CH517504A - Verfahren zur Herstellung eines Kristalls - Google Patents

Verfahren zur Herstellung eines Kristalls

Info

Publication number
CH517504A
CH517504A CH51169A CH51169A CH517504A CH 517504 A CH517504 A CH 517504A CH 51169 A CH51169 A CH 51169A CH 51169 A CH51169 A CH 51169A CH 517504 A CH517504 A CH 517504A
Authority
CH
Switzerland
Prior art keywords
crystal
making
Prior art date
Application number
CH51169A
Other languages
German (de)
English (en)
Inventor
Duc Jean-Marc Le
Deyris Emile
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH517504A publication Critical patent/CH517504A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH51169A 1968-01-18 1969-01-15 Verfahren zur Herstellung eines Kristalls CH517504A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR136487 1968-01-18
FR6909096A FR2038715A6 (en) 1968-01-18 1969-03-27 Semiconductor cystal drawing apparatus

Publications (1)

Publication Number Publication Date
CH517504A true CH517504A (de) 1972-01-15

Family

ID=62495386

Family Applications (1)

Application Number Title Priority Date Filing Date
CH51169A CH517504A (de) 1968-01-18 1969-01-15 Verfahren zur Herstellung eines Kristalls

Country Status (7)

Country Link
US (1) US3627499A (enrdf_load_stackoverflow)
JP (1) JPS4822900B1 (enrdf_load_stackoverflow)
CH (1) CH517504A (enrdf_load_stackoverflow)
DE (1) DE1901331C3 (enrdf_load_stackoverflow)
FR (2) FR1568042A (enrdf_load_stackoverflow)
GB (1) GB1248164A (enrdf_load_stackoverflow)
NL (1) NL6900613A (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1366532A (en) * 1971-04-21 1974-09-11 Nat Res Dev Apparatus for the preparation and growth of crystalline material
BE795938A (fr) * 1972-03-01 1973-08-27 Siemens Ag Procede de fabrication d'une barre d'arseniure de gallium monocristalline exempte de dislocation
US3902860A (en) * 1972-09-28 1975-09-02 Sumitomo Electric Industries Thermal treatment of semiconducting compounds having one or more volatile components
US3933435A (en) * 1973-05-30 1976-01-20 Arthur D. Little, Inc. Apparatus for direct melt synthesis of compounds containing volatile constituents
DE2420899A1 (de) * 1974-04-30 1975-12-11 Wacker Chemitronic Verfahren zur herstellung von einkristallinem galliumarsenid
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
DE2639563A1 (de) * 1976-09-02 1978-03-09 Wacker Chemitronic Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
US4456499A (en) * 1979-05-25 1984-06-26 At&T Technologies, Inc. Double crucible Czochralski crystal growth method
US4352784A (en) * 1979-05-25 1982-10-05 Western Electric Company, Inc. Double crucible Czochralski crystal growth apparatus
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS60112695A (ja) * 1983-11-22 1985-06-19 Sumitomo Electric Ind Ltd 化合物単結晶の引上方法
JPS60264390A (ja) * 1984-06-08 1985-12-27 Sumitomo Electric Ind Ltd 単結晶の育成方法
US8405183B2 (en) 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
EP1618612A1 (fr) 2003-04-14 2006-01-25 Centre National De La Recherche Scientifique (Cnrs) Materiau semiconducteur obtenu par frittage
US9493358B2 (en) 2003-04-14 2016-11-15 Stile Photovoltaic module including integrated photovoltaic cells
US9741881B2 (en) 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
FR2853562B1 (fr) * 2003-04-14 2006-08-11 Centre Nat Rech Scient Procede de fabrication de granules semiconducteurs
US8192648B2 (en) 2003-04-14 2012-06-05 S'tile Method for forming a sintered semiconductor material

Also Published As

Publication number Publication date
US3627499A (en) 1971-12-14
GB1248164A (en) 1971-09-29
JPS4822900B1 (enrdf_load_stackoverflow) 1973-07-10
NL6900613A (enrdf_load_stackoverflow) 1969-07-22
FR1568042A (enrdf_load_stackoverflow) 1969-05-23
DE1901331A1 (de) 1969-07-31
FR2038715A6 (en) 1971-01-08
DE1901331C3 (de) 1981-01-08
DE1901331B2 (de) 1980-04-24

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Legal Events

Date Code Title Description
PL Patent ceased