GB1212748A - Method of manufacturing silicon carbide crystals - Google Patents

Method of manufacturing silicon carbide crystals

Info

Publication number
GB1212748A
GB1212748A GB55550/68A GB5555068A GB1212748A GB 1212748 A GB1212748 A GB 1212748A GB 55550/68 A GB55550/68 A GB 55550/68A GB 5555068 A GB5555068 A GB 5555068A GB 1212748 A GB1212748 A GB 1212748A
Authority
GB
United Kingdom
Prior art keywords
silicon carbide
sand
crystals
core
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB55550/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1212748A publication Critical patent/GB1212748A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B66—HOISTING; LIFTING; HAULING
    • B66C—CRANES; LOAD-ENGAGING ELEMENTS OR DEVICES FOR CRANES, CAPSTANS, WINCHES, OR TACKLES
    • B66C23/00—Cranes comprising essentially a beam, boom, or triangular structure acting as a cantilever and mounted for translatory of swinging movements in vertical or horizontal planes or a combination of such movements, e.g. jib-cranes, derricks, tower cranes
    • B66C23/62—Constructional features or details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B66—HOISTING; LIFTING; HAULING
    • B66F—HOISTING, LIFTING, HAULING OR PUSHING, NOT OTHERWISE PROVIDED FOR, e.g. DEVICES WHICH APPLY A LIFTING OR PUSHING FORCE DIRECTLY TO THE SURFACE OF A LOAD
    • B66F3/00—Devices, e.g. jacks, adapted for uninterrupted lifting of loads
    • B66F3/22—Lazy-tongs mechanisms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/97—Preparation from SiO or SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Structural Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,212,748. Silicon carbide. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 22 Nov., 1968 [25 Nov., 1967], No. 55550/68. Heading C1A. Silicon carbide crystals are prepared by heating granular silicon carbide, which may be formed in situ, provided with a core of silicon dioxide, either pure or in the form of sand or clay, at a temperature, e.g. 2000‹ to 2600‹ C., at which the core of silicon dioxide volatilizes, the silicon carbide coheres and crystals thereof form on the inner surfaces of the cavity so produced. In order to obtain the cavities of large dimensions which have to be formed in carrying out the crystallization in an Acheson furnace for example, cores may be formed locally by depositing sand 5 during the construction from a mixture 2 of sand with carbon or products supplying carbon upon heating. During the heating, e.g. by means of a carbonrod shaped electric heater element 3, the paper moulds 4 burn or char and the sand 5 of the cores volatilizes so that the surrounding silicon carbide coheres and caving in of the cavity, which is formed by complete volatilization of the sand core, is prevented. Generally, plateshaped silicon carbide crystals are formed, but if the crystallization is carried out in the presence of a Group IIIA element, particularly lanthanum, filamentary crystals or " whiskers " may be obtained.
GB55550/68A 1967-11-25 1968-11-22 Method of manufacturing silicon carbide crystals Expired GB1212748A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL676716070A NL155197B (en) 1967-11-25 1967-11-25 PROCESS FOR THE MANUFACTURE OF SILICON CARBIDE CRYSTALS AS WELL AS SILICON CARBIDE CRYSTALS OBTAINED BY USING THIS PROCESS.

Publications (1)

Publication Number Publication Date
GB1212748A true GB1212748A (en) 1970-11-18

Family

ID=19801820

Family Applications (1)

Application Number Title Priority Date Filing Date
GB55550/68A Expired GB1212748A (en) 1967-11-25 1968-11-22 Method of manufacturing silicon carbide crystals

Country Status (12)

Country Link
JP (1) JPS5017958B1 (en)
AT (1) AT294010B (en)
BR (1) BR6804297D0 (en)
CH (1) CH530936A (en)
DE (1) DE1810504C3 (en)
DK (1) DK123290B (en)
ES (1) ES360606A1 (en)
FR (1) FR1594861A (en)
GB (1) GB1212748A (en)
NL (1) NL155197B (en)
NO (1) NO123882B (en)
SE (1) SE345119B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3962406A (en) * 1967-11-25 1976-06-08 U.S. Philips Corporation Method of manufacturing silicon carbide crystals

Also Published As

Publication number Publication date
FR1594861A (en) 1970-06-08
ES360606A1 (en) 1970-07-16
NO123882B (en) 1972-01-31
NL6716070A (en) 1969-05-28
AT294010B (en) 1971-11-10
SE345119B (en) 1972-05-15
JPS5017958B1 (en) 1975-06-25
BR6804297D0 (en) 1973-01-16
CH530936A (en) 1972-11-30
DE1810504A1 (en) 1969-07-10
NL155197B (en) 1977-12-15
DE1810504B2 (en) 1974-04-25
DE1810504C3 (en) 1974-12-05
DK123290B (en) 1972-06-05

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee