GB1071576A - Improvements in and relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in and relating to methods of manufacturing semiconductor devices

Info

Publication number
GB1071576A
GB1071576A GB25071/64A GB2507164A GB1071576A GB 1071576 A GB1071576 A GB 1071576A GB 25071/64 A GB25071/64 A GB 25071/64A GB 2507164 A GB2507164 A GB 2507164A GB 1071576 A GB1071576 A GB 1071576A
Authority
GB
United Kingdom
Prior art keywords
layer
deposited
source
photo
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25071/64A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1071576A publication Critical patent/GB1071576A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/162—Testing steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Thin Film Transistor (AREA)
GB25071/64A 1963-06-20 1964-06-17 Improvements in and relating to methods of manufacturing semiconductor devices Expired GB1071576A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL294370 1963-06-20

Publications (1)

Publication Number Publication Date
GB1071576A true GB1071576A (en) 1967-06-07

Family

ID=19754801

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25071/64A Expired GB1071576A (en) 1963-06-20 1964-06-17 Improvements in and relating to methods of manufacturing semiconductor devices

Country Status (4)

Country Link
US (1) US3442647A (enExample)
DE (1) DE1489162C3 (enExample)
GB (1) GB1071576A (enExample)
NL (1) NL294370A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE760223C (de) * 1940-08-14 1953-06-15 Siemens & Halske A G Elektronenmikroskop, dessen Vakuum mit einer elektrisch beheizten Diffusionspumpe aufrechterhalten wird
DE1614635A1 (de) * 1967-10-23 1970-03-26 Siemens Ag Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke
NL6715013A (enExample) * 1967-11-04 1969-05-06
US3522649A (en) * 1969-04-25 1970-08-04 Werk Fur Bauelemente Der Nachr Method of producing isolated field effect transistors employing pyrolytic graphite
US3619732A (en) * 1969-05-16 1971-11-09 Energy Conversion Devices Inc Coplanar semiconductor switch structure
DE3279239D1 (en) * 1981-07-27 1988-12-29 Toshiba Kk Thin-film transistor and method of manufacture therefor
US4404731A (en) * 1981-10-01 1983-09-20 Xerox Corporation Method of forming a thin film transistor
US4678542A (en) * 1986-07-25 1987-07-07 Energy Conversion Devices, Inc. Self-alignment process for thin film diode array fabrication
GB8721193D0 (en) * 1987-09-09 1987-10-14 Wright S W Semiconductor devices
DE59409959D1 (de) * 1994-01-05 2001-12-20 Heraeus Electro Nite Int Elektrisch leitende verbindung
US7427776B2 (en) * 2004-10-07 2008-09-23 Hewlett-Packard Development Company, L.P. Thin-film transistor and methods
JP5506213B2 (ja) * 2009-03-06 2014-05-28 キヤノン株式会社 半導体素子の形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1967057A (en) * 1932-10-25 1934-07-17 Irvine Andrew Art of printing sensitized surfaces
US2914404A (en) * 1953-07-31 1959-11-24 Blaupunkt Werke Gmbh Method of producing two-dimensional circuits or circuit elements on supporting bases
NL122283C (enExample) * 1958-07-25
NL241541A (enExample) * 1959-07-22
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
NL255517A (enExample) * 1959-09-04
US3222173A (en) * 1961-05-15 1965-12-07 Vitramon Inc Method of making an electrical unit
US3313626A (en) * 1962-08-01 1967-04-11 Russeli H Whitney Process of making a lithographic printing plate

Also Published As

Publication number Publication date
NL294370A (enExample)
US3442647A (en) 1969-05-06
DE1489162B2 (de) 1975-01-23
DE1489162C3 (de) 1975-08-28
DE1489162A1 (de) 1969-06-12

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