GB1107009A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1107009A
GB1107009A GB5215466A GB5215466A GB1107009A GB 1107009 A GB1107009 A GB 1107009A GB 5215466 A GB5215466 A GB 5215466A GB 5215466 A GB5215466 A GB 5215466A GB 1107009 A GB1107009 A GB 1107009A
Authority
GB
United Kingdom
Prior art keywords
region
type
substrate
regions
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5215466A
Inventor
Derek Hubert Mash
Jack Rowland Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5215466A priority Critical patent/GB1107009A/en
Priority to DE19671589703 priority patent/DE1589703B2/en
Publication of GB1107009A publication Critical patent/GB1107009A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,107,009. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. 22 Nov., 1966, No. 52154/66. Heading H1K. The junction 8 between opposite conductivity-type regions 2, 5 of a semi-conductor device, the former of which regions surrounds the latter, extends perpendicularly to the surface of, and down to, a gallium arsenide substrate 1 on which the device is formed. In the embodiment shown the N-type region 2 is formed either by epitaxial deposition of gallium arsenide, gallium phosphide or germanium on to the semi-insulating substrate 1, or by conversion of the surface of the substrate to N-type semiconductivity. The P-type region 5 is then formed by diffusion through a suitable silicon oxide mask 3, and ohmic contacts 6, 7 are applied to the P and N regions, respectively to form a diode. The region 5 may alternatively be formed by alloying a suitable dopant into the region 2. In a further embodiment a shaft is etched in the region 2 down to the substrate 1 through the oxide mask, and the second region is formed by diffusion into the exposed surface of the region 2, to form an annular P-type zone (13), Fig. 4c (not shown). The shaft is then filled with conducting material to form ohmic contact to the zone (13), annular contact to the N-type first region (2) being made as above. The annular P-type zone may alternatively be formed by the alloying of a dopant which is inserted into the etched shaft. A transistor may be made by diffusing a P-type region 5 into the N-type region 2 as described above, and subsequently diffusing a further N-type region (13), Fig. 6j (not shown), into the region (5) through a suitable mask, to form a second junction perpendicular to the surface and extending down to the substrate (1), and surrounded by the first junction. A limited P-type diffusion stage may then be used to increase the surface area of a portion of the region (5), to facilitate the application of an ohmic base contact (17), emitter and collector contacts (18, 16) also being applied to the regions (13, 2) respectively.
GB5215466A 1966-11-22 1966-11-22 Improvements in or relating to semiconductor devices Expired GB1107009A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB5215466A GB1107009A (en) 1966-11-22 1966-11-22 Improvements in or relating to semiconductor devices
DE19671589703 DE1589703B2 (en) 1966-11-22 1967-11-11 METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENTS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5215466A GB1107009A (en) 1966-11-22 1966-11-22 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1107009A true GB1107009A (en) 1968-03-20

Family

ID=10462838

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5215466A Expired GB1107009A (en) 1966-11-22 1966-11-22 Improvements in or relating to semiconductor devices

Country Status (2)

Country Link
DE (1) DE1589703B2 (en)
GB (1) GB1107009A (en)

Also Published As

Publication number Publication date
DE1589703B2 (en) 1972-08-31
DE1589703A1 (en) 1970-03-26

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