GB1035335A - Semi-conductor manufacture - Google Patents

Semi-conductor manufacture

Info

Publication number
GB1035335A
GB1035335A GB4050/63A GB405063A GB1035335A GB 1035335 A GB1035335 A GB 1035335A GB 4050/63 A GB4050/63 A GB 4050/63A GB 405063 A GB405063 A GB 405063A GB 1035335 A GB1035335 A GB 1035335A
Authority
GB
United Kingdom
Prior art keywords
crystal
semi
optically flat
cleavage
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4050/63A
Other languages
English (en)
Inventor
Christopher David Dobson
Albert Bernard Kaiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL302319D priority Critical patent/NL302319A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB4050/63A priority patent/GB1035335A/en
Priority to DEST21618A priority patent/DE1275704B/de
Priority to BE643214D priority patent/BE643214A/xx
Priority to FR962209A priority patent/FR1381102A/fr
Priority to FR996596A priority patent/FR86885E/fr
Publication of GB1035335A publication Critical patent/GB1035335A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
GB4050/63A 1963-01-31 1963-01-31 Semi-conductor manufacture Expired GB1035335A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL302319D NL302319A (enrdf_load_stackoverflow) 1963-01-31
GB4050/63A GB1035335A (en) 1963-01-31 1963-01-31 Semi-conductor manufacture
DEST21618A DE1275704B (de) 1963-01-31 1964-01-29 Verfahren zum Herstellen von stimulierbaren einkristallinen Halbleiterdioden fuer optische Sender oder Verstaerker
BE643214D BE643214A (enrdf_load_stackoverflow) 1963-01-31 1964-01-31
FR962209A FR1381102A (fr) 1963-01-31 1964-01-31 Corps à effet optique de laser
FR996596A FR86885E (fr) 1963-01-31 1964-11-27 Corps à effet optique de laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4050/63A GB1035335A (en) 1963-01-31 1963-01-31 Semi-conductor manufacture

Publications (1)

Publication Number Publication Date
GB1035335A true GB1035335A (en) 1966-07-06

Family

ID=9769780

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4050/63A Expired GB1035335A (en) 1963-01-31 1963-01-31 Semi-conductor manufacture

Country Status (4)

Country Link
BE (1) BE643214A (enrdf_load_stackoverflow)
DE (1) DE1275704B (enrdf_load_stackoverflow)
GB (1) GB1035335A (enrdf_load_stackoverflow)
NL (1) NL302319A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2978804A (en) * 1958-08-13 1961-04-11 Sylvania Electric Prod Method of classifying non-magnetic elements
FR1306192A (fr) * 1960-09-29 1962-10-13 Philips Gloeilampenfabreieken Dispositifs semi-conducteurs et leur procédé de fabrication

Also Published As

Publication number Publication date
NL302319A (enrdf_load_stackoverflow)
BE643214A (enrdf_load_stackoverflow) 1964-07-31
DE1275704B (de) 1968-08-22

Similar Documents

Publication Publication Date Title
GB993822A (en) Manufacture of semiconductive bodies
GB1273284A (en) Improvements in or relating to injection lasers
GB1263835A (en) Improvements in or relating to injection lasers
GB995715A (en) Lasers
GB1505124A (en) Pin diode
GB1534577A (en) Distributed feedback diode laser
GB1526631A (en) Semiconductor injection lasers
US3349475A (en) Planar injection laser structure
GB1228989A (enrdf_load_stackoverflow)
US3359508A (en) High power junction laser structure
GB1341221A (en) Directed emission light emitting diode
GB1035335A (en) Semi-conductor manufacture
GB1273013A (en) Improvements in or relating to laser diodes
SE7908485L (sv) Sett att klyva halvledardiodlaserplattor
GB1425634A (en) Optical component
JPS5362489A (en) Production of semiconductor laser
JPS5333080A (en) Light emitting semiconductor device and its production
JPS55150288A (en) Semiconductor laser
GB1094831A (en) Semiconductor junction devices
US3916339A (en) Asymmetrically excited semiconductor injection laser
JPS6461084A (en) Semiconductor laser
GB1385634A (en) Gaa1as lasers
GB1358064A (en) Reduction of thermally induced stress birefringence in a synthetic crystal by control of growth direction
GB1016776A (en) Optical maser device
GB1258360A (enrdf_load_stackoverflow)