GB1106314A - Semiconductor crystal of fibre-like structure - Google Patents
Semiconductor crystal of fibre-like structureInfo
- Publication number
- GB1106314A GB1106314A GB12181/66A GB1218166A GB1106314A GB 1106314 A GB1106314 A GB 1106314A GB 12181/66 A GB12181/66 A GB 12181/66A GB 1218166 A GB1218166 A GB 1218166A GB 1106314 A GB1106314 A GB 1106314A
- Authority
- GB
- United Kingdom
- Prior art keywords
- materials
- antimonide
- polycrystalline
- biphase
- manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 229910052748 manganese Inorganic materials 0.000 abstract 2
- 239000011572 manganese Substances 0.000 abstract 2
- 239000000155 melt Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052759 nickel Inorganic materials 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 239000010952 cobalt-chrome Substances 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 230000005294 ferromagnetic effect Effects 0.000 abstract 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0096033 | 1965-03-18 | ||
| DES0096034 | 1965-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1106314A true GB1106314A (en) | 1968-03-13 |
Family
ID=25998003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB12181/66A Expired GB1106314A (en) | 1965-03-18 | 1966-03-18 | Semiconductor crystal of fibre-like structure |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3442823A (zh) |
| AT (1) | AT258421B (zh) |
| BE (1) | BE675189A (zh) |
| CH (1) | CH453310A (zh) |
| DE (2) | DE1519868B2 (zh) |
| GB (1) | GB1106314A (zh) |
| NL (1) | NL6602216A (zh) |
| SE (1) | SE315267B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2443743A1 (fr) * | 1978-12-04 | 1980-07-04 | Colburn William | Dispositif electronique contenant une matiere composite et son procede de realisation |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3651385A (en) * | 1968-09-18 | 1972-03-21 | Sony Corp | Semiconductor device including a polycrystalline diode |
| US3624467A (en) * | 1969-02-17 | 1971-11-30 | Texas Instruments Inc | Monolithic integrated-circuit structure and method of fabrication |
| BE760094A (fr) * | 1969-12-09 | 1971-06-09 | Siemens Ag | Dispositif detecteur de rayonnement infra-rouge et son procede de fabrication |
| JPS5134268B2 (zh) * | 1972-07-13 | 1976-09-25 | ||
| US3953876A (en) * | 1973-06-07 | 1976-04-27 | Dow Corning Corporation | Silicon solar cell array |
| DE3333960A1 (de) * | 1983-09-20 | 1985-04-04 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium |
| US4532000A (en) * | 1983-09-28 | 1985-07-30 | Hughes Aircraft Company | Fabrication of single crystal fibers from congruently melting polycrystalline fibers |
| US4984037A (en) * | 1986-12-11 | 1991-01-08 | Gte Laboratories Incorporated | Semiconductor device with conductive rectifying rods |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE399896C (de) * | 1924-07-31 | Frederick Shand Goucher Dr | Verfahren zur Herstellung von Metalldraehten oder -faeden, insbesondere aus schwerschmelzbaren Metallen | |
| BE510303A (zh) * | 1951-11-16 | |||
| US3259582A (en) * | 1959-11-30 | 1966-07-05 | Siemens Ag | Mix-crystal semiconductor devices |
-
1965
- 1965-03-18 DE DE19651519868 patent/DE1519868B2/de active Pending
- 1965-03-18 DE DE19651519869 patent/DE1519869B1/de active Pending
- 1965-10-22 US US501918A patent/US3442823A/en not_active Expired - Lifetime
-
1966
- 1966-01-17 BE BE675189D patent/BE675189A/xx unknown
- 1966-02-07 AT AT107266A patent/AT258421B/de active
- 1966-02-16 CH CH226366A patent/CH453310A/de unknown
- 1966-02-21 NL NL6602216A patent/NL6602216A/xx unknown
- 1966-03-09 SE SE3119/66A patent/SE315267B/xx unknown
- 1966-03-18 GB GB12181/66A patent/GB1106314A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2443743A1 (fr) * | 1978-12-04 | 1980-07-04 | Colburn William | Dispositif electronique contenant une matiere composite et son procede de realisation |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1519869B1 (de) | 1970-01-15 |
| SE315267B (zh) | 1969-09-29 |
| DE1519868B2 (de) | 1971-07-29 |
| AT258421B (de) | 1967-11-27 |
| US3442823A (en) | 1969-05-06 |
| CH453310A (de) | 1968-06-14 |
| NL6602216A (zh) | 1966-09-19 |
| BE675189A (zh) | 1966-05-16 |
| DE1519868A1 (de) | 1970-04-16 |
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