GB1248164A - Improvements in and relating to methods of manufacturing crystalline compounds - Google Patents
Improvements in and relating to methods of manufacturing crystalline compoundsInfo
- Publication number
- GB1248164A GB1248164A GB2416/69A GB241669A GB1248164A GB 1248164 A GB1248164 A GB 1248164A GB 2416/69 A GB2416/69 A GB 2416/69A GB 241669 A GB241669 A GB 241669A GB 1248164 A GB1248164 A GB 1248164A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- compound
- pulling
- gallium
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 3
- 229910052733 gallium Inorganic materials 0.000 abstract 3
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 150000004678 hydrides Chemical class 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 238000005192 partition Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000003039 volatile agent Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,248,164. Crystal-pulling. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 15 Jan., 1969 [18 Jan., 1968], No. 2416/ . 69. Heading B1S. In the crystal-pulling of a compound from a solution, the compound is replenished by absorption in the solution at a position separated from the crystal-pulling surface of (a) a preformed crystal of the compound, (b) the separate components, or (c) at least one non- volatile component, the solvent comprising at least one non-volatile component (with reaction in solution in (b) and (c). The compound may be the arsenide or phosphide of gallium or gallium/indium, or the arsenide/phosphide of gallium. Arsenic may be supplied as hydride or halide. A volatile component may be absorbed through a porous wall 8 (Fig. 1) or into upper surface 29 separated from the crystal-pulling upper surface 44 by a downwardly extending partition 30 (Fig. 2). In a modification of the latter (not shown), a porous wall separating upper surface 28 from the volatile compound replaces wall 28.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR136487 | 1968-01-18 | ||
| FR6909096A FR2038715A6 (en) | 1968-01-18 | 1969-03-27 | Semiconductor cystal drawing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1248164A true GB1248164A (en) | 1971-09-29 |
Family
ID=62495386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2416/69A Expired GB1248164A (en) | 1968-01-18 | 1969-01-15 | Improvements in and relating to methods of manufacturing crystalline compounds |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3627499A (en) |
| JP (1) | JPS4822900B1 (en) |
| CH (1) | CH517504A (en) |
| DE (1) | DE1901331C3 (en) |
| FR (2) | FR1568042A (en) |
| GB (1) | GB1248164A (en) |
| NL (1) | NL6900613A (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1366532A (en) * | 1971-04-21 | 1974-09-11 | Nat Res Dev | Apparatus for the preparation and growth of crystalline material |
| BE795938A (en) * | 1972-03-01 | 1973-08-27 | Siemens Ag | METHOD OF MANUFACTURING A DISLOCATION-FREE MONOCRISTALLINE GALLIUM ARSENIDE BAR |
| US3902860A (en) * | 1972-09-28 | 1975-09-02 | Sumitomo Electric Industries | Thermal treatment of semiconducting compounds having one or more volatile components |
| US3933435A (en) * | 1973-05-30 | 1976-01-20 | Arthur D. Little, Inc. | Apparatus for direct melt synthesis of compounds containing volatile constituents |
| DE2420899A1 (en) * | 1974-04-30 | 1975-12-11 | Wacker Chemitronic | METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE |
| US4083748A (en) * | 1975-10-30 | 1978-04-11 | Western Electric Company, Inc. | Method of forming and growing a single crystal of a semiconductor compound |
| DE2639563A1 (en) * | 1976-09-02 | 1978-03-09 | Wacker Chemitronic | Process for the production of crucible-drawn silicon rods with a content of volatile dopants, especially antimony, with close resistance tolerance |
| US4190631A (en) * | 1978-09-21 | 1980-02-26 | Western Electric Company, Incorporated | Double crucible crystal growing apparatus |
| US4456499A (en) * | 1979-05-25 | 1984-06-26 | At&T Technologies, Inc. | Double crucible Czochralski crystal growth method |
| US4352784A (en) * | 1979-05-25 | 1982-10-05 | Western Electric Company, Inc. | Double crucible Czochralski crystal growth apparatus |
| US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
| JPS60112695A (en) * | 1983-11-22 | 1985-06-19 | Sumitomo Electric Ind Ltd | Pulling method of compound single crystal |
| JPS60264390A (en) * | 1984-06-08 | 1985-12-27 | Sumitomo Electric Ind Ltd | Growing method for single crystal |
| US8192648B2 (en) | 2003-04-14 | 2012-06-05 | S'tile | Method for forming a sintered semiconductor material |
| FR2853562B1 (en) | 2003-04-14 | 2006-08-11 | Centre Nat Rech Scient | PROCESS FOR PRODUCING SEMICONDUCTOR PELLETS |
| US8405183B2 (en) | 2003-04-14 | 2013-03-26 | S'Tile Pole des Eco-Industries | Semiconductor structure |
| US9741881B2 (en) | 2003-04-14 | 2017-08-22 | S'tile | Photovoltaic module including integrated photovoltaic cells |
| US9493358B2 (en) | 2003-04-14 | 2016-11-15 | Stile | Photovoltaic module including integrated photovoltaic cells |
| EP1618612A1 (en) | 2003-04-14 | 2006-01-25 | Centre National De La Recherche Scientifique (Cnrs) | Sintered semiconductor material |
-
1968
- 1968-01-18 FR FR136487A patent/FR1568042A/fr not_active Expired
-
1969
- 1969-01-11 DE DE1901331A patent/DE1901331C3/en not_active Expired
- 1969-01-15 NL NL6900613A patent/NL6900613A/xx unknown
- 1969-01-15 CH CH51169A patent/CH517504A/en not_active IP Right Cessation
- 1969-01-15 GB GB2416/69A patent/GB1248164A/en not_active Expired
- 1969-01-18 JP JP44003202A patent/JPS4822900B1/ja active Pending
- 1969-01-21 US US792528*A patent/US3627499A/en not_active Expired - Lifetime
- 1969-03-27 FR FR6909096A patent/FR2038715A6/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1568042A (en) | 1969-05-23 |
| DE1901331A1 (en) | 1969-07-31 |
| DE1901331C3 (en) | 1981-01-08 |
| DE1901331B2 (en) | 1980-04-24 |
| CH517504A (en) | 1972-01-15 |
| FR2038715A6 (en) | 1971-01-08 |
| NL6900613A (en) | 1969-07-22 |
| JPS4822900B1 (en) | 1973-07-10 |
| US3627499A (en) | 1971-12-14 |
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