IE33320B1 - Voltage- controllable capacitor - Google Patents
Voltage- controllable capacitorInfo
- Publication number
- IE33320B1 IE33320B1 IE130069A IE130069A IE33320B1 IE 33320 B1 IE33320 B1 IE 33320B1 IE 130069 A IE130069 A IE 130069A IE 130069 A IE130069 A IE 130069A IE 33320 B1 IE33320 B1 IE 33320B1
- Authority
- IE
- Ireland
- Prior art keywords
- electrode
- junction
- layer
- insulation
- voltage
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 238000009413 insulation Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1283383 Semi-conductor devices GENERAL ELECTRIC CO 26 Sept 1969 [10 Oct 1968] 47576/69 Heading H1K The capacitance associated with PN-junction 20, 24 is greatly increased by the formation of an inversion region of controllable extent under capacitative electrode 17, 15A. Electrode layer 17 (with terminals 11/33 and 12/34) is resistive so that an increasing control potential applied to the electrode (12) nearest the PN junction leads to the formation of an inversion layer extending increasingly from the junction. A less-thaninverting voltage obtained from potentiometer 31 at the other end of this layer determines the value of the voltage at the junction end of the electrode at which inversion first occurs. That part only of electrode 17 is effective which lies on the thinner part 15A of the insulation 15. The shape of the control voltage-capacitance characteristic may therefore be tailored by suitably shaping the thinner area of insulation or by providing a shaped electrode 17 on part only of the thinner area (see Figs. 10 and 11, not shown). In embodiments the semi-conductor body is of silicon; the insulator layer 15, 15A is of silicon dioxide; the terminals 11, 12 are of molybdenum; the resistive layer 17 is of chromium nitride or of amorphous silicon; protective insulation 21 for the resistive layer is of silicon nitride; overlying insulation 18 is of phosphosilicate or borosilicate glass if the diffused zone 20 is formed near the end of the manufacture or is of undoped material if the junction is formed near the beginning of the manufacture; and terminal layers 25, (26), and 27 are of aluminium. The capacitor may be an individual device or may form part of an integrated circuit such as one containing IGFETs formed during common processing steps.
[GB1283383A]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76654668A | 1968-10-10 | 1968-10-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE33320L IE33320L (en) | 1970-04-10 |
| IE33320B1 true IE33320B1 (en) | 1974-05-15 |
Family
ID=25076769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE130069A IE33320B1 (en) | 1968-10-10 | 1969-09-16 | Voltage- controllable capacitor |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE740058A (en) |
| DE (1) | DE1951242A1 (en) |
| FR (1) | FR2020336B1 (en) |
| GB (1) | GB1283383A (en) |
| IE (1) | IE33320B1 (en) |
| SE (1) | SE343426B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120175A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural super-capacitance variable electrode structures |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3391282A (en) * | 1965-02-19 | 1968-07-02 | Fairchild Camera Instr Co | Variable length photodiode using an inversion plate |
| FR1535286A (en) * | 1966-09-26 | 1968-08-02 | Gen Micro Electronics | Field effect metal oxide semiconductor transistor and method of manufacturing same |
| FR1572934A (en) * | 1967-10-09 | 1969-06-27 |
-
1969
- 1969-09-16 IE IE130069A patent/IE33320B1/en unknown
- 1969-09-26 GB GB4757669A patent/GB1283383A/en not_active Expired
- 1969-10-09 SE SE1388569A patent/SE343426B/xx unknown
- 1969-10-09 BE BE740058D patent/BE740058A/xx unknown
- 1969-10-10 DE DE19691951242 patent/DE1951242A1/en active Pending
- 1969-10-10 FR FR6934705A patent/FR2020336B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IE33320L (en) | 1970-04-10 |
| SE343426B (en) | 1972-03-06 |
| FR2020336B1 (en) | 1974-02-01 |
| GB1283383A (en) | 1972-07-26 |
| DE1951242A1 (en) | 1970-05-27 |
| FR2020336A1 (en) | 1970-07-10 |
| BE740058A (en) | 1970-04-09 |
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