GB1046702A - Improvements in or relating to lasers - Google Patents
Improvements in or relating to lasersInfo
- Publication number
- GB1046702A GB1046702A GB1138564A GB1138564A GB1046702A GB 1046702 A GB1046702 A GB 1046702A GB 1138564 A GB1138564 A GB 1138564A GB 1138564 A GB1138564 A GB 1138564A GB 1046702 A GB1046702 A GB 1046702A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junctions
- march
- radiate
- radiation
- lasers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
Abstract
1,046,702. Semi-conductor lasers. LICENTIA PATENT-VERWALTUNGS-G m.b.H. March 18, 1964 [March 19, 1963], No. 11385/64. Heading H1K. [Also in Division H3] A laser comprises a semiconductor crystal having two or more PN junctions Depending upon the current direction either junctions 1, 2 and 3 or junctions 4 and 5 produce coherent radiation. The reverse biased junctions do not block current flow since they act as backward-diode junctions due to the high doping level. The junctions may be separated sufficiently to radiate independently or may overlap sufficiently for all the junctions to radiate coherently The junctions may each have a different threshold for laser action. Mirrors may be provided to connect the junctions optically in series or parallel, and mirror coatings may be used to concentrate the radiation in a single direction.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEL0044399 | 1963-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1046702A true GB1046702A (en) | 1966-10-26 |
Family
ID=7270661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1138564A Expired GB1046702A (en) | 1963-03-19 | 1964-03-18 | Improvements in or relating to lasers |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH429975A (en) |
DE (1) | DE1464231A1 (en) |
GB (1) | GB1046702A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50126168U (en) * | 1974-03-30 | 1975-10-16 | ||
JPS54114091A (en) * | 1978-02-24 | 1979-09-05 | Sharp Corp | Semiconductor laser device |
JPS59167083A (en) * | 1983-03-12 | 1984-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS6010685A (en) * | 1983-06-30 | 1985-01-19 | Tokyo Inst Of Technol | Distributed feedback type plane light emitting semiconductor laser |
JPH01118471U (en) * | 1988-12-06 | 1989-08-10 | ||
WO2011113638A1 (en) * | 2010-03-17 | 2011-09-22 | Osram Opto Semiconductors Gmbh | Laser diode assembly and method for producing a laser diode assembly |
-
1963
- 1963-03-19 DE DE19631464231 patent/DE1464231A1/en active Pending
-
1964
- 1964-03-11 CH CH314064A patent/CH429975A/en unknown
- 1964-03-18 GB GB1138564A patent/GB1046702A/en not_active Expired
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50126168U (en) * | 1974-03-30 | 1975-10-16 | ||
JPS54114091A (en) * | 1978-02-24 | 1979-09-05 | Sharp Corp | Semiconductor laser device |
JPS5729874B2 (en) * | 1978-02-24 | 1982-06-25 | ||
JPS59167083A (en) * | 1983-03-12 | 1984-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS6010685A (en) * | 1983-06-30 | 1985-01-19 | Tokyo Inst Of Technol | Distributed feedback type plane light emitting semiconductor laser |
JPH01118471U (en) * | 1988-12-06 | 1989-08-10 | ||
JPH046217Y2 (en) * | 1988-12-06 | 1992-02-20 | ||
WO2011113638A1 (en) * | 2010-03-17 | 2011-09-22 | Osram Opto Semiconductors Gmbh | Laser diode assembly and method for producing a laser diode assembly |
US9130353B2 (en) | 2010-03-17 | 2015-09-08 | Osram Opto Semiconductors Gmbh | Laser diode assembly and method for producing a laser diode assembly |
US9692210B2 (en) | 2010-03-17 | 2017-06-27 | Osram Opto Semiconductors Gmbh | Laser diode assembly |
US10020639B2 (en) | 2010-03-17 | 2018-07-10 | Osram Opto Semiconductors Gmbh | Laser diode assembly |
Also Published As
Publication number | Publication date |
---|---|
CH429975A (en) | 1967-02-15 |
DE1464231A1 (en) | 1968-12-12 |
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