SE325557B - - Google Patents

Info

Publication number
SE325557B
SE325557B SE14142/65A SE1414265A SE325557B SE 325557 B SE325557 B SE 325557B SE 14142/65 A SE14142/65 A SE 14142/65A SE 1414265 A SE1414265 A SE 1414265A SE 325557 B SE325557 B SE 325557B
Authority
SE
Sweden
Application number
SE14142/65A
Inventor
Rudolf Kappelmeyer
Kurt Schluter
Hermann Steggewentz
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE325557B publication Critical patent/SE325557B/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/62Heating elements specially adapted for furnaces
    • H05B3/64Heating elements specially adapted for furnaces using ribbon, rod, or wire heater

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE14142/65A 1964-11-02 1965-11-02 SE325557B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0093998 1964-11-02

Publications (1)

Publication Number Publication Date
SE325557B true SE325557B (xx) 1970-07-06

Family

ID=56291915

Family Applications (1)

Application Number Title Priority Date Filing Date
SE14142/65A SE325557B (xx) 1964-11-02 1965-11-02

Country Status (5)

Country Link
US (1) US3471326A (xx)
CH (1) CH428677A (xx)
GB (1) GB1119050A (xx)
NL (1) NL6513397A (xx)
SE (1) SE325557B (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1769605A1 (de) * 1968-06-14 1971-07-01 Siemens Ag Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente
US3710757A (en) * 1970-12-09 1973-01-16 Texas Instruments Inc Continuous deposition system
US4108106A (en) * 1975-12-29 1978-08-22 Tylan Corporation Cross-flow reactor
FR2373403A1 (fr) * 1976-12-10 1978-07-07 Fukamizu Tadashi Systeme decoratif a film de fluide
JPS5670830A (en) * 1979-11-10 1981-06-13 Toshiba Corp Vapor growth method
US4309240A (en) * 1980-05-16 1982-01-05 Advanced Crystal Sciences, Inc. Process for chemical vapor deposition of films on silicon wafers
US4535228A (en) * 1982-12-28 1985-08-13 Ushio Denki Kabushiki Kaisha Heater assembly and a heat-treatment method of semiconductor wafer using the same
US4535227A (en) * 1983-10-04 1985-08-13 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
US4504730A (en) * 1983-10-04 1985-03-12 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light
FI72378C (fi) * 1985-09-09 1987-05-11 Urpo Mantovaara Kilremskiva och -vaexel.
JPH0834187B2 (ja) * 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL258754A (xx) * 1954-05-18 1900-01-01
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
US3220380A (en) * 1961-08-21 1965-11-30 Merck & Co Inc Deposition chamber including heater element enveloped by a quartz workholder
US3329527A (en) * 1963-09-13 1967-07-04 Monsanto Co Graphite heating elements and method of conditioning the heating surfaces thereof

Also Published As

Publication number Publication date
GB1119050A (en) 1968-07-03
US3471326A (en) 1969-10-07
NL6513397A (xx) 1966-05-03
CH428677A (de) 1967-01-31

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