GB797205A - Method of producing small semi-conductor single crystals - Google Patents

Method of producing small semi-conductor single crystals

Info

Publication number
GB797205A
GB797205A GB24847/54A GB2484754A GB797205A GB 797205 A GB797205 A GB 797205A GB 24847/54 A GB24847/54 A GB 24847/54A GB 2484754 A GB2484754 A GB 2484754A GB 797205 A GB797205 A GB 797205A
Authority
GB
United Kingdom
Prior art keywords
slab
semi
moulds
cavities
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24847/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CLEVEITE CORP
Original Assignee
CLEVEITE CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CLEVEITE CORP filed Critical CLEVEITE CORP
Publication of GB797205A publication Critical patent/GB797205A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Single crystals suitable for semi-conductor diodes or transistors are produced by heating semi-conductor material in a shallow mould, cooling so as to form a single crystal slab thin enough for transistor or diode use, and then dividing the slab into individual crystals. Fig. 1 <PICT:0797205/III/1> <PICT:0797205/III/2> shows a quartz tube 12 containing a stack of moulds, such as shown in Fig. 2 having shallow cavities 10 and projections 11 which exert pressure on molten material in the cavities of the underlying mould. The moulds may be made of graphite or quartz with a carbon black coating. Powdered unpurified semi-conductor material such as Ge, Si or Ge-Si alloy is placed in the cavities, the moulds stacked and the entire assembly heated in a non-reactive circulating atmosphere such as H, N, He or A, so that the mould sections move down to compress the material. This is followed by a zone refining process and subsequent doping with antimony, which is effected by induction heating coil 17 associated with rotary screw 19. After heating, the assembly is slowly cooled to form a single crystal consisting of a 0.025 inch thick slab in each cavity. Each slab is then scored across one of its major faces so that individual single crystals may be provided, each of suitable size for transistor or diode use. If desired the slabs may be scored in two directions, where the width of the slab exceeds the desired width of a single transistor crystal.
GB24847/54A 1953-09-22 1954-08-26 Method of producing small semi-conductor single crystals Expired GB797205A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US797205XA 1953-09-22 1953-09-22

Publications (1)

Publication Number Publication Date
GB797205A true GB797205A (en) 1958-06-25

Family

ID=22152365

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24847/54A Expired GB797205A (en) 1953-09-22 1954-08-26 Method of producing small semi-conductor single crystals

Country Status (1)

Country Link
GB (1) GB797205A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3026188A (en) * 1960-04-11 1962-03-20 Clevite Corp Method and apparatus for growing single crystals
DE3322175C1 (en) * 1983-06-21 1984-05-24 Dornier System Gmbh, 7990 Friedrichshafen Device for the directional solidification of molten material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3026188A (en) * 1960-04-11 1962-03-20 Clevite Corp Method and apparatus for growing single crystals
DE3322175C1 (en) * 1983-06-21 1984-05-24 Dornier System Gmbh, 7990 Friedrichshafen Device for the directional solidification of molten material

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