GB0124715D0 - Semiconductor laser diodes - Google Patents

Semiconductor laser diodes

Info

Publication number
GB0124715D0
GB0124715D0 GBGB0124715.4A GB0124715A GB0124715D0 GB 0124715 D0 GB0124715 D0 GB 0124715D0 GB 0124715 A GB0124715 A GB 0124715A GB 0124715 D0 GB0124715 D0 GB 0124715D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser diodes
diodes
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0124715.4A
Other versions
GB2384617B (en
GB2384617A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ARIMA OPTOELECTRONIC UK Ltd
Original Assignee
ARIMA OPTOELECTRONIC UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ARIMA OPTOELECTRONIC UK Ltd filed Critical ARIMA OPTOELECTRONIC UK Ltd
Priority to GB0124715A priority Critical patent/GB2384617B/en
Publication of GB0124715D0 publication Critical patent/GB0124715D0/en
Publication of GB2384617A publication Critical patent/GB2384617A/en
Application granted granted Critical
Publication of GB2384617B publication Critical patent/GB2384617B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/58—Turn-sensitive devices without moving masses
    • G01C19/64—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams
    • G01C19/72—Gyrometers using the Sagnac effect, i.e. rotation-induced shifts between counter-rotating electromagnetic beams with counter-rotating light beams in a passive ring, e.g. fibre laser gyrometers
    • G01C19/721—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
GB0124715A 2001-10-15 2001-10-15 Semiconductor laser diodes Expired - Fee Related GB2384617B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0124715A GB2384617B (en) 2001-10-15 2001-10-15 Semiconductor laser diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0124715A GB2384617B (en) 2001-10-15 2001-10-15 Semiconductor laser diodes

Publications (3)

Publication Number Publication Date
GB0124715D0 true GB0124715D0 (en) 2001-12-05
GB2384617A GB2384617A (en) 2003-07-30
GB2384617B GB2384617B (en) 2005-06-22

Family

ID=9923854

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0124715A Expired - Fee Related GB2384617B (en) 2001-10-15 2001-10-15 Semiconductor laser diodes

Country Status (1)

Country Link
GB (1) GB2384617B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11283244B2 (en) 2017-04-03 2022-03-22 Technion Research And Development Foundation, Ltd. Topological insulator laser system
CN107171179A (en) * 2017-07-13 2017-09-15 中国科学院半导体研究所 The serial semiconductor optical amplifier of multi-electrode

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7801181A (en) * 1978-02-02 1979-08-06 Philips Nv INJECTION LASER.
US4660275A (en) * 1984-08-29 1987-04-28 General Motors Corporation Method of making cleaved-coupled-cavity (C3) diode lasers
US4719630A (en) * 1986-03-24 1988-01-12 Xerox Corporation Phased array semiconductor lasers with uniform and stable supermode
JPS62229105A (en) * 1986-03-29 1987-10-07 Nippon Telegr & Teleph Corp <Ntt> Multi-wavelength semiconductor light source
US4818062A (en) * 1987-04-28 1989-04-04 Spectra Diode Laboratories, Inc. Optical system with bright light output
JP2692913B2 (en) * 1987-12-19 1997-12-17 株式会社東芝 Grating coupled surface emitting laser device and modulation method thereof
JP3314796B2 (en) * 1994-08-29 2002-08-12 日本電信電話株式会社 Optical waveguide integrated semiconductor laser and method of manufacturing the same
EP0977280A3 (en) * 1998-07-28 2008-11-26 Interuniversitair Micro-Elektronica Centrum Vzw Devices for emitting radiation with a high efficiency and a method for fabricating such devices
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
CN1267106A (en) * 1999-03-16 2000-09-20 中国科学院半导体研究所 Semiconductor laser device with equilateral-triangle resonance cavity
JP4250257B2 (en) * 1999-05-14 2009-04-08 キヤノン株式会社 Semiconductor near-field light source and manufacturing method thereof
US20010036009A1 (en) * 2000-02-17 2001-11-01 Xun Li Surface-emitting semiconductor optical amplifier
WO2001080385A1 (en) * 2000-04-17 2001-10-25 Institute Of Semiconductor Laser having equilateral triangular optical resonators of orienting output

Also Published As

Publication number Publication date
GB2384617B (en) 2005-06-22
GB2384617A (en) 2003-07-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20051015