CH401272A - Hochspannungs-Halbleitergleichrichter - Google Patents
Hochspannungs-HalbleitergleichrichterInfo
- Publication number
- CH401272A CH401272A CH566562A CH566562A CH401272A CH 401272 A CH401272 A CH 401272A CH 566562 A CH566562 A CH 566562A CH 566562 A CH566562 A CH 566562A CH 401272 A CH401272 A CH 401272A
- Authority
- CH
- Switzerland
- Prior art keywords
- high voltage
- voltage semiconductor
- semiconductor rectifier
- rectifier
- voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11555061A | 1961-06-07 | 1961-06-07 | |
US507216A US3335296A (en) | 1961-06-07 | 1965-11-10 | Semiconductor devices capable of supporting large reverse voltages |
Publications (1)
Publication Number | Publication Date |
---|---|
CH401272A true CH401272A (de) | 1965-10-31 |
Family
ID=26813313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH566562A CH401272A (de) | 1961-06-07 | 1962-05-11 | Hochspannungs-Halbleitergleichrichter |
Country Status (3)
Country | Link |
---|---|
US (1) | US3335296A (de) |
CH (1) | CH401272A (de) |
DE (1) | DE1294558B (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
GB1140822A (en) * | 1967-01-26 | 1969-01-22 | Westinghouse Brake & Signal | Semi-conductor elements |
US3700982A (en) * | 1968-08-12 | 1972-10-24 | Int Rectifier Corp | Controlled rectifier having gate electrode which extends across the gate and cathode layers |
US3622844A (en) * | 1969-08-18 | 1971-11-23 | Texas Instruments Inc | Avalanche photodiode utilizing schottky-barrier configurations |
US3798512A (en) * | 1970-09-28 | 1974-03-19 | Ibm | Fet device with guard ring and fabrication method therefor |
US4003072A (en) * | 1972-04-20 | 1977-01-11 | Sony Corporation | Semiconductor device with high voltage breakdown resistance |
JPS523277B2 (de) * | 1973-05-19 | 1977-01-27 | ||
JPS5242634B2 (de) * | 1973-09-03 | 1977-10-25 | ||
JPS5631898B2 (de) * | 1974-01-11 | 1981-07-24 | ||
US4032961A (en) * | 1974-10-16 | 1977-06-28 | General Electric Company | Gate modulated bipolar transistor |
US3979769A (en) * | 1974-10-16 | 1976-09-07 | General Electric Company | Gate modulated bipolar transistor |
US5083185A (en) * | 1985-02-15 | 1992-01-21 | Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry | Surge absorption device |
US5949124A (en) * | 1995-10-31 | 1999-09-07 | Motorola, Inc. | Edge termination structure |
US6060906A (en) * | 1998-04-29 | 2000-05-09 | Industrial Technology Research Institute | Bidirectional buffer with active pull-up/latch circuit for mixed-voltage applications |
JP3914785B2 (ja) | 2002-02-20 | 2007-05-16 | 新電元工業株式会社 | ダイオード素子 |
US7135718B2 (en) * | 2002-02-20 | 2006-11-14 | Shindengen Electric Manufacturing Co., Ltd. | Diode device and transistor device |
US6841825B2 (en) * | 2002-06-05 | 2005-01-11 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device |
JP3971670B2 (ja) * | 2002-06-28 | 2007-09-05 | 新電元工業株式会社 | 半導体装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA509126A (en) * | 1949-05-28 | 1955-01-11 | Western Electric Company, Incorporated | Semiconductor translating devices |
US2764642A (en) * | 1952-10-31 | 1956-09-25 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
US3087098A (en) * | 1954-10-05 | 1963-04-23 | Motorola Inc | Transistor |
US2929999A (en) * | 1955-09-19 | 1960-03-22 | Philco Corp | Semiconductive device and apparatus |
US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
US3087099A (en) * | 1959-01-02 | 1963-04-23 | Sprague Electric Co | Narrow web mesa transistor structure |
US3148284A (en) * | 1959-01-30 | 1964-09-08 | Zenith Radio Corp | Semi-conductor apparatus with field-biasing means |
US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
US2919388A (en) * | 1959-03-17 | 1959-12-29 | Hoffman Electronics Corp | Semiconductor devices |
US3091703A (en) * | 1959-04-08 | 1963-05-28 | Raytheon Co | Semiconductor devices utilizing carrier injection into a space charge region |
DE1796305U (de) * | 1959-05-16 | 1959-09-24 | Siemens Ag | Halbleiteranordnung mit mindestens einer flaechigen elektrode. |
US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
US2991371A (en) * | 1959-06-15 | 1961-07-04 | Sprague Electric Co | Variable capacitor |
GB915688A (en) * | 1959-10-07 | 1963-01-16 | Pye Ltd | Improvements in semiconductor devices |
NL261720A (de) * | 1960-03-04 | |||
DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
NL267818A (de) * | 1960-08-02 | |||
NL267390A (de) * | 1960-09-28 | |||
US3076104A (en) * | 1960-11-29 | 1963-01-29 | Texas Instruments Inc | Mesa diode with guarded junction and reverse bias means for leakage control |
US3210617A (en) * | 1961-01-11 | 1965-10-05 | Westinghouse Electric Corp | High gain transistor comprising direct connection between base and emitter electrodes |
US3210560A (en) * | 1961-04-17 | 1965-10-05 | Westinghouse Electric Corp | Semiconductor device |
AT233119B (de) * | 1962-01-26 | 1964-04-25 | Siemens Ag | Halbleiteranordnung mit einem im wesentlichen einkristallinen Halbleiterkörper |
-
1962
- 1962-05-04 DE DEW32198A patent/DE1294558B/de active Pending
- 1962-05-11 CH CH566562A patent/CH401272A/de unknown
-
1965
- 1965-11-10 US US507216A patent/US3335296A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1294558B (de) | 1969-05-08 |
US3335296A (en) | 1967-08-08 |
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