GB1031043A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB1031043A
GB1031043A GB6852/63A GB685263A GB1031043A GB 1031043 A GB1031043 A GB 1031043A GB 6852/63 A GB6852/63 A GB 6852/63A GB 685263 A GB685263 A GB 685263A GB 1031043 A GB1031043 A GB 1031043A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
conductivity type
conductivity
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6852/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Secheron SA
Original Assignee
Ateliers de Secheron SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ateliers de Secheron SA filed Critical Ateliers de Secheron SA
Publication of GB1031043A publication Critical patent/GB1031043A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Thyristors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
GB6852/63A 1962-02-20 1963-02-20 Improvements in or relating to semi-conductor devices Expired GB1031043A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH202162A CH414866A (de) 1962-02-20 1962-02-20 Aus p- und n-Schichten aufgebautes Gleichrichterelement

Publications (1)

Publication Number Publication Date
GB1031043A true GB1031043A (en) 1966-05-25

Family

ID=4224045

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6852/63A Expired GB1031043A (en) 1962-02-20 1963-02-20 Improvements in or relating to semi-conductor devices

Country Status (6)

Country Link
AT (1) AT255569B (cg-RX-API-DMAC10.html)
BE (1) BE628619A (cg-RX-API-DMAC10.html)
CH (1) CH414866A (cg-RX-API-DMAC10.html)
DE (2) DE1789155B1 (cg-RX-API-DMAC10.html)
FR (1) FR1360744A (cg-RX-API-DMAC10.html)
GB (1) GB1031043A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589529A1 (de) * 1967-06-19 1970-04-09 Bosch Gmbh Robert Planartransistor
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
EP4109495A1 (de) * 2021-06-23 2022-12-28 Infineon Technologies Bipolar GmbH & Co. KG Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6603372A (cg-RX-API-DMAC10.html) * 1965-03-25 1966-09-26
DE7328984U (de) * 1973-07-06 1975-05-15 Bbc Ag Brown Boveri & Cie Leistungshalbleiterbauelement
CH566643A5 (cg-RX-API-DMAC10.html) * 1973-10-11 1975-09-15 Bbc Brown Boveri & Cie
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113266C (cg-RX-API-DMAC10.html) * 1957-01-18

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589529A1 (de) * 1967-06-19 1970-04-09 Bosch Gmbh Robert Planartransistor
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
EP4109495A1 (de) * 2021-06-23 2022-12-28 Infineon Technologies Bipolar GmbH & Co. KG Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements
US12342581B2 (en) * 2021-06-23 2025-06-24 Infineon Technologies Bipolar Gmbh & Co. Kg Method and device for producing an edge structure of a semiconductor component

Also Published As

Publication number Publication date
BE628619A (cg-RX-API-DMAC10.html)
CH414866A (de) 1966-06-15
AT255569B (de) 1967-07-10
DE1789155B1 (de) 1976-03-11
FR1360744A (fr) 1964-05-15
DE1439215B2 (de) 1973-10-18
DE1439215A1 (de) 1968-10-17

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