GB1124330A - Improvements in or relating to the epitaxial deposition of crystalline layers - Google Patents

Improvements in or relating to the epitaxial deposition of crystalline layers

Info

Publication number
GB1124330A
GB1124330A GB4162/66A GB416266A GB1124330A GB 1124330 A GB1124330 A GB 1124330A GB 4162/66 A GB4162/66 A GB 4162/66A GB 416266 A GB416266 A GB 416266A GB 1124330 A GB1124330 A GB 1124330A
Authority
GB
United Kingdom
Prior art keywords
gas
entry point
path
centre
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4162/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1124330A publication Critical patent/GB1124330A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB4162/66A 1965-01-29 1966-01-31 Improvements in or relating to the epitaxial deposition of crystalline layers Expired GB1124330A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95244A DE1297086B (de) 1965-01-29 1965-01-29 Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial

Publications (1)

Publication Number Publication Date
GB1124330A true GB1124330A (en) 1968-08-21

Family

ID=7519237

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4162/66A Expired GB1124330A (en) 1965-01-29 1966-01-31 Improvements in or relating to the epitaxial deposition of crystalline layers

Country Status (7)

Country Link
US (1) US3472684A (en:Method)
AT (1) AT256940B (en:Method)
CH (1) CH457374A (en:Method)
DE (1) DE1297086B (en:Method)
GB (1) GB1124330A (en:Method)
NL (1) NL6517274A (en:Method)
SE (1) SE319460B (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573325A1 (fr) * 1984-11-16 1986-05-23 Sony Corp Appareil et procede pour faire des depots de vapeur sur des plaquettes
US5414927A (en) * 1993-03-30 1995-05-16 Union Oil Co Furnace elements made from graphite sheets

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635683A (en) * 1968-06-05 1972-01-18 Texas Instruments Inc Method of crystal growth by vapor deposition
US3696779A (en) * 1969-12-29 1972-10-10 Kokusai Electric Co Ltd Vapor growth device
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
WO1999043874A1 (en) * 1998-02-24 1999-09-02 Northrop Grumman Corporation Ceiling arrangement for an epitaxial growth reactor
KR100319891B1 (ko) * 1999-06-29 2002-01-10 윤종용 웨이퍼용 열처리 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631948A (en) * 1949-05-23 1953-03-17 Ohio Commw Eng Co Method and apparatus for gas plating
US2887088A (en) * 1954-08-16 1959-05-19 Ohio Commw Eng Co Apparatus for gaseous metal plating fibers
NL124690C (en:Method) * 1958-05-29
NL256255A (en:Method) * 1959-11-02
NL271345A (en:Method) * 1960-11-30
NL270518A (en:Method) * 1960-11-30
US3233578A (en) * 1962-04-23 1966-02-08 Capita Emil Robert Apparatus for vapor plating
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573325A1 (fr) * 1984-11-16 1986-05-23 Sony Corp Appareil et procede pour faire des depots de vapeur sur des plaquettes
US5414927A (en) * 1993-03-30 1995-05-16 Union Oil Co Furnace elements made from graphite sheets
US5912080A (en) * 1993-03-30 1999-06-15 Union Oil Company Of California, Dba Unocal Shaped graphite elements fabricated from thin graphite sheets
US6083625A (en) * 1993-03-30 2000-07-04 Union Oil Company Of California Curved graphite furnace elements

Also Published As

Publication number Publication date
SE319460B (en:Method) 1970-01-19
DE1297086B (de) 1969-06-12
NL6517274A (en:Method) 1966-08-01
CH457374A (de) 1968-06-15
US3472684A (en) 1969-10-14
AT256940B (de) 1967-09-11

Similar Documents

Publication Publication Date Title
GB1124330A (en) Improvements in or relating to the epitaxial deposition of crystalline layers
ES386190A1 (es) Un aparato y un metodo para efectuar transportes de vaporesentre un material en fase gaseosa y una superficie de sus- trato esencialmente plana.
Dexter et al. Effective masses of holes in silicon
GB995523A (en) Magneto-hydro-dynamic generator with cooled duct walls
GB1230051A (en:Method)
ES391740A1 (es) Un aparato para depositar material en un sustrato.
ES348706A1 (es) Metodo y aparato para calentar yno revestir articulos.
ES315309A1 (es) Procedimiento para el transporte de particulas solidas mediante tuberias.
ES401291A1 (es) Dispositivo de tobera para procedimientos de reaccion qui- mica.
GB993566A (en) Process and apparatus for coating elongated objects
GB1226829A (en:Method)
SE9603586D0 (sv) A device for epitaxially growing objects and method for such a growth
GB934673A (en) Improvements in or relating to the production of semi-conductor materials
JPS53126867A (en) Cvd apparatus
GB1032071A (en) Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material
GB1208877A (en) A method of and system for conveying particulate elements
JPS55110030A (en) Method for vapor growth
ES398578A1 (es) Perfeccionamientos introducidos en cabezas de alimentacion para uso en reactores de sulfonacion.
GB1347865A (en) Process and apparatus for cooling hot gas/solids suspensions
GB1258125A (en:Method)
FR1344848A (fr) Dispositif obturable pour l'admission d'un gaz dans une enceinte sous vide très poussé
GB1058050A (en) Masking apparatus
GB1502252A (en) Pyrotechnic radiation emitter
SU425649A1 (ru) Газоструиная установка
JPS5212877A (en) Electron-cooled type device for detecting rays of radiant light