GB1035335A - Semi-conductor manufacture - Google Patents

Semi-conductor manufacture

Info

Publication number
GB1035335A
GB1035335A GB405063A GB405063A GB1035335A GB 1035335 A GB1035335 A GB 1035335A GB 405063 A GB405063 A GB 405063A GB 405063 A GB405063 A GB 405063A GB 1035335 A GB1035335 A GB 1035335A
Authority
GB
United Kingdom
Prior art keywords
crystal
semi
optically flat
cleavage
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB405063A
Inventor
Christopher David Dobson
Albert Bernard Kaiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL302319D priority Critical patent/NL302319A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB405063A priority patent/GB1035335A/en
Priority to DEST21618A priority patent/DE1275704B/en
Priority to FR962209A priority patent/FR1381102A/en
Priority to BE643214D priority patent/BE643214A/xx
Priority to FR996596A priority patent/FR86885E/en
Publication of GB1035335A publication Critical patent/GB1035335A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action

Abstract

1,035,335. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Jan. 24, 1964 [Jan. 31, 1963], No. 4050/63. Heading H1K. [Also in Division H3] An injection laser is produced from a single crystal 1, Fig. 1, of semi-conductor material by forming an optically flat polished surface 2 in one of the crystal planes and doping this surface so as to form a light-emitting P-N junction region 4 within the material and parallel to the surface, the crystal then being cleaved at two points 19, 20 on the surface 2 so as to form a bar 8, Fig. 2, with two parallel surfaces 9, 10 orthogonal to the surface 2 which together define an opticallyreflecting cavity. The bars of material so formed are cut into cubes 13, 14 &c. to produce finished laser bodies, Fig. 3 (not shown), each body being soldered to a heat sink electrode and having a further electrode attached to the optically flat surface 2. The crystal material may be gallium arsenide which is doped with zinc to form the P-N junction region. The face 2 may be located with respect to the (iii) crystallographic plane and the cleaved surfaces formed along the (110) plane 5, the cleavage points 19, 20 being adjacent one end to minimize the cleavage along the (110) and (110) planes 6, 7. Alternative cleavage systems are possible if the optically flat surface 2 is formed on the (110) or (100) type faces.
GB405063A 1963-01-31 1963-01-31 Semi-conductor manufacture Expired GB1035335A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL302319D NL302319A (en) 1963-01-31
GB405063A GB1035335A (en) 1963-01-31 1963-01-31 Semi-conductor manufacture
DEST21618A DE1275704B (en) 1963-01-31 1964-01-29 Process for the production of stimulable single-crystalline semiconductor diodes for optical transmitters or amplifiers
FR962209A FR1381102A (en) 1963-01-31 1964-01-31 Laser optical effect body
BE643214D BE643214A (en) 1963-01-31 1964-01-31
FR996596A FR86885E (en) 1963-01-31 1964-11-27 Laser optical effect body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB405063A GB1035335A (en) 1963-01-31 1963-01-31 Semi-conductor manufacture

Publications (1)

Publication Number Publication Date
GB1035335A true GB1035335A (en) 1966-07-06

Family

ID=9769780

Family Applications (1)

Application Number Title Priority Date Filing Date
GB405063A Expired GB1035335A (en) 1963-01-31 1963-01-31 Semi-conductor manufacture

Country Status (4)

Country Link
BE (1) BE643214A (en)
DE (1) DE1275704B (en)
GB (1) GB1035335A (en)
NL (1) NL302319A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2978804A (en) * 1958-08-13 1961-04-11 Sylvania Electric Prod Method of classifying non-magnetic elements
FR1306192A (en) * 1960-09-29 1962-10-13 Philips Gloeilampenfabreieken Semiconductor devices and their manufacturing process

Also Published As

Publication number Publication date
BE643214A (en) 1964-07-31
DE1275704B (en) 1968-08-22
NL302319A (en)

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