GB1046702A - Improvements in or relating to lasers - Google Patents

Improvements in or relating to lasers

Info

Publication number
GB1046702A
GB1046702A GB1138564A GB1138564A GB1046702A GB 1046702 A GB1046702 A GB 1046702A GB 1138564 A GB1138564 A GB 1138564A GB 1138564 A GB1138564 A GB 1138564A GB 1046702 A GB1046702 A GB 1046702A
Authority
GB
United Kingdom
Prior art keywords
junctions
march
radiate
radiation
lasers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1138564A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1046702A publication Critical patent/GB1046702A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4043Edge-emitting structures with vertically stacked active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Abstract

1,046,702. Semi-conductor lasers. LICENTIA PATENT-VERWALTUNGS-G m.b.H. March 18, 1964 [March 19, 1963], No. 11385/64. Heading H1K. [Also in Division H3] A laser comprises a semiconductor crystal having two or more PN junctions Depending upon the current direction either junctions 1, 2 and 3 or junctions 4 and 5 produce coherent radiation. The reverse biased junctions do not block current flow since they act as backward-diode junctions due to the high doping level. The junctions may be separated sufficiently to radiate independently or may overlap sufficiently for all the junctions to radiate coherently The junctions may each have a different threshold for laser action. Mirrors may be provided to connect the junctions optically in series or parallel, and mirror coatings may be used to concentrate the radiation in a single direction.
GB1138564A 1963-03-19 1964-03-18 Improvements in or relating to lasers Expired GB1046702A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0044399 1963-03-19

Publications (1)

Publication Number Publication Date
GB1046702A true GB1046702A (en) 1966-10-26

Family

ID=7270661

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1138564A Expired GB1046702A (en) 1963-03-19 1964-03-18 Improvements in or relating to lasers

Country Status (3)

Country Link
CH (1) CH429975A (en)
DE (1) DE1464231A1 (en)
GB (1) GB1046702A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50126168U (en) * 1974-03-30 1975-10-16
JPS54114091A (en) * 1978-02-24 1979-09-05 Sharp Corp Semiconductor laser device
JPS59167083A (en) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS6010685A (en) * 1983-06-30 1985-01-19 Tokyo Inst Of Technol Distributed feedback type plane light emitting semiconductor laser
JPH01118471U (en) * 1988-12-06 1989-08-10
WO2011113638A1 (en) * 2010-03-17 2011-09-22 Osram Opto Semiconductors Gmbh Laser diode assembly and method for producing a laser diode assembly

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50126168U (en) * 1974-03-30 1975-10-16
JPS54114091A (en) * 1978-02-24 1979-09-05 Sharp Corp Semiconductor laser device
JPS5729874B2 (en) * 1978-02-24 1982-06-25
JPS59167083A (en) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS6010685A (en) * 1983-06-30 1985-01-19 Tokyo Inst Of Technol Distributed feedback type plane light emitting semiconductor laser
JPH01118471U (en) * 1988-12-06 1989-08-10
JPH046217Y2 (en) * 1988-12-06 1992-02-20
WO2011113638A1 (en) * 2010-03-17 2011-09-22 Osram Opto Semiconductors Gmbh Laser diode assembly and method for producing a laser diode assembly
US9130353B2 (en) 2010-03-17 2015-09-08 Osram Opto Semiconductors Gmbh Laser diode assembly and method for producing a laser diode assembly
US9692210B2 (en) 2010-03-17 2017-06-27 Osram Opto Semiconductors Gmbh Laser diode assembly
US10020639B2 (en) 2010-03-17 2018-07-10 Osram Opto Semiconductors Gmbh Laser diode assembly

Also Published As

Publication number Publication date
CH429975A (en) 1967-02-15
DE1464231A1 (en) 1968-12-12

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