GB1069220A - Improvements in or relating to the production of oxide layers on silicon bodies - Google Patents

Improvements in or relating to the production of oxide layers on silicon bodies

Info

Publication number
GB1069220A
GB1069220A GB30508/65A GB3050865A GB1069220A GB 1069220 A GB1069220 A GB 1069220A GB 30508/65 A GB30508/65 A GB 30508/65A GB 3050865 A GB3050865 A GB 3050865A GB 1069220 A GB1069220 A GB 1069220A
Authority
GB
United Kingdom
Prior art keywords
plate
cover
gas
bodies
rinsing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30508/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1069220A publication Critical patent/GB1069220A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A layer of SiO2 is produced on the surface of a monocrystalline Si body by first subjecting the body to the action of a gaseous reactant to remove a surface layer of Si, then rinsing with an inert gas, and oxidizing the Si surface with O2 or H2O vapour. The gaseous reactant may be a halogen or a hydrogen halide, e.g. HCL, and may be diluted with H2 or Ar. The removal of the Si layer may be effected by a transport reaction between the Si surface and the adjacent surface of a parallel cover-plate spaced at a distance of 0.1-1 mm. away and maintained at a temperature 15-30 DEG C. lower than the Si body. In this case, a halogen compound of Si, e.g. SiCl4 or SiHCl3 may be used, preferably mixed with H2 in the ratio 0.01 : 1 to 0.05 : 1; it decomposes in the hot parts of the vessel to deposit Si and form HCl, which then acts as the transport gas. The cover-plate may be made of Si, or quartz, SiC, or graphite, which may be coated with Si. It may rest on the Si body, be separated by a spacer, or be arranged freely, and is preferably removed before oxidation. A plurality of Si bodies may be treated by using a single cover-plate with slots between the bodies, or by stacking the bodies vertically so that each acts as a cover-plate for the next. The inert rinsing gas may be N2, H2 or a rare gas, e.g. Ar. The water vapour oxidant may be carried by H2 or a rare gas. The temperature of the Si body may be 1100-1250 DEG C. during etching, 1150-1200 DEG C. during rinsing, and 900-1150 DEG C. during oxidation. A continuous flow or closed system may be used.
GB30508/65A 1964-07-20 1965-07-19 Improvements in or relating to the production of oxide layers on silicon bodies Expired GB1069220A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES92134A DE1287411B (en) 1964-07-20 1964-07-20 A method of forming an oxide layer on the surface of a silicon crystal for semiconductor devices

Publications (1)

Publication Number Publication Date
GB1069220A true GB1069220A (en) 1967-05-17

Family

ID=7517013

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30508/65A Expired GB1069220A (en) 1964-07-20 1965-07-19 Improvements in or relating to the production of oxide layers on silicon bodies

Country Status (4)

Country Link
CH (1) CH467346A (en)
DE (1) DE1287411B (en)
GB (1) GB1069220A (en)
NL (1) NL6509178A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1085562A2 (en) * 1999-09-17 2001-03-21 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1085562A2 (en) * 1999-09-17 2001-03-21 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
EP1085562A3 (en) * 1999-09-17 2004-06-09 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
EP1603154A2 (en) * 1999-09-17 2005-12-07 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
EP1603154A3 (en) * 1999-09-17 2010-09-29 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film

Also Published As

Publication number Publication date
NL6509178A (en) 1966-01-21
CH467346A (en) 1969-01-15
DE1287411B (en) 1969-01-16

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