NL6802684A - - Google Patents

Info

Publication number
NL6802684A
NL6802684A NL6802684A NL6802684A NL6802684A NL 6802684 A NL6802684 A NL 6802684A NL 6802684 A NL6802684 A NL 6802684A NL 6802684 A NL6802684 A NL 6802684A NL 6802684 A NL6802684 A NL 6802684A
Authority
NL
Netherlands
Application number
NL6802684A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6802684A publication Critical patent/NL6802684A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
NL6802684A 1967-02-27 1968-02-26 NL6802684A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1208667 1967-02-27

Publications (1)

Publication Number Publication Date
NL6802684A true NL6802684A (xx) 1968-08-28

Family

ID=11795757

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6802684A NL6802684A (xx) 1967-02-27 1968-02-26

Country Status (5)

Country Link
US (1) US3754171A (xx)
DE (1) DE1639254B2 (xx)
FR (1) FR1563109A (xx)
GB (1) GB1170705A (xx)
NL (1) NL6802684A (xx)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
US4011581A (en) * 1969-09-05 1977-03-08 Hitachi, Ltd. MOSFET antiparasitic layer

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
JPS5126772B1 (xx) * 1969-09-29 1976-08-09
JPS5122794B1 (xx) * 1970-06-24 1976-07-12
JPS5321838B2 (xx) * 1973-02-28 1978-07-05
FR2319267A1 (fr) * 1973-07-03 1977-02-18 Radiotechnique Compelec Dispositif electroluminescent a seuil
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4102714A (en) * 1976-04-23 1978-07-25 International Business Machines Corporation Process for fabricating a low breakdown voltage device for polysilicon gate technology
US4092619A (en) * 1976-12-27 1978-05-30 Intel Corporation Mos voltage controlled lowpass filter
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
US4523189A (en) * 1981-05-25 1985-06-11 Fujitsu Limited El display device
US4406997A (en) * 1981-09-30 1983-09-27 International Business Machines Corporation Method and means for minimizing the effect of short circuits in flat panel displays
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
DE3408285A1 (de) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn Schutzanordnung fuer einen feldeffekttransistor
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
US20060044716A1 (en) * 2004-08-31 2006-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit with improved trigger-on voltage
US9356144B1 (en) * 2009-08-11 2016-05-31 Rf Micro Devices, Inc. Remote gate protection diode for field effect transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390314A (en) * 1964-10-30 1968-06-25 Rca Corp Semiconductor translating circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011581A (en) * 1969-09-05 1977-03-08 Hitachi, Ltd. MOSFET antiparasitic layer
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device

Also Published As

Publication number Publication date
DE1639254A1 (de) 1970-07-09
US3754171A (en) 1973-08-21
FR1563109A (xx) 1969-04-11
GB1170705A (en) 1969-11-12
DE1639254B2 (de) 1972-03-30

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