NL6513397A - - Google Patents
Info
- Publication number
- NL6513397A NL6513397A NL6513397A NL6513397A NL6513397A NL 6513397 A NL6513397 A NL 6513397A NL 6513397 A NL6513397 A NL 6513397A NL 6513397 A NL6513397 A NL 6513397A NL 6513397 A NL6513397 A NL 6513397A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
- H05B3/64—Heating elements specially adapted for furnaces using ribbon, rod, or wire heater
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0093998 | 1964-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6513397A true NL6513397A (xx) | 1966-05-03 |
Family
ID=56291915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6513397A NL6513397A (xx) | 1964-11-02 | 1965-10-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3471326A (xx) |
| CH (1) | CH428677A (xx) |
| GB (1) | GB1119050A (xx) |
| NL (1) | NL6513397A (xx) |
| SE (1) | SE325557B (xx) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1769605A1 (de) * | 1968-06-14 | 1971-07-01 | Siemens Ag | Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente |
| US3710757A (en) * | 1970-12-09 | 1973-01-16 | Texas Instruments Inc | Continuous deposition system |
| US4108106A (en) * | 1975-12-29 | 1978-08-22 | Tylan Corporation | Cross-flow reactor |
| FR2373403A1 (fr) * | 1976-12-10 | 1978-07-07 | Fukamizu Tadashi | Systeme decoratif a film de fluide |
| JPS5670830A (en) * | 1979-11-10 | 1981-06-13 | Toshiba Corp | Vapor growth method |
| US4309240A (en) * | 1980-05-16 | 1982-01-05 | Advanced Crystal Sciences, Inc. | Process for chemical vapor deposition of films on silicon wafers |
| US4535228A (en) * | 1982-12-28 | 1985-08-13 | Ushio Denki Kabushiki Kaisha | Heater assembly and a heat-treatment method of semiconductor wafer using the same |
| US4504730A (en) * | 1983-10-04 | 1985-03-12 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
| US4535227A (en) * | 1983-10-04 | 1985-08-13 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
| FI72378C (fi) * | 1985-09-09 | 1987-05-11 | Urpo Mantovaara | Kilremskiva och -vaexel. |
| JPH0834187B2 (ja) * | 1989-01-13 | 1996-03-29 | 東芝セラミックス株式会社 | サセプタ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL122356C (xx) * | 1954-05-18 | 1900-01-01 | ||
| US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
| US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
| US3329527A (en) * | 1963-09-13 | 1967-07-04 | Monsanto Co | Graphite heating elements and method of conditioning the heating surfaces thereof |
-
1965
- 1965-10-15 NL NL6513397A patent/NL6513397A/xx unknown
- 1965-10-29 CH CH1497665A patent/CH428677A/de unknown
- 1965-11-01 US US505780A patent/US3471326A/en not_active Expired - Lifetime
- 1965-11-01 GB GB46110/65A patent/GB1119050A/en not_active Expired
- 1965-11-02 SE SE14142/65A patent/SE325557B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE325557B (xx) | 1970-07-06 |
| CH428677A (de) | 1967-01-31 |
| US3471326A (en) | 1969-10-07 |
| GB1119050A (en) | 1968-07-03 |