GB1001693A - Process for the manufacture of semiconductor arrangements - Google Patents

Process for the manufacture of semiconductor arrangements

Info

Publication number
GB1001693A
GB1001693A GB36059/63A GB3605963A GB1001693A GB 1001693 A GB1001693 A GB 1001693A GB 36059/63 A GB36059/63 A GB 36059/63A GB 3605963 A GB3605963 A GB 3605963A GB 1001693 A GB1001693 A GB 1001693A
Authority
GB
United Kingdom
Prior art keywords
zinc
metal
deposited
cadmium
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36059/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB1001693A publication Critical patent/GB1001693A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/973Substrate orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Recrystallisation Techniques (AREA)
GB36059/63A 1962-09-14 1963-09-12 Process for the manufacture of semiconductor arrangements Expired GB1001693A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0081455 DE1194504C2 (de) 1962-09-14 1962-09-14 Verfahren zur Herstellung von Halbleiter-anordnungen

Publications (1)

Publication Number Publication Date
GB1001693A true GB1001693A (en) 1965-08-18

Family

ID=7509624

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36059/63A Expired GB1001693A (en) 1962-09-14 1963-09-12 Process for the manufacture of semiconductor arrangements

Country Status (6)

Country Link
US (1) US3386893A (enExample)
CH (1) CH412117A (enExample)
DE (1) DE1194504C2 (enExample)
FR (1) FR1369631A (enExample)
GB (1) GB1001693A (enExample)
NL (1) NL297836A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3612960A (en) * 1968-10-15 1971-10-12 Tokyo Shibaura Electric Co Semiconductor device
US3753804A (en) * 1971-08-31 1973-08-21 Philips Corp Method of manufacturing a semiconductor device
GB2111998A (en) * 1981-11-25 1983-07-13 Secr Defence The preparation of adducts which may be used in the preparation of compound semiconductor materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980594A (en) * 1954-06-01 1961-04-18 Rca Corp Methods of making semi-conductor devices
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
US2814589A (en) * 1955-08-02 1957-11-26 Bell Telephone Labor Inc Method of plating silicon
GB861679A (en) * 1956-02-24 1961-02-22 Post Office Improvements in or relating to methods for the treatment of semi-conducting materialand semi-conductor junction devices
US2873232A (en) * 1956-06-18 1959-02-10 Philco Corp Method of jet plating
BE562375A (enExample) * 1957-01-02
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
NL247276A (enExample) * 1959-01-12
NL247746A (enExample) * 1959-01-27
US2978661A (en) * 1959-03-03 1961-04-04 Battelle Memorial Institute Semiconductor devices
US3106764A (en) * 1959-04-20 1963-10-15 Westinghouse Electric Corp Continuous process for producing semiconductor devices
US3075892A (en) * 1959-09-15 1963-01-29 Westinghouse Electric Corp Process for making semiconductor devices
NL267219A (enExample) * 1960-07-21
NL279119A (enExample) * 1961-06-01
US3152023A (en) * 1961-10-25 1964-10-06 Cutler Hammer Inc Method of making semiconductor devices

Also Published As

Publication number Publication date
DE1194504B (de) 1965-06-10
US3386893A (en) 1968-06-04
FR1369631A (fr) 1964-08-14
NL297836A (enExample)
CH412117A (de) 1966-04-30
DE1194504C2 (de) 1966-03-03

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