GB1023447A - Improvements in or relating to methods of heat-treating material - Google Patents
Improvements in or relating to methods of heat-treating materialInfo
- Publication number
- GB1023447A GB1023447A GB4386862A GB4386862A GB1023447A GB 1023447 A GB1023447 A GB 1023447A GB 4386862 A GB4386862 A GB 4386862A GB 4386862 A GB4386862 A GB 4386862A GB 1023447 A GB1023447 A GB 1023447A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heated
- store
- gallium
- arsenide
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 8
- 229910052785 arsenic Inorganic materials 0.000 abstract 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 6
- 229910052733 gallium Inorganic materials 0.000 abstract 6
- 238000010438 heat treatment Methods 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 abstract 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 4
- 229910052738 indium Inorganic materials 0.000 abstract 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- GPCFLCJOIBCSAR-UHFFFAOYSA-N [Cd].[Cd].[Cd].[Sb].[Sb] Chemical compound [Cd].[Cd].[Cd].[Sb].[Sb] GPCFLCJOIBCSAR-UHFFFAOYSA-N 0.000 abstract 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 238000005247 gettering Methods 0.000 abstract 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 230000004048 modification Effects 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 2
- 239000011733 molybdenum Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- 238000007789 sealing Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000004857 zone melting Methods 0.000 abstract 2
- 238000005245 sintering Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL271565 | 1961-11-23 | ||
| NL271765 | 1961-11-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1023447A true GB1023447A (en) | 1966-03-23 |
Family
ID=26641806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4386862A Expired GB1023447A (en) | 1961-11-23 | 1962-11-20 | Improvements in or relating to methods of heat-treating material |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE625140A (enrdf_load_stackoverflow) |
| CH (1) | CH450369A (enrdf_load_stackoverflow) |
| GB (1) | GB1023447A (enrdf_load_stackoverflow) |
| NL (2) | NL133387C (enrdf_load_stackoverflow) |
-
0
- NL NL271765D patent/NL271765A/xx unknown
- NL NL133387D patent/NL133387C/xx active
- BE BE625140D patent/BE625140A/xx unknown
-
1962
- 1962-11-20 GB GB4386862A patent/GB1023447A/en not_active Expired
- 1962-11-20 CH CH1364862A patent/CH450369A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE625140A (enrdf_load_stackoverflow) | |
| CH450369A (de) | 1968-01-31 |
| DE1442795B2 (de) | 1976-04-08 |
| NL271765A (enrdf_load_stackoverflow) | |
| DE1442795A1 (de) | 1969-06-19 |
| NL133387C (enrdf_load_stackoverflow) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2868678A (en) | Method of forming large area pn junctions | |
| US3615203A (en) | Method for the preparation of groups iii{14 v single crystal semiconductors | |
| GB983004A (en) | Improvements in and relating to methods of thermal treatment of semiconductor material | |
| Johnson | Liquid encapsulated floating zone melting of GaAs | |
| US2711379A (en) | Method of controlling the concentration of impurities in semi-conducting materials | |
| GB1023447A (en) | Improvements in or relating to methods of heat-treating material | |
| GB1029804A (en) | A process for producing a substantially monocrystalline rod of semiconductor material | |
| US2841860A (en) | Semiconductor devices and methods | |
| GB990518A (en) | Improvements in methods of producing an unsaturated vapour pressure of a substance in a space | |
| US3215571A (en) | Fabrication of semiconductor bodies | |
| GB1031560A (en) | Improvements in or relating to the production of monocrystalline semiconductor material | |
| GB930432A (en) | Improvements in or relating to methods of making bodies of semi-conductor material | |
| GB885323A (en) | Improvements in or relating to apparatus and a method for purifying and/or endowing with an impurity a semi-conducting material | |
| GB1102205A (en) | Improvements in or relating to epitaxially grown layers of binary semiconductor compounds | |
| GB1031193A (en) | A process for use in the production of substantially monocrystalline wafers | |
| GB824189A (en) | Improvements in or relating to bismuth telluride | |
| GB993880A (en) | Improvements in or relating to methods and apparatus for pulling crystals from a melt | |
| US3223493A (en) | Method of crucible-free zone-melting of semiconductor material | |
| GB850171A (en) | Improvements in and relating to semiconductor devices | |
| GB1014500A (en) | Purifying semi-conductor materials | |
| US2988464A (en) | Method of making transistor having thin base region | |
| GB932668A (en) | Improvements in or relating to methods of and apparatus for heat treatment of semi-conductor material | |
| GB1006369A (en) | Synthesising gallium phosphide | |
| GB809486A (en) | Method and apparatus for producing single-crystal semiconductor material | |
| US3085979A (en) | Method for indiffusion |