GB1228754A - - Google Patents
Info
- Publication number
- GB1228754A GB1228754A GB1228754DA GB1228754A GB 1228754 A GB1228754 A GB 1228754A GB 1228754D A GB1228754D A GB 1228754DA GB 1228754 A GB1228754 A GB 1228754A
- Authority
- GB
- United Kingdom
- Prior art keywords
- implantation
- ions
- mask
- region
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002513 implantation Methods 0.000 abstract 6
- 150000002500 ions Chemical class 0.000 abstract 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- 239000004411 aluminium Substances 0.000 abstract 5
- -1 Boron ions Chemical class 0.000 abstract 4
- 238000005468 ion implantation Methods 0.000 abstract 4
- 229910052698 phosphorus Inorganic materials 0.000 abstract 4
- 239000011574 phosphorus Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 238000000137 annealing Methods 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000005465 channeling Effects 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000010849 ion bombardment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/93—Variable capacitance diodes, e.g. varactors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2476267 | 1967-05-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1228754A true GB1228754A (fr) | 1971-04-21 |
Family
ID=10216859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1228754D Expired GB1228754A (fr) | 1967-05-26 | 1967-05-26 |
Country Status (6)
| Country | Link |
|---|---|
| CH (1) | CH474158A (fr) |
| DE (1) | DE1764372C3 (fr) |
| FR (1) | FR1573306A (fr) |
| GB (1) | GB1228754A (fr) |
| NL (1) | NL151558B (fr) |
| SE (1) | SE352196B (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1263009A (en) * | 1969-03-31 | 1972-02-09 | Tokyo Shibaura Electric Co | A method for manufacturing a semiconductor device and such device prepared thereby |
| GB1332932A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| FR2096876B1 (fr) * | 1970-07-09 | 1973-08-10 | Thomson Csf | |
| NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
| GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
-
1967
- 1967-05-26 GB GB1228754D patent/GB1228754A/en not_active Expired
-
1968
- 1968-05-22 SE SE698168A patent/SE352196B/xx unknown
- 1968-05-27 CH CH785568A patent/CH474158A/de not_active IP Right Cessation
- 1968-05-27 DE DE19681764372 patent/DE1764372C3/de not_active Expired
- 1968-05-27 FR FR1573306D patent/FR1573306A/fr not_active Expired
- 1968-05-27 NL NL6807438A patent/NL151558B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR1573306A (fr) | 1969-07-04 |
| DE1764372B2 (de) | 1974-06-12 |
| NL6807438A (fr) | 1968-11-27 |
| SE352196B (fr) | 1972-12-18 |
| NL151558B (nl) | 1976-11-15 |
| DE1764372A1 (de) | 1972-04-20 |
| CH474158A (de) | 1969-06-15 |
| DE1764372C3 (de) | 1975-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |