NL6908366A - - Google Patents

Info

Publication number
NL6908366A
NL6908366A NL6908366A NL6908366A NL6908366A NL 6908366 A NL6908366 A NL 6908366A NL 6908366 A NL6908366 A NL 6908366A NL 6908366 A NL6908366 A NL 6908366A NL 6908366 A NL6908366 A NL 6908366A
Authority
NL
Netherlands
Application number
NL6908366A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6908366A publication Critical patent/NL6908366A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
NL6908366A 1968-06-14 1969-06-02 NL6908366A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769605 DE1769605A1 (de) 1968-06-14 1968-06-14 Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente

Publications (1)

Publication Number Publication Date
NL6908366A true NL6908366A (xx) 1969-12-16

Family

ID=5700202

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6908366A NL6908366A (xx) 1968-06-14 1969-06-02

Country Status (8)

Country Link
US (1) US3653991A (xx)
AT (2) AT306794B (xx)
CH (1) CH499879A (xx)
DE (1) DE1769605A1 (xx)
FR (1) FR1595220A (xx)
GB (1) GB1229128A (xx)
NL (1) NL6908366A (xx)
SE (1) SE356439B (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6076652A (en) 1971-04-16 2000-06-20 Texas Instruments Incorporated Assembly line system and apparatus controlling transfer of a workpiece
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
US4349394A (en) * 1979-12-06 1982-09-14 Siemens Corporation Method of making a zener diode utilizing gas-phase epitaxial deposition
US4522662A (en) * 1983-08-12 1985-06-11 Hewlett-Packard Company CVD lateral epitaxial growth of silicon over insulators
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
DE3726971A1 (de) * 1987-08-13 1989-02-23 Standard Elektrik Lorenz Ag Methode zur herstellung planarer epitaxieschichten mittels selektiver metallorganischer gasphasenepitaxie (movpe)
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133151C (xx) * 1959-05-28 1900-01-01
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
US3345209A (en) * 1964-04-02 1967-10-03 Ibm Growth control of disproportionation process
US3428500A (en) * 1964-04-25 1969-02-18 Fujitsu Ltd Process of epitaxial deposition on one side of a substrate with simultaneous vapor etching of the opposite side
NL6513397A (xx) * 1964-11-02 1966-05-03 Siemens Ag
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3345223A (en) * 1965-09-28 1967-10-03 Ibm Epitaxial deposition of semiconductor materials
US3472689A (en) * 1967-01-19 1969-10-14 Rca Corp Vapor deposition of silicon-nitrogen insulating coatings
GB1147014A (en) * 1967-01-27 1969-04-02 Westinghouse Electric Corp Improvements in diffusion masking

Also Published As

Publication number Publication date
SE356439B (xx) 1973-05-28
FR1595220A (xx) 1970-06-08
DE1769605A1 (de) 1971-07-01
US3653991A (en) 1972-04-04
AT306794B (de) 1973-04-25
CH499879A (de) 1970-11-30
AT308828B (de) 1973-07-25
GB1229128A (xx) 1971-04-21

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