GB1111133A - Improvements relating to electromechanical transducers - Google Patents
Improvements relating to electromechanical transducersInfo
- Publication number
- GB1111133A GB1111133A GB18324/65A GB1832465A GB1111133A GB 1111133 A GB1111133 A GB 1111133A GB 18324/65 A GB18324/65 A GB 18324/65A GB 1832465 A GB1832465 A GB 1832465A GB 1111133 A GB1111133 A GB 1111133A
- Authority
- GB
- United Kingdom
- Prior art keywords
- neck
- pads
- sectional area
- cross
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005452 bending Methods 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R21/00—Variable-resistance transducers
- H04R21/04—Gramophone pick-ups using a stylus; Recorders using a stylus
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01G—WEIGHING
- G01G21/00—Details of weighing apparatus
- G01G21/02—Arrangements of bearings
- G01G21/12—Devices for preventing derangement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C10/00—Adjustable resistors
- H01C10/10—Adjustable resistors adjustable by mechanical pressure or force
- H01C10/12—Adjustable resistors adjustable by mechanical pressure or force by changing surface pressure between resistive masses or resistive and conductive masses, e.g. pile type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Gyroscopes (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
1,111,133. Electric solid-state devices. ENDEVCO CORPORATION. 30 April, 1965 [4 May, 1964], No. 18324/65. Heading H1K. [Also in Division H1] A block of single conductivity type piezo resistive semi-conductor material is shaped to form two pads 12 bridged by a thinner neck 10. The shape of the neck is such that it will crush before buckling under compressive stress, so that it can be used as a strain gauge in both tension and compression, and also in bending. Several transducer applications are described (see Division G1). The material may be silicon, germanium, silicon carbide or gallium arsenide doped, e.g. with boron, to achieve a resistivity of about 3 ohm-cm. The shape of the neck is such that in longitudinal section it is bounded by two semi-circular arcs and it is bi-concave in all transverse, sections. The neck length is not more than four times the thickness of the thinnest portion, and the cross-sectional area of the pads is at least ten times the cross-sectional area of the thinnest portion of the neck.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36467364A | 1964-05-04 | 1964-05-04 | |
| US42186964A | 1964-12-29 | 1964-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1111133A true GB1111133A (en) | 1968-04-24 |
Family
ID=27002594
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB18324/65A Expired GB1111133A (en) | 1964-05-04 | 1965-04-30 | Improvements relating to electromechanical transducers |
| GB54418/65A Expired GB1111134A (en) | 1964-05-04 | 1965-04-30 | Improvements relating to electromechanical transducers |
| GB54672/65A Expired GB1137889A (en) | 1964-05-04 | 1965-12-23 | Improvements relating to electro-mechanical transducers |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB54418/65A Expired GB1111134A (en) | 1964-05-04 | 1965-04-30 | Improvements relating to electromechanical transducers |
| GB54672/65A Expired GB1137889A (en) | 1964-05-04 | 1965-12-23 | Improvements relating to electro-mechanical transducers |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3501732A (en) |
| DE (2) | DE1698644A1 (en) |
| GB (3) | GB1111133A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3849874A (en) * | 1972-07-28 | 1974-11-26 | Bell & Howell Co | Method for making a semiconductor strain transducer |
| USRE29009E (en) | 1972-07-28 | 1976-10-26 | Bell & Howell Company | High sensitivity semiconductor strain gauge |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3673354A (en) * | 1969-05-08 | 1972-06-27 | Matsushita Electric Industrial Co Ltd | Semiconductor stress transducer |
| US4080636A (en) * | 1976-03-19 | 1978-03-21 | Ampex Corporation | System for damping vibrations in a deflectable transducer |
| US4498229A (en) * | 1982-10-04 | 1985-02-12 | Becton, Dickinson And Company | Piezoresistive transducer |
| US4809552A (en) * | 1987-11-23 | 1989-03-07 | Allied-Signal, Inc. | Multidirectional force-sensing transducer |
| GB2343953A (en) * | 1998-11-18 | 2000-05-24 | Autoliv Dev | A sensor arrangement with a deformable region |
| US6969809B2 (en) | 2003-09-22 | 2005-11-29 | Cts Corporation | Vehicle seat weight sensor |
| US6988412B1 (en) * | 2004-11-30 | 2006-01-24 | Endevco Corporation | Piezoresistive strain concentrator |
| DE202006004145U1 (en) * | 2006-03-11 | 2007-08-02 | Dr. Hahn Gmbh & Co. Kg | Band for hingedly connecting a movable wing to a fixed frame |
| FR2942538B1 (en) * | 2009-02-26 | 2012-06-08 | Airbus France | MEASURING DEVICE OF HINGE MOMENT |
| CN107796955B (en) * | 2017-09-30 | 2019-10-11 | 西安交通大学 | Multi-beam type single-mass in-plane biaxial acceleration sensor chip and preparation method thereof |
| CN107817364B (en) * | 2017-09-30 | 2019-10-11 | 西安交通大学 | A MEMS direct-pull direct-compression two-axis accelerometer chip and its preparation method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2909744A (en) * | 1956-10-22 | 1959-10-20 | Stxtham Instr Inc | Electrical accelerometer |
| NL101891C (en) * | 1957-02-23 | |||
| US3089108A (en) * | 1962-09-05 | 1963-05-07 | Electro Optical Systems Inc | Semiconductor strain gauge |
-
1964
- 1964-12-29 US US421869A patent/US3501732A/en not_active Expired - Lifetime
-
1965
- 1965-04-30 GB GB18324/65A patent/GB1111133A/en not_active Expired
- 1965-04-30 GB GB54418/65A patent/GB1111134A/en not_active Expired
- 1965-05-04 DE DE19651698644 patent/DE1698644A1/en active Pending
- 1965-12-23 GB GB54672/65A patent/GB1137889A/en not_active Expired
- 1965-12-29 DE DE1447995A patent/DE1447995C3/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3849874A (en) * | 1972-07-28 | 1974-11-26 | Bell & Howell Co | Method for making a semiconductor strain transducer |
| USRE29009E (en) | 1972-07-28 | 1976-10-26 | Bell & Howell Company | High sensitivity semiconductor strain gauge |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1447995A1 (en) | 1968-11-21 |
| DE1447995B2 (en) | 1970-12-10 |
| GB1137889A (en) | 1968-12-27 |
| DE1698644A1 (en) | 1971-02-25 |
| DE1447995C3 (en) | 1975-02-20 |
| GB1111134A (en) | 1968-04-24 |
| US3501732A (en) | 1970-03-17 |
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