GB0704516D0 - Diamond - Google Patents

Diamond

Info

Publication number
GB0704516D0
GB0704516D0 GBGB0704516.4A GB0704516A GB0704516D0 GB 0704516 D0 GB0704516 D0 GB 0704516D0 GB 0704516 A GB0704516 A GB 0704516A GB 0704516 D0 GB0704516 D0 GB 0704516D0
Authority
GB
United Kingdom
Prior art keywords
single crystal
crystal diamond
aspect ratio
growth surface
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0704516.4A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Ltd
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Priority to GBGB0704516.4A priority Critical patent/GB0704516D0/en
Publication of GB0704516D0 publication Critical patent/GB0704516D0/en
Priority to JP2009552319A priority patent/JP5522606B2/ja
Priority to EP08719613.5A priority patent/EP2125188B1/en
Priority to PCT/IB2008/050851 priority patent/WO2008107860A2/en
Priority to US12/529,183 priority patent/US8574535B2/en
Priority to CN2008800121066A priority patent/CN101657253B/zh
Priority to US14/019,663 priority patent/US9034296B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/061—Graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Nonmetal Cutting Devices (AREA)
GBGB0704516.4A 2007-03-08 2007-03-08 Diamond Ceased GB0704516D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB0704516.4A GB0704516D0 (en) 2007-03-08 2007-03-08 Diamond
JP2009552319A JP5522606B2 (ja) 2007-03-08 2008-03-07 ダイヤモンド
EP08719613.5A EP2125188B1 (en) 2007-03-08 2008-03-07 Method for synthesizing large single crystal diamonds
PCT/IB2008/050851 WO2008107860A2 (en) 2007-03-08 2008-03-07 Large single crystal diamonds
US12/529,183 US8574535B2 (en) 2007-03-08 2008-03-07 Diamond
CN2008800121066A CN101657253B (zh) 2007-03-08 2008-03-07 大的单晶金刚石
US14/019,663 US9034296B2 (en) 2007-03-08 2013-09-06 Diamond

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0704516.4A GB0704516D0 (en) 2007-03-08 2007-03-08 Diamond

Publications (1)

Publication Number Publication Date
GB0704516D0 true GB0704516D0 (en) 2007-04-18

Family

ID=37988627

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0704516.4A Ceased GB0704516D0 (en) 2007-03-08 2007-03-08 Diamond

Country Status (6)

Country Link
US (2) US8574535B2 (enExample)
EP (1) EP2125188B1 (enExample)
JP (1) JP5522606B2 (enExample)
CN (1) CN101657253B (enExample)
GB (1) GB0704516D0 (enExample)
WO (1) WO2008107860A2 (enExample)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0704516D0 (en) 2007-03-08 2007-04-18 Element Six Ltd Diamond
US20090260396A1 (en) * 2008-04-16 2009-10-22 Eitan Broukman Methods for processing ornamental diamonds and corresponding ornamental diamonds
GB0900771D0 (en) 2009-01-16 2009-03-04 Element Six Ltd Diamond
US20100272627A1 (en) * 2009-04-23 2010-10-28 Chien-Min Sung Multi-Faceted Diamond and Associated Methods
GB201107730D0 (en) * 2011-05-10 2011-06-22 Element Six Ltd Diamond sensors, detectors and quantum devices
CN104160061B (zh) * 2011-12-16 2017-10-10 六号元素技术有限公司 大面积光学质量合成多晶金刚石窗户
KR101299136B1 (ko) * 2012-02-08 2013-08-22 한국과학기술연구원 다이아몬드 열방산체 및 그 제조방법
GB201204533D0 (en) * 2012-03-15 2012-04-25 Element Six Ltd Process for manufacturing synthetic single crystal diamond material
GB201320304D0 (en) * 2013-11-18 2014-01-01 Element Six Ltd Methods of fabricating synthetic diamond materials using microwave plasma actived chemical vapour deposition techniques and products obtained using said
US10241158B2 (en) 2015-02-04 2019-03-26 Lockheed Martin Corporation Apparatus and method for estimating absolute axes' orientations for a magnetic detection system
US10120039B2 (en) 2015-11-20 2018-11-06 Lockheed Martin Corporation Apparatus and method for closed loop processing for a magnetic detection system
US10088336B2 (en) 2016-01-21 2018-10-02 Lockheed Martin Corporation Diamond nitrogen vacancy sensed ferro-fluid hydrophone
US10520558B2 (en) 2016-01-21 2019-12-31 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with nitrogen-vacancy center diamond located between dual RF sources
US20160216304A1 (en) 2015-01-28 2016-07-28 Lockheed Martin Corporation Rapid high-resolution magnetic field measurements for power line inspection
US9853837B2 (en) 2014-04-07 2017-12-26 Lockheed Martin Corporation High bit-rate magnetic communication
US9910105B2 (en) 2014-03-20 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
US10168393B2 (en) 2014-09-25 2019-01-01 Lockheed Martin Corporation Micro-vacancy center device
US9638821B2 (en) 2014-03-20 2017-05-02 Lockheed Martin Corporation Mapping and monitoring of hydraulic fractures using vector magnetometers
US9910104B2 (en) 2015-01-23 2018-03-06 Lockheed Martin Corporation DNV magnetic field detector
CA2945016A1 (en) 2014-04-07 2015-10-15 Lockheed Martin Corporation Energy efficient controlled magnetic field generator circuit
WO2016054815A1 (zh) * 2014-10-11 2016-04-14 河南飞孟金刚石工业有限公司 一种表面粗糙金刚石的合成方法
KR20170108055A (ko) 2015-01-23 2017-09-26 록히드 마틴 코포레이션 자기 검출 시스템에서의 고감도 자력 측정 및 신호 처리를 위한 장치 및 방법
WO2016190909A2 (en) 2015-01-28 2016-12-01 Lockheed Martin Corporation Magnetic navigation methods and systems utilizing power grid and communication network
GB2551090A (en) 2015-02-04 2017-12-06 Lockheed Corp Apparatus and method for recovery of three dimensional magnetic field from a magnetic detection system
CN105327654A (zh) * 2015-10-23 2016-02-17 重庆天宇弘锋新材料科技有限责任公司 一种生命钻石的制备工艺
EP3371614A1 (en) 2015-11-04 2018-09-12 Lockheed Martin Corporation Magnetic band-pass filter
WO2017087014A1 (en) 2015-11-20 2017-05-26 Lockheed Martin Corporation Apparatus and method for hypersensitivity detection of magnetic field
WO2017095454A1 (en) 2015-12-01 2017-06-08 Lockheed Martin Corporation Communication via a magnio
WO2017123261A1 (en) 2016-01-12 2017-07-20 Lockheed Martin Corporation Defect detector for conductive materials
WO2017127090A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Higher magnetic sensitivity through fluorescence manipulation by phonon spectrum control
GB2562957A (en) 2016-01-21 2018-11-28 Lockheed Corp Magnetometer with light pipe
WO2017127081A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with circuitry on diamond
WO2017127079A1 (en) 2016-01-21 2017-07-27 Lockheed Martin Corporation Ac vector magnetic anomaly detection with diamond nitrogen vacancies
GB2562958A (en) 2016-01-21 2018-11-28 Lockheed Corp Magnetometer with a light emitting diode
AU2016388316A1 (en) 2016-01-21 2018-09-06 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with common RF and magnetic fields generator
US10317279B2 (en) 2016-05-31 2019-06-11 Lockheed Martin Corporation Optical filtration system for diamond material with nitrogen vacancy centers
US10228429B2 (en) 2017-03-24 2019-03-12 Lockheed Martin Corporation Apparatus and method for resonance magneto-optical defect center material pulsed mode referencing
US20170343621A1 (en) 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-optical defect center magnetometer
US10527746B2 (en) 2016-05-31 2020-01-07 Lockheed Martin Corporation Array of UAVS with magnetometers
US10408890B2 (en) 2017-03-24 2019-09-10 Lockheed Martin Corporation Pulsed RF methods for optimization of CW measurements
US10274550B2 (en) 2017-03-24 2019-04-30 Lockheed Martin Corporation High speed sequential cancellation for pulsed mode
US10571530B2 (en) 2016-05-31 2020-02-25 Lockheed Martin Corporation Buoy array of magnetometers
US10145910B2 (en) 2017-03-24 2018-12-04 Lockheed Martin Corporation Photodetector circuit saturation mitigation for magneto-optical high intensity pulses
US10359479B2 (en) 2017-02-20 2019-07-23 Lockheed Martin Corporation Efficient thermal drift compensation in DNV vector magnetometry
US10338163B2 (en) 2016-07-11 2019-07-02 Lockheed Martin Corporation Multi-frequency excitation schemes for high sensitivity magnetometry measurement with drift error compensation
US10345396B2 (en) 2016-05-31 2019-07-09 Lockheed Martin Corporation Selected volume continuous illumination magnetometer
US10677953B2 (en) 2016-05-31 2020-06-09 Lockheed Martin Corporation Magneto-optical detecting apparatus and methods
US10345395B2 (en) 2016-12-12 2019-07-09 Lockheed Martin Corporation Vector magnetometry localization of subsurface liquids
US10330744B2 (en) 2017-03-24 2019-06-25 Lockheed Martin Corporation Magnetometer with a waveguide
US10281550B2 (en) 2016-11-14 2019-05-07 Lockheed Martin Corporation Spin relaxometry based molecular sequencing
US10371765B2 (en) 2016-07-11 2019-08-06 Lockheed Martin Corporation Geolocation of magnetic sources using vector magnetometer sensors
GB201620413D0 (en) * 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
US10371760B2 (en) 2017-03-24 2019-08-06 Lockheed Martin Corporation Standing-wave radio frequency exciter
US10379174B2 (en) 2017-03-24 2019-08-13 Lockheed Martin Corporation Bias magnet array for magnetometer
US10338164B2 (en) 2017-03-24 2019-07-02 Lockheed Martin Corporation Vacancy center material with highly efficient RF excitation
US10459041B2 (en) 2017-03-24 2019-10-29 Lockheed Martin Corporation Magnetic detection system with highly integrated diamond nitrogen vacancy sensor
CN107675249B (zh) * 2017-09-08 2020-07-07 西安电子科技大学 单晶金刚石的扩径生长方法
GB202305972D0 (en) * 2023-04-24 2023-06-07 Element Six Tech Ltd Method of manufacturing single crystal diamonds
WO2025182850A1 (ja) * 2024-02-28 2025-09-04 住友電気工業株式会社 ダイヤモンドスピンセンサおよびその製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034066A (en) 1973-11-02 1977-07-05 General Electric Company Method and high pressure reaction vessel for quality control of diamond growth on diamond seed
US4544540A (en) * 1982-06-25 1985-10-01 Sumitomo Electric Industries, Ltd. Diamond single crystals, a process of manufacturing and tools for using same
US4617181A (en) 1983-07-01 1986-10-14 Sumitomo Electric Industries, Ltd. Synthetic diamond heat sink
JPH0779958B2 (ja) 1987-05-08 1995-08-30 住友電気工業株式会社 大型ダイヤモンドの合成方法
JP2932559B2 (ja) * 1990-01-19 1999-08-09 住友電気工業株式会社 大型ダイヤモンド単結晶の合成方法
AU4245693A (en) 1992-05-04 1993-11-29 Case Western Reserve University Growth of diamond crystals
US5474021A (en) 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
EP0780153B1 (en) * 1995-12-21 2003-08-27 Element Six (PTY) Ltd Diamond synthesis
ES2184249T3 (es) * 1997-04-17 2003-04-01 De Beers Ind Diamond Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante.
JP4032482B2 (ja) 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
EP1671726B1 (en) 2003-10-10 2013-02-13 Sumitomo Electric Industries, Ltd. Diamond tool
US7128547B2 (en) * 2004-01-13 2006-10-31 Chien-Min Sung High pressure split die and associated methods
TW200631894A (en) 2004-12-09 2006-09-16 Element Six Technologies Pty Ltd A method of improving the crystalline perfection of diamond crystals
JP5002982B2 (ja) 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JP4613314B2 (ja) 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
CA2608548A1 (en) * 2005-06-17 2006-12-21 Sumitomo Electric Industries, Ltd. Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
EP1957689B1 (en) 2005-12-09 2011-04-20 Element Six Technologies (PTY) LTD High crystalline quality synthetic diamond
GB0704516D0 (en) 2007-03-08 2007-04-18 Element Six Ltd Diamond
GB0900771D0 (en) * 2009-01-16 2009-03-04 Element Six Ltd Diamond

Also Published As

Publication number Publication date
JP5522606B2 (ja) 2014-06-18
EP2125188A2 (en) 2009-12-02
WO2008107860A2 (en) 2008-09-12
US20100119790A1 (en) 2010-05-13
US20140020620A1 (en) 2014-01-23
WO2008107860A3 (en) 2008-10-30
JP2010520146A (ja) 2010-06-10
CN101657253B (zh) 2013-01-23
EP2125188B1 (en) 2017-11-15
US9034296B2 (en) 2015-05-19
CN101657253A (zh) 2010-02-24
US8574535B2 (en) 2013-11-05

Similar Documents

Publication Publication Date Title
GB0704516D0 (en) Diamond
MY143659A (en) High activity zsm-48 and methods for dewaxing
MY159243A (en) Single crystal diamond material
MX2009007990A (es) Linea de lechuga p2428-5006090.
WO2008060673A3 (en) Synthesis of pure nanotubes from nanotubes
AU2006217568A8 (en) Enhanced fertilizer and method for producing same
WO2005007935A3 (en) Tough diamonds and method of making thereof
TW200716512A (en) Processes for preparing cinacalcet hydrochloride crystal form I
TW200734050A (en) High activity ZSM-48 and methods for dewaxing
UA89830C2 (ru) Кристаллическая модификация iv пираклостробина, способы ее получения, композиция для защиты растений и применение
EP1931818A4 (en) METHOD FOR THE EPITACTIC GROWTH OF SILICON CARBIDE
UA93531C2 (en) Novel hydrogen sulfate salt
ATE524578T1 (de) Verfahren zur herstellung eines sic-einkristalls
TW200833884A (en) Method for producing self-supporting nitride semiconductor substrate and self-supporting nitride semiconductor substrate
WO2014090814A3 (en) Diamond grains, method for making same and mixture comprising same
MX2010004578A (es) Mejoras de crecimiento de plantas.
JP2013212952A5 (enExample)
TW200733881A (en) Use of prolines for improving growth and/or yield
WO2007059251A3 (en) New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate
WO2007059416A3 (en) Unseeded silicon carbide single crystals
EP1867760A3 (en) Method for manufacturing diamond single crystal substrate, and diamond single crystal substrate
TW200720366A (en) Process for preparing metal compounds of an azo compound in the presence of seed crystals
TW200631894A (en) A method of improving the crystalline perfection of diamond crystals
WO2008122396A3 (en) Method of improving the growth of a plant
EP1895026A4 (en) METHOD FOR PULLING A SILICON CRYSTAL AND THEN RENEWED SILICON INGREDIENT

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)