FR2301093A1 - Semiconductors using aluminium doped insulation layer - where aluminium is diffused simultaneously with boron required for the base - Google Patents

Semiconductors using aluminium doped insulation layer - where aluminium is diffused simultaneously with boron required for the base

Info

Publication number
FR2301093A1
FR2301093A1 FR7603823A FR7603823A FR2301093A1 FR 2301093 A1 FR2301093 A1 FR 2301093A1 FR 7603823 A FR7603823 A FR 7603823A FR 7603823 A FR7603823 A FR 7603823A FR 2301093 A1 FR2301093 A1 FR 2301093A1
Authority
FR
France
Prior art keywords
aluminium
base
insulation
boron
insulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7603823A
Other languages
French (fr)
Other versions
FR2301093B1 (en
Inventor
Ulrich Geisler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2301093A1 publication Critical patent/FR2301093A1/en
Application granted granted Critical
Publication of FR2301093B1 publication Critical patent/FR2301093B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

Abstract

Process for mfg. an aluminium-doped insulation layer, where a silicon substrate (1) is provided with an epitaxial Si layer (2) followed by a layer (3) of SiO3; after producing windows by photo-masking, boron is vapour deposited to make the base, and Al to obtain the insulation; a second photo-mask is then employed for selective etching of the Al to have Al in the insulation windows. The novelty is that the insulation diffusion of Al, and the base diffusion of boron are undertaken simultaneously at 1180-1230 degrees C. in a non-reducing or an oxidising protective gas atmos. The gas atmos. pref. consists of N2 followed by oxygen, and the second mask pref. results in a gap between the residual Al and the SiO2 (3). Used e.g. in the mfr. of planar thyristors or bipolar integrated circuits.
FR7603823A 1975-02-15 1976-02-12 Semiconductors using aluminium doped insulation layer - where aluminium is diffused simultaneously with boron required for the base Granted FR2301093A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752506436 DE2506436C3 (en) 1975-02-15 1975-02-15 Diffusion process for producing aluminum-doped isolation zones for semiconductor components

Publications (2)

Publication Number Publication Date
FR2301093A1 true FR2301093A1 (en) 1976-09-10
FR2301093B1 FR2301093B1 (en) 1982-08-20

Family

ID=5938970

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7603823A Granted FR2301093A1 (en) 1975-02-15 1976-02-12 Semiconductors using aluminium doped insulation layer - where aluminium is diffused simultaneously with boron required for the base

Country Status (2)

Country Link
DE (1) DE2506436C3 (en)
FR (1) FR2301093A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2305852A1 (en) * 1975-03-26 1976-10-22 Philips Nv PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR BODY WITH AN ANNULAR PART OF A P CONDUCTOR
FR2356272A1 (en) * 1976-06-21 1978-01-20 Rca Corp METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
FR2436496A1 (en) * 1978-09-18 1980-04-11 Gen Electric METHOD OF DIFFUSION OF ALUMINUM IN OPEN TUBE SIMULTANEOUSLY GENERATING A DEEPER INSULATION DIFFUSION
EP0054317A1 (en) * 1980-12-09 1982-06-23 Koninklijke Philips Electronics N.V. Method of diffusing aluminium from a layer that contains aluminium into a silicon body
EP0263270A2 (en) * 1986-09-30 1988-04-13 Siemens Aktiengesellschaft Process for providing a P-doped semiconducting region in an N-conductivity semiconducting body

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118367A (en) * 1977-03-25 1978-10-16 Hitachi Ltd Manufacture of semiconductor
DE3137813A1 (en) * 1981-09-23 1983-03-31 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method of producing a semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2305852A1 (en) * 1975-03-26 1976-10-22 Philips Nv PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR BODY WITH AN ANNULAR PART OF A P CONDUCTOR
FR2356272A1 (en) * 1976-06-21 1978-01-20 Rca Corp METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
FR2436496A1 (en) * 1978-09-18 1980-04-11 Gen Electric METHOD OF DIFFUSION OF ALUMINUM IN OPEN TUBE SIMULTANEOUSLY GENERATING A DEEPER INSULATION DIFFUSION
EP0054317A1 (en) * 1980-12-09 1982-06-23 Koninklijke Philips Electronics N.V. Method of diffusing aluminium from a layer that contains aluminium into a silicon body
EP0263270A2 (en) * 1986-09-30 1988-04-13 Siemens Aktiengesellschaft Process for providing a P-doped semiconducting region in an N-conductivity semiconducting body
EP0263270A3 (en) * 1986-09-30 1989-09-13 Siemens Aktiengesellschaft Process for providing a p-doped semiconducting region in an n-conductivity semiconducting body

Also Published As

Publication number Publication date
DE2506436C3 (en) 1980-05-14
FR2301093B1 (en) 1982-08-20
DE2506436A1 (en) 1976-08-26
DE2506436B2 (en) 1979-08-30

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