FR1563109A - - Google Patents

Info

Publication number
FR1563109A
FR1563109A FR1563109DA FR1563109A FR 1563109 A FR1563109 A FR 1563109A FR 1563109D A FR1563109D A FR 1563109DA FR 1563109 A FR1563109 A FR 1563109A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1563109A publication Critical patent/FR1563109A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
FR1563109D 1967-02-27 1968-02-26 Expired FR1563109A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1208667 1967-02-27

Publications (1)

Publication Number Publication Date
FR1563109A true FR1563109A (fr) 1969-04-11

Family

ID=11795757

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1563109D Expired FR1563109A (fr) 1967-02-27 1968-02-26

Country Status (5)

Country Link
US (1) US3754171A (fr)
DE (1) DE1639254B2 (fr)
FR (1) FR1563109A (fr)
GB (1) GB1170705A (fr)
NL (1) NL6802684A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2063062A1 (fr) * 1969-09-29 1971-07-02 Sony Corp
FR2106614A1 (fr) * 1970-09-18 1972-05-05 Rca Corp
JPS5122794B1 (fr) * 1970-06-24 1976-07-12

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
JPS4836598B1 (fr) * 1969-09-05 1973-11-06
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
JPS5321838B2 (fr) * 1973-02-28 1978-07-05
FR2319267A1 (fr) * 1973-07-03 1977-02-18 Radiotechnique Compelec Dispositif electroluminescent a seuil
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
US4102714A (en) * 1976-04-23 1978-07-25 International Business Machines Corporation Process for fabricating a low breakdown voltage device for polysilicon gate technology
US4092619A (en) * 1976-12-27 1978-05-30 Intel Corporation Mos voltage controlled lowpass filter
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
JPS57130476A (en) * 1981-02-05 1982-08-12 Sony Corp Semiconductor device
US4523189A (en) * 1981-05-25 1985-06-11 Fujitsu Limited El display device
US4406997A (en) * 1981-09-30 1983-09-27 International Business Machines Corporation Method and means for minimizing the effect of short circuits in flat panel displays
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
DE3408285A1 (de) * 1984-03-07 1985-09-19 Telefunken electronic GmbH, 7100 Heilbronn Schutzanordnung fuer einen feldeffekttransistor
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
US20060044716A1 (en) * 2004-08-31 2006-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit with improved trigger-on voltage
US9356144B1 (en) * 2009-08-11 2016-05-31 Rf Micro Devices, Inc. Remote gate protection diode for field effect transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390314A (en) * 1964-10-30 1968-06-25 Rca Corp Semiconductor translating circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2063062A1 (fr) * 1969-09-29 1971-07-02 Sony Corp
JPS5122794B1 (fr) * 1970-06-24 1976-07-12
FR2106614A1 (fr) * 1970-09-18 1972-05-05 Rca Corp

Also Published As

Publication number Publication date
GB1170705A (en) 1969-11-12
NL6802684A (fr) 1968-08-28
DE1639254B2 (de) 1972-03-30
US3754171A (en) 1973-08-21
DE1639254A1 (de) 1970-07-09

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Legal Events

Date Code Title Description
ST Notification of lapse