CH412117A - Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren wenigstens eines Metalls in einen Halbleiterkörper - Google Patents

Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren wenigstens eines Metalls in einen Halbleiterkörper

Info

Publication number
CH412117A
CH412117A CH1042863A CH1042863A CH412117A CH 412117 A CH412117 A CH 412117A CH 1042863 A CH1042863 A CH 1042863A CH 1042863 A CH1042863 A CH 1042863A CH 412117 A CH412117 A CH 412117A
Authority
CH
Switzerland
Prior art keywords
alloying
metal
semiconductor
arrangements
producing
Prior art date
Application number
CH1042863A
Other languages
English (en)
Inventor
Hartmut Dr Seiter
Hornig Martin
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH412117A publication Critical patent/CH412117A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Recrystallisation Techniques (AREA)
CH1042863A 1962-09-14 1963-08-23 Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren wenigstens eines Metalls in einen Halbleiterkörper CH412117A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0081455 DE1194504C2 (de) 1962-09-14 1962-09-14 Verfahren zur Herstellung von Halbleiter-anordnungen

Publications (1)

Publication Number Publication Date
CH412117A true CH412117A (de) 1966-04-30

Family

ID=7509624

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1042863A CH412117A (de) 1962-09-14 1963-08-23 Verfahren zur Herstellung von Halbleiteranordnungen durch Einlegieren wenigstens eines Metalls in einen Halbleiterkörper

Country Status (6)

Country Link
US (1) US3386893A (de)
CH (1) CH412117A (de)
DE (1) DE1194504C2 (de)
FR (1) FR1369631A (de)
GB (1) GB1001693A (de)
NL (1) NL297836A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3612960A (en) * 1968-10-15 1971-10-12 Tokyo Shibaura Electric Co Semiconductor device
US3753804A (en) * 1971-08-31 1973-08-21 Philips Corp Method of manufacturing a semiconductor device
GB2111998A (en) * 1981-11-25 1983-07-13 Secr Defence The preparation of adducts which may be used in the preparation of compound semiconductor materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980594A (en) * 1954-06-01 1961-04-18 Rca Corp Methods of making semi-conductor devices
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
US2814589A (en) * 1955-08-02 1957-11-26 Bell Telephone Labor Inc Method of plating silicon
GB861679A (en) * 1956-02-24 1961-02-22 Post Office Improvements in or relating to methods for the treatment of semi-conducting materialand semi-conductor junction devices
US2873232A (en) * 1956-06-18 1959-02-10 Philco Corp Method of jet plating
BE562375A (de) * 1957-01-02
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
NL247276A (de) * 1959-01-12
NL247746A (de) * 1959-01-27
US2978661A (en) * 1959-03-03 1961-04-04 Battelle Memorial Institute Semiconductor devices
US3106764A (en) * 1959-04-20 1963-10-15 Westinghouse Electric Corp Continuous process for producing semiconductor devices
US3075892A (en) * 1959-09-15 1963-01-29 Westinghouse Electric Corp Process for making semiconductor devices
NL267219A (de) * 1960-07-21
NL279119A (de) * 1961-06-01
US3152023A (en) * 1961-10-25 1964-10-06 Cutler Hammer Inc Method of making semiconductor devices

Also Published As

Publication number Publication date
GB1001693A (en) 1965-08-18
FR1369631A (fr) 1964-08-14
DE1194504C2 (de) 1966-03-03
DE1194504B (de) 1965-06-10
NL297836A (de)
US3386893A (en) 1968-06-04

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