CH414866A - Aus p- und n-Schichten aufgebautes Gleichrichterelement - Google Patents

Aus p- und n-Schichten aufgebautes Gleichrichterelement

Info

Publication number
CH414866A
CH414866A CH202162A CH202162A CH414866A CH 414866 A CH414866 A CH 414866A CH 202162 A CH202162 A CH 202162A CH 202162 A CH202162 A CH 202162A CH 414866 A CH414866 A CH 414866A
Authority
CH
Switzerland
Prior art keywords
layers
element made
rectifier element
rectifier
Prior art date
Application number
CH202162A
Other languages
English (en)
Inventor
Eduard Prof Gerecke
Grosrey Jean
Original Assignee
Secheron Atel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE628619D priority Critical patent/BE628619A/xx
Application filed by Secheron Atel filed Critical Secheron Atel
Priority to CH202162A priority patent/CH414866A/de
Priority to AT123263A priority patent/AT255569B/de
Priority to DE19631789155 priority patent/DE1789155B1/de
Priority to DE1963S0083800 priority patent/DE1439215B2/de
Priority to GB685263A priority patent/GB1031043A/en
Priority to FR925466A priority patent/FR1360744A/fr
Publication of CH414866A publication Critical patent/CH414866A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CH202162A 1962-02-20 1962-02-20 Aus p- und n-Schichten aufgebautes Gleichrichterelement CH414866A (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
BE628619D BE628619A (de) 1962-02-20
CH202162A CH414866A (de) 1962-02-20 1962-02-20 Aus p- und n-Schichten aufgebautes Gleichrichterelement
AT123263A AT255569B (de) 1962-02-20 1963-02-18 Mehrschichthalbleiter, insbesondere Thyristor für Hochspannung und große Durchgangsleistungen
DE19631789155 DE1789155B1 (de) 1962-02-20 1963-02-18 Leistungshalbleiterbauelement und verfahren zum herstellen
DE1963S0083800 DE1439215B2 (de) 1962-02-20 1963-02-18 Leistungshalbleiterbauelement und Verfahren zum Herstellen desselben
GB685263A GB1031043A (en) 1962-02-20 1963-02-20 Improvements in or relating to semi-conductor devices
FR925466A FR1360744A (fr) 1962-02-20 1963-02-20 Semi-conducteur composé de couches ? et ? pour hautes tensions et grandes puissances

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH202162A CH414866A (de) 1962-02-20 1962-02-20 Aus p- und n-Schichten aufgebautes Gleichrichterelement

Publications (1)

Publication Number Publication Date
CH414866A true CH414866A (de) 1966-06-15

Family

ID=4224045

Family Applications (1)

Application Number Title Priority Date Filing Date
CH202162A CH414866A (de) 1962-02-20 1962-02-20 Aus p- und n-Schichten aufgebautes Gleichrichterelement

Country Status (6)

Country Link
AT (1) AT255569B (de)
BE (1) BE628619A (de)
CH (1) CH414866A (de)
DE (2) DE1789155B1 (de)
FR (1) FR1360744A (de)
GB (1) GB1031043A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2354854A1 (de) * 1973-10-11 1975-04-30 Bbc Brown Boveri & Cie Verfahren und vorrichtung zur herstellung eines halbleiterkoerpers

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6603372A (de) * 1965-03-25 1966-09-26
DE1589529C3 (de) * 1967-06-19 1982-10-14 Robert Bosch Gmbh, 7000 Stuttgart Planartransistor
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich
DE102021116206B3 (de) * 2021-06-23 2022-09-29 Infineon Technologies Bipolar Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2354854A1 (de) * 1973-10-11 1975-04-30 Bbc Brown Boveri & Cie Verfahren und vorrichtung zur herstellung eines halbleiterkoerpers

Also Published As

Publication number Publication date
FR1360744A (fr) 1964-05-15
AT255569B (de) 1967-07-10
BE628619A (de)
DE1439215A1 (de) 1968-10-17
GB1031043A (en) 1966-05-25
DE1789155B1 (de) 1976-03-11
DE1439215B2 (de) 1973-10-18

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