (xx) |
| GB (1) | GB1251732A (xx) |
| NL (1) | NL164159C (xx) |
| SE (1) | SE359403B (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2240427A (en) * | 1990-01-25 | 1991-07-31 | Nissan Motor | Guard rings for semiconductor devices |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
| FR1538402A (fr) * | 1967-06-30 | 1968-09-06 | Radiotechnique Coprim Rtc | Procédé de fabrication de dispositifs semi-conducteurs intégrés |
-
1969
- 1969-09-02 FR FR6930696A patent/FR2020370B1/fr not_active Expired
- 1969-09-23 NL NL6914376A patent/NL164159C/xx not_active IP Right Cessation
- 1969-09-23 DE DE19691948052 patent/DE1948052C3/de not_active Expired
- 1969-09-26 GB GB1251732D patent/GB1251732A/en not_active Expired
- 1969-09-30 JP JP7747569A patent/JPS4941957B1/ja active Pending
- 1969-10-06 CH CH1498069A patent/CH494474A/de not_active IP Right Cessation
- 1969-10-07 SE SE1377469A patent/SE359403B/xx unknown
- 1969-10-10 BE BE740085D patent/BE740085A/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2240427A (en) * | 1990-01-25 | 1991-07-31 | Nissan Motor | Guard rings for semiconductor devices |
| US5184204A (en) * | 1990-01-25 | 1993-02-02 | Nissan Motor Co., Ltd. | Semiconductor device with high surge endurance |
| GB2240427B (en) * | 1990-01-25 | 1993-11-24 | Nissan Motor | Semiconductor device with high surge endurance |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1948052B2 (de) | 1973-11-08 |
| NL164159C (nl) | 1980-11-17 |
| CH494474A (de) | 1970-07-31 |
| FR2020370B1 (xx) | 1973-11-16 |
| SE359403B (xx) | 1973-08-27 |
| JPS4941957B1 (xx) | 1974-11-12 |
| DE1948052C3 (de) | 1975-03-06 |
| BE740085A (xx) | 1970-03-16 |
| NL6914376A (xx) | 1970-04-14 |
| FR2020370A1 (xx) | 1970-07-10 |
| DE1948052A1 (de) | 1970-04-16 |
| NL164159B (nl) | 1980-06-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |