GB1225399A - - Google Patents
Info
- Publication number
- GB1225399A GB1225399A GB1225399DA GB1225399A GB 1225399 A GB1225399 A GB 1225399A GB 1225399D A GB1225399D A GB 1225399DA GB 1225399 A GB1225399 A GB 1225399A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- contacts
- regions
- tantalum
- oct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052715 tantalum Inorganic materials 0.000 abstract 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67368367A | 1967-10-09 | 1967-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1225399A true GB1225399A (enrdf_load_stackoverflow) | 1971-03-17 |
Family
ID=24703681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1225399D Expired GB1225399A (enrdf_load_stackoverflow) | 1967-10-09 | 1968-10-09 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1801882A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1572934A (enrdf_load_stackoverflow) |
| GB (1) | GB1225399A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0899645A3 (en) * | 1997-09-01 | 2002-07-03 | Nokia Corporation | Field effect transistors |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IE33320B1 (en) * | 1968-10-10 | 1974-05-15 | Gen Electric | Voltage- controllable capacitor |
| JPS5124341B2 (enrdf_load_stackoverflow) * | 1971-12-24 | 1976-07-23 | ||
| DE2250613A1 (de) * | 1972-10-16 | 1974-04-25 | Itt Ind Gmbh Deutsche | Isolierschicht-feldeffekttransistor |
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| FR2527867A1 (fr) * | 1982-05-28 | 1983-12-02 | Mingam Herve | Circuit analogique inverseur a transistor a effet de champ |
-
1968
- 1968-07-25 FR FR1572934D patent/FR1572934A/fr not_active Expired
- 1968-10-08 DE DE19681801882 patent/DE1801882A1/de active Pending
- 1968-10-09 GB GB1225399D patent/GB1225399A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0899645A3 (en) * | 1997-09-01 | 2002-07-03 | Nokia Corporation | Field effect transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1572934A (enrdf_load_stackoverflow) | 1969-06-27 |
| DE1801882A1 (de) | 1969-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLE | Entries relating assignments, transmissions, licences in the register of patents | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |