GB1250099A - - Google Patents

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Publication number
GB1250099A
GB1250099A GB1892069A GB1250099DA GB1250099A GB 1250099 A GB1250099 A GB 1250099A GB 1892069 A GB1892069 A GB 1892069A GB 1250099D A GB1250099D A GB 1250099DA GB 1250099 A GB1250099 A GB 1250099A
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GB
United Kingdom
Prior art keywords
layer
glaze
silicon
semi
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1892069A
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English (en)
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Filing date
Publication date
Application filed filed Critical
Publication of GB1250099A publication Critical patent/GB1250099A/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0231—Manufacturing methods of the redistribution layers
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Die Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB1892069A 1969-04-14 1969-04-14 Expired GB1250099A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1892069 1969-04-14

Publications (1)

Publication Number Publication Date
GB1250099A true GB1250099A (fi) 1971-10-20

Family

ID=10120730

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1892069A Expired GB1250099A (fi) 1969-04-14 1969-04-14

Country Status (1)

Country Link
GB (1) GB1250099A (fi)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382094A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Passivation d'une interception de surface d'une jonction pn
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
FR2402303A1 (fr) * 1977-09-03 1979-03-30 Semikron Gleichrichterbau Traitement de surface de stabilisation de corps semi-conducteurs
FR2406309A1 (fr) * 1977-10-11 1979-05-11 Western Electric Co Dispositf optique a semiconducteurs comportant un revetement de verre
FR2423866A1 (fr) * 1978-04-18 1979-11-16 Westinghouse Electric Corp Diode encapsulee dans du verre
GB2180991A (en) * 1985-08-28 1987-04-08 Mitsubishi Electric Corp Silicide electrode for semiconductor device
US4729969A (en) * 1985-09-05 1988-03-08 Mitsubishi Denki Kabushiki Kaisha Method for forming silicide electrode in semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382094A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Passivation d'une interception de surface d'une jonction pn
FR2382095A1 (fr) * 1977-02-24 1978-09-22 Rca Corp Structure de passivation en plusieurs couches et procede de fabrication
FR2402303A1 (fr) * 1977-09-03 1979-03-30 Semikron Gleichrichterbau Traitement de surface de stabilisation de corps semi-conducteurs
FR2406309A1 (fr) * 1977-10-11 1979-05-11 Western Electric Co Dispositf optique a semiconducteurs comportant un revetement de verre
FR2423866A1 (fr) * 1978-04-18 1979-11-16 Westinghouse Electric Corp Diode encapsulee dans du verre
GB2180991A (en) * 1985-08-28 1987-04-08 Mitsubishi Electric Corp Silicide electrode for semiconductor device
US4729969A (en) * 1985-09-05 1988-03-08 Mitsubishi Denki Kabushiki Kaisha Method for forming silicide electrode in semiconductor device

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