GB1202572A - Methods of and apparatus for generating reactive gas plasmas - Google Patents

Methods of and apparatus for generating reactive gas plasmas

Info

Publication number
GB1202572A
GB1202572A GB37929/67A GB3792967A GB1202572A GB 1202572 A GB1202572 A GB 1202572A GB 37929/67 A GB37929/67 A GB 37929/67A GB 3792967 A GB3792967 A GB 3792967A GB 1202572 A GB1202572 A GB 1202572A
Authority
GB
United Kingdom
Prior art keywords
gas
plasma
substrate
reactive gas
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37929/67A
Inventor
Alex Androshuk
William Charles Erdman
Arpad Albert Bergh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1202572A publication Critical patent/GB1202572A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/906—Plasma or ion generation means

Abstract

1,202,572. Reactive gas plasmas. WESTERN ELECTRIC CO. Inc. 17 Aug., 1967 [1 Sept., 1966; 28 April, 1967], No. 37929/67. Heading CIA. [Also in Divisions C7 and H5] A reactive gas plasma for treating an article is sustained between two spaced electrodes by feeding a reactant gas into the zone between the electrodes containing the article and flowing a protective gas around at least the cathode, the flow rates of the gases being adjusted so that a static interface exists between the reactant gas and the protective gas. In the example, Si 3 N 4 is deposited on a Si substrate from a mixture of N 2 and 0À01-1% SiBr 4 at 0À1-10 Torr and 300-800‹ C. Reaction zone 10 contains substrate 14 mounted on R.F. heated pedestal 13. Electrode chambers 11 and 12 contain anode 16 and cathode 17 and are fed with protective gas, e.g. Ar, He, N 2 , CO 2 , or air, through ports 18 and 19. The reactant gas is fed in at 20 and the plasma extends between exhaust ports 21 and 22. A magnet may be used to deflect the plasma on to the substrate.
GB37929/67A 1966-09-01 1967-08-17 Methods of and apparatus for generating reactive gas plasmas Expired GB1202572A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57945266A 1966-09-01 1966-09-01
US64109567A 1967-04-28 1967-04-28

Publications (1)

Publication Number Publication Date
GB1202572A true GB1202572A (en) 1970-08-19

Family

ID=27077766

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37929/67A Expired GB1202572A (en) 1966-09-01 1967-08-17 Methods of and apparatus for generating reactive gas plasmas

Country Status (12)

Country Link
US (1) US3484358A (en)
BE (1) BE700937A (en)
BR (1) BR6792541D0 (en)
CH (1) CH468769A (en)
DE (1) DE1639042B2 (en)
ES (1) ES344947A1 (en)
GB (1) GB1202572A (en)
IL (1) IL28232A (en)
MY (1) MY7100087A (en)
NL (1) NL142016B (en)
NO (1) NO123048B (en)
SE (1) SE317237B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664895A (en) * 1969-06-13 1972-05-23 Gen Electric Method of forming a camera tube diode array target by masking and diffusion
FR2129996B1 (en) * 1971-03-25 1975-01-17 Centre Nat Etd Spatiales
US4579609A (en) * 1984-06-08 1986-04-01 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
US4961832A (en) * 1989-03-14 1990-10-09 Shagun Vladimir A Apparatus for applying film coatings onto substrates in vacuum

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE582893A (en) * 1958-09-25 1900-01-01
GB915771A (en) * 1959-01-12 1963-01-16 Ici Ltd Method of conducting gaseous chemical reactions
US3294669A (en) * 1963-07-22 1966-12-27 Bell Telephone Labor Inc Apparatus for sputtering in a highly purified gas atmosphere
US3390980A (en) * 1964-01-20 1968-07-02 Mhd Res Inc Method of producing beryllium halides from beryllium ore in a high intensity ore

Also Published As

Publication number Publication date
NO123048B (en) 1971-09-20
MY7100087A (en) 1971-12-31
BE700937A (en) 1967-12-18
NL142016B (en) 1974-04-16
US3484358A (en) 1969-12-16
BR6792541D0 (en) 1973-06-26
DE1639042B2 (en) 1971-05-19
CH468769A (en) 1969-02-15
IL28232A (en) 1970-10-30
SE317237B (en) 1969-11-10
NL6710208A (en) 1968-03-04
ES344947A1 (en) 1968-11-01
DE1639042A1 (en) 1970-02-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees