GB1055725A - Piezoresistive semiconductor systems - Google Patents

Piezoresistive semiconductor systems

Info

Publication number
GB1055725A
GB1055725A GB1461464A GB1461464A GB1055725A GB 1055725 A GB1055725 A GB 1055725A GB 1461464 A GB1461464 A GB 1461464A GB 1461464 A GB1461464 A GB 1461464A GB 1055725 A GB1055725 A GB 1055725A
Authority
GB
United Kingdom
Prior art keywords
junction
semi
conductor
pressure
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1461464A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1055725A publication Critical patent/GB1055725A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
GB1461464A 1963-04-11 1964-04-09 Piezoresistive semiconductor systems Expired GB1055725A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES84674A DE1231032B (de) 1963-04-11 1963-04-11 Druckabhaengiges Halbleiterbauelement mit mindestens einem pn-UEbergang

Publications (1)

Publication Number Publication Date
GB1055725A true GB1055725A (en) 1967-01-18

Family

ID=7511846

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1461464A Expired GB1055725A (en) 1963-04-11 1964-04-09 Piezoresistive semiconductor systems

Country Status (5)

Country Link
BE (1) BE646415A (xx)
CH (1) CH406659A (xx)
DE (1) DE1231032B (xx)
GB (1) GB1055725A (xx)
NL (1) NL6403888A (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1267437B (de) * 1965-03-12 1968-05-02 Telefunken Patent Anwendung einer einen Transistor enthaltenden Anordnung zur Umwandlung von mechanischer in elektrische Energie
DE3115565A1 (de) * 1981-04-16 1982-11-11 Nina Vladimirovna Moskva Alpatova Verfahren und einrichtung zur elektromechanischen stromsteuerung
DE102008008931B3 (de) * 2008-02-13 2009-07-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Schalten von elektrischen Signalen und Leistungen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2504627A (en) * 1946-03-01 1950-04-18 Purdue Research Foundation Electrical device with germanium alloys
US2795742A (en) * 1952-12-12 1957-06-11 Bell Telephone Labor Inc Semiconductive translating devices utilizing selected natural grain boundaries
US2790089A (en) * 1953-03-23 1957-04-23 Nat Aircraft Corp Three-element semi-conductor device
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2946114A (en) * 1957-04-03 1960-07-26 Automatic Elect Lab Method of assembling junction transistor
DE1084382B (de) * 1957-07-15 1960-06-30 Raytheon Mfg Co Halbleiteranordnung mit einem Halbleiterkoerper aus zwei Zonen entgegengesetzten Leitfaehigkeitstyps

Also Published As

Publication number Publication date
BE646415A (xx) 1964-10-12
DE1231032B (de) 1966-12-22
CH406659A (de) 1966-01-31
NL6403888A (xx) 1964-10-12

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