GB1245882A - Power transistor with high -resistivity connection - Google Patents
Power transistor with high -resistivity connectionInfo
- Publication number
- GB1245882A GB1245882A GB24342/69A GB2434269A GB1245882A GB 1245882 A GB1245882 A GB 1245882A GB 24342/69 A GB24342/69 A GB 24342/69A GB 2434269 A GB2434269 A GB 2434269A GB 1245882 A GB1245882 A GB 1245882A
- Authority
- GB
- United Kingdom
- Prior art keywords
- power transistor
- layers
- resistivity connection
- silicon
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73110868A | 1968-05-22 | 1968-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1245882A true GB1245882A (en) | 1971-09-08 |
Family
ID=24938096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24342/69A Expired GB1245882A (en) | 1968-05-22 | 1969-05-13 | Power transistor with high -resistivity connection |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1926016A1 (https=) |
| FR (1) | FR2009108B1 (https=) |
| GB (1) | GB1245882A (https=) |
| NL (1) | NL6907768A (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3504239A (en) * | 1964-01-31 | 1970-03-31 | Rca Corp | Transistor with distributed resistor between emitter lead and emitter region |
| ES313647A1 (es) * | 1964-09-29 | 1965-07-16 | Fairchild Camera Instr Co | Perfeccionamientos en la construccion de transistores |
| NL6706641A (https=) * | 1966-11-07 | 1968-11-13 |
-
1969
- 1969-05-13 GB GB24342/69A patent/GB1245882A/en not_active Expired
- 1969-05-21 NL NL6907768A patent/NL6907768A/xx unknown
- 1969-05-22 DE DE19691926016 patent/DE1926016A1/de active Pending
- 1969-05-22 FR FR6916635A patent/FR2009108B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2009108B1 (https=) | 1974-08-09 |
| DE1926016A1 (de) | 1970-04-02 |
| NL6907768A (https=) | 1969-11-25 |
| FR2009108A1 (https=) | 1970-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1192133A (en) | Bonding Electrically Conductive Metals to Insulators | |
| Klement | Solid solutions in copper-iron alloys quenched rapidly from the melt | |
| GB905553A (en) | Improvements in or relating to the production of semi-conductor devices | |
| GB1225088A (https=) | ||
| GB1245882A (en) | Power transistor with high -resistivity connection | |
| Barrett et al. | High-temperature creep of some dilute copper silicon alloys | |
| GB1095076A (en) | Improved titanium base alloy | |
| GB1373049A (en) | Copper based alloy | |
| Saarivirta | Development of copper base high strength-medium conductivity alloys-Cu-Ti-Sn and Cu-Ti-Sn-Cr | |
| GB1305156A (https=) | ||
| GB930352A (en) | Improvements in or relating to semi-conductor arrangements | |
| GB1207705A (en) | Age hardenable stainless iron base alloys | |
| GB983623A (en) | Improvements relating to semi-conductor devices | |
| Borg | Some Thermodynamic Properties of the Cadmium-Copper System | |
| Johnson et al. | Mechanical and physical properties of five copper-base casting alloys | |
| Shibuya et al. | Experimental Upper Critical Field for Ti-V Alloys | |
| GB1182223A (en) | Strain Meter. | |
| USD196815S (en) | Bottle | |
| GB570722A (en) | Improvements in or relating to metal rectifiers of the selenium type | |
| Ando | Indirect Transition in Narrow Junction of Ge–Si Alloy | |
| GB950794A (en) | Electric wave frequency-converting circuits and systems | |
| KURA | SUMMARY OF THE EFFECT OF ANTIMONY ON THE PROPERTIES OF COPPER AND COPPER-BASE ALLOYS | |
| GB1132112A (en) | Transistor | |
| GB1112766A (en) | An improved alloy | |
| GB1239480A (en) | Improved thyristor device |