GB1229128A - - Google Patents

Info

Publication number
GB1229128A
GB1229128A GB1229128DA GB1229128A GB 1229128 A GB1229128 A GB 1229128A GB 1229128D A GB1229128D A GB 1229128DA GB 1229128 A GB1229128 A GB 1229128A
Authority
GB
United Kingdom
Prior art keywords
substrate
sicl
silicon
masking
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1229128A publication Critical patent/GB1229128A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
GB1229128D 1968-06-14 1969-06-13 Expired GB1229128A (US08197722-20120612-C00042.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769605 DE1769605A1 (de) 1968-06-14 1968-06-14 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente

Publications (1)

Publication Number Publication Date
GB1229128A true GB1229128A (US08197722-20120612-C00042.png) 1971-04-21

Family

ID=5700202

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1229128D Expired GB1229128A (US08197722-20120612-C00042.png) 1968-06-14 1969-06-13

Country Status (8)

Country Link
US (1) US3653991A (US08197722-20120612-C00042.png)
AT (2) AT306794B (US08197722-20120612-C00042.png)
CH (1) CH499879A (US08197722-20120612-C00042.png)
DE (1) DE1769605A1 (US08197722-20120612-C00042.png)
FR (1) FR1595220A (US08197722-20120612-C00042.png)
GB (1) GB1229128A (US08197722-20120612-C00042.png)
NL (1) NL6908366A (US08197722-20120612-C00042.png)
SE (1) SE356439B (US08197722-20120612-C00042.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3634140A1 (de) * 1985-10-07 1987-04-09 Canon Kk Verfahren zur selektiven bildung einer abgeschiedenen schicht
GB2185758A (en) * 1985-12-28 1987-07-29 Canon Kk Method for forming deposited film

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6076652A (en) 1971-04-16 2000-06-20 Texas Instruments Incorporated Assembly line system and apparatus controlling transfer of a workpiece
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
US4349394A (en) * 1979-12-06 1982-09-14 Siemens Corporation Method of making a zener diode utilizing gas-phase epitaxial deposition
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
DE3726971A1 (de) * 1987-08-13 1989-02-23 Standard Elektrik Lorenz Ag Methode zur herstellung planarer epitaxieschichten mittels selektiver metallorganischer gasphasenepitaxie (movpe)
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251614A (US08197722-20120612-C00042.png) * 1959-05-28 1900-01-01
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
US3345209A (en) * 1964-04-02 1967-10-03 Ibm Growth control of disproportionation process
DE1544187A1 (de) * 1964-04-25 1971-03-04 Fujitsu Ltd Verfahren zum Herstellen von Halbleiterkristallen durch Abscheidung aus der Gasphase
NL6513397A (US08197722-20120612-C00042.png) * 1964-11-02 1966-05-03 Siemens Ag
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3345223A (en) * 1965-09-28 1967-10-03 Ibm Epitaxial deposition of semiconductor materials
US3472689A (en) * 1967-01-19 1969-10-14 Rca Corp Vapor deposition of silicon-nitrogen insulating coatings
GB1147014A (en) * 1967-01-27 1969-04-02 Westinghouse Electric Corp Improvements in diffusion masking

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3634140A1 (de) * 1985-10-07 1987-04-09 Canon Kk Verfahren zur selektiven bildung einer abgeschiedenen schicht
US5393646A (en) * 1985-10-07 1995-02-28 Canon Kabushiki Kaisha Method for selective formation of a deposited film
GB2185758A (en) * 1985-12-28 1987-07-29 Canon Kk Method for forming deposited film
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film

Also Published As

Publication number Publication date
US3653991A (en) 1972-04-04
FR1595220A (US08197722-20120612-C00042.png) 1970-06-08
AT306794B (de) 1973-04-25
AT308828B (de) 1973-07-25
CH499879A (de) 1970-11-30
DE1769605A1 (de) 1971-07-01
NL6908366A (US08197722-20120612-C00042.png) 1969-12-16
SE356439B (US08197722-20120612-C00042.png) 1973-05-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees