GB1170705A - An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same - Google Patents

An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same

Info

Publication number
GB1170705A
GB1170705A GB8030/68A GB803068A GB1170705A GB 1170705 A GB1170705 A GB 1170705A GB 8030/68 A GB8030/68 A GB 8030/68A GB 803068 A GB803068 A GB 803068A GB 1170705 A GB1170705 A GB 1170705A
Authority
GB
United Kingdom
Prior art keywords
diode
source
region
type
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8030/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1170705A publication Critical patent/GB1170705A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB8030/68A 1967-02-27 1968-02-19 An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same Expired GB1170705A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1208667 1967-02-27

Publications (1)

Publication Number Publication Date
GB1170705A true GB1170705A (en) 1969-11-12

Family

ID=11795757

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8030/68A Expired GB1170705A (en) 1967-02-27 1968-02-19 An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same

Country Status (5)

Country Link
US (1) US3754171A (enExample)
DE (1) DE1639254B2 (enExample)
FR (1) FR1563109A (enExample)
GB (1) GB1170705A (enExample)
NL (1) NL6802684A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748547A (en) * 1970-06-24 1973-07-24 Nippon Electric Co Insulated-gate field effect transistor having gate protection diode
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
US4742015A (en) * 1984-03-07 1988-05-03 Telefunken Electronic Gmbh Method for producing a protective arrangement for a field-effect transistor
GB2263017A (en) * 1992-01-06 1993-07-07 Fuji Electric Co Ltd Semiconductor device including overvoltage protective circuit

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836598B1 (enExample) * 1969-09-05 1973-11-06
JPS5126772B1 (enExample) * 1969-09-29 1976-08-09
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5321838B2 (enExample) * 1973-02-28 1978-07-05
FR2319267A1 (fr) * 1973-07-03 1977-02-18 Radiotechnique Compelec Dispositif electroluminescent a seuil
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4102714A (en) * 1976-04-23 1978-07-25 International Business Machines Corporation Process for fabricating a low breakdown voltage device for polysilicon gate technology
US4092619A (en) * 1976-12-27 1978-05-30 Intel Corporation Mos voltage controlled lowpass filter
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
US4523189A (en) * 1981-05-25 1985-06-11 Fujitsu Limited El display device
US4406997A (en) * 1981-09-30 1983-09-27 International Business Machines Corporation Method and means for minimizing the effect of short circuits in flat panel displays
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
US20060044716A1 (en) * 2004-08-31 2006-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit with improved trigger-on voltage
US9356144B1 (en) * 2009-08-11 2016-05-31 Rf Micro Devices, Inc. Remote gate protection diode for field effect transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390314A (en) * 1964-10-30 1968-06-25 Rca Corp Semiconductor translating circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
US3748547A (en) * 1970-06-24 1973-07-24 Nippon Electric Co Insulated-gate field effect transistor having gate protection diode
US4742015A (en) * 1984-03-07 1988-05-03 Telefunken Electronic Gmbh Method for producing a protective arrangement for a field-effect transistor
GB2263017A (en) * 1992-01-06 1993-07-07 Fuji Electric Co Ltd Semiconductor device including overvoltage protective circuit
US5304802A (en) * 1992-01-06 1994-04-19 Fuji Electric Co., Ltd. Semiconductor device including overvoltage protective circuit
GB2263017B (en) * 1992-01-06 1995-10-04 Fuji Electric Co Ltd Semiconductor device including overvoltage protective circuit

Also Published As

Publication number Publication date
FR1563109A (enExample) 1969-04-11
DE1639254A1 (de) 1970-07-09
NL6802684A (enExample) 1968-08-28
DE1639254B2 (de) 1972-03-30
US3754171A (en) 1973-08-21

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