GB1248164A - Improvements in and relating to methods of manufacturing crystalline compounds - Google Patents

Improvements in and relating to methods of manufacturing crystalline compounds

Info

Publication number
GB1248164A
GB1248164A GB2416/69A GB241669A GB1248164A GB 1248164 A GB1248164 A GB 1248164A GB 2416/69 A GB2416/69 A GB 2416/69A GB 241669 A GB241669 A GB 241669A GB 1248164 A GB1248164 A GB 1248164A
Authority
GB
United Kingdom
Prior art keywords
crystal
compound
pulling
gallium
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2416/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1248164A publication Critical patent/GB1248164A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB2416/69A 1968-01-18 1969-01-15 Improvements in and relating to methods of manufacturing crystalline compounds Expired GB1248164A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR136487 1968-01-18
FR6909096A FR2038715A6 (en) 1968-01-18 1969-03-27 Semiconductor cystal drawing apparatus

Publications (1)

Publication Number Publication Date
GB1248164A true GB1248164A (en) 1971-09-29

Family

ID=62495386

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2416/69A Expired GB1248164A (en) 1968-01-18 1969-01-15 Improvements in and relating to methods of manufacturing crystalline compounds

Country Status (7)

Country Link
US (1) US3627499A (enrdf_load_stackoverflow)
JP (1) JPS4822900B1 (enrdf_load_stackoverflow)
CH (1) CH517504A (enrdf_load_stackoverflow)
DE (1) DE1901331C3 (enrdf_load_stackoverflow)
FR (2) FR1568042A (enrdf_load_stackoverflow)
GB (1) GB1248164A (enrdf_load_stackoverflow)
NL (1) NL6900613A (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1366532A (en) * 1971-04-21 1974-09-11 Nat Res Dev Apparatus for the preparation and growth of crystalline material
BE795938A (fr) * 1972-03-01 1973-08-27 Siemens Ag Procede de fabrication d'une barre d'arseniure de gallium monocristalline exempte de dislocation
US3902860A (en) * 1972-09-28 1975-09-02 Sumitomo Electric Industries Thermal treatment of semiconducting compounds having one or more volatile components
US3933435A (en) * 1973-05-30 1976-01-20 Arthur D. Little, Inc. Apparatus for direct melt synthesis of compounds containing volatile constituents
DE2420899A1 (de) * 1974-04-30 1975-12-11 Wacker Chemitronic Verfahren zur herstellung von einkristallinem galliumarsenid
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
DE2639563A1 (de) * 1976-09-02 1978-03-09 Wacker Chemitronic Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4352784A (en) * 1979-05-25 1982-10-05 Western Electric Company, Inc. Double crucible Czochralski crystal growth apparatus
US4456499A (en) * 1979-05-25 1984-06-26 At&T Technologies, Inc. Double crucible Czochralski crystal growth method
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS60112695A (ja) * 1983-11-22 1985-06-19 Sumitomo Electric Ind Ltd 化合物単結晶の引上方法
JPS60264390A (ja) * 1984-06-08 1985-12-27 Sumitomo Electric Ind Ltd 単結晶の育成方法
US9741881B2 (en) 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
FR2853562B1 (fr) * 2003-04-14 2006-08-11 Centre Nat Rech Scient Procede de fabrication de granules semiconducteurs
JP4869061B2 (ja) 2003-04-14 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 焼結された半導体材料
US8192648B2 (en) 2003-04-14 2012-06-05 S'tile Method for forming a sintered semiconductor material
US8405183B2 (en) 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
US9493358B2 (en) 2003-04-14 2016-11-15 Stile Photovoltaic module including integrated photovoltaic cells

Also Published As

Publication number Publication date
DE1901331A1 (de) 1969-07-31
JPS4822900B1 (enrdf_load_stackoverflow) 1973-07-10
NL6900613A (enrdf_load_stackoverflow) 1969-07-22
DE1901331C3 (de) 1981-01-08
FR2038715A6 (en) 1971-01-08
FR1568042A (enrdf_load_stackoverflow) 1969-05-23
CH517504A (de) 1972-01-15
DE1901331B2 (de) 1980-04-24
US3627499A (en) 1971-12-14

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