NL7801181A - INJECTION LASER. - Google Patents
INJECTION LASER.Info
- Publication number
- NL7801181A NL7801181A NL7801181A NL7801181A NL7801181A NL 7801181 A NL7801181 A NL 7801181A NL 7801181 A NL7801181 A NL 7801181A NL 7801181 A NL7801181 A NL 7801181A NL 7801181 A NL7801181 A NL 7801181A
- Authority
- NL
- Netherlands
- Prior art keywords
- injection laser
- laser
- injection
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7801181A NL7801181A (en) | 1978-02-02 | 1978-02-02 | INJECTION LASER. |
US06/006,606 US4296386A (en) | 1978-02-02 | 1979-01-26 | Semiconductor injection laser having a movable laser beam |
EP79200052A EP0003626B1 (en) | 1978-02-02 | 1979-01-29 | Injection laser |
DE7979200052T DE2963047D1 (en) | 1978-02-02 | 1979-01-29 | Injection laser |
AU43779/79A AU4377979A (en) | 1978-02-02 | 1979-01-30 | Laser |
ES477344A ES477344A1 (en) | 1978-02-02 | 1979-01-31 | Injection laser. |
JP54010961A JPS5917995B2 (en) | 1978-02-02 | 1979-02-01 | injection laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7801181A NL7801181A (en) | 1978-02-02 | 1978-02-02 | INJECTION LASER. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7801181A true NL7801181A (en) | 1979-08-06 |
Family
ID=19830264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7801181A NL7801181A (en) | 1978-02-02 | 1978-02-02 | INJECTION LASER. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4296386A (en) |
EP (1) | EP0003626B1 (en) |
JP (1) | JPS5917995B2 (en) |
AU (1) | AU4377979A (en) |
DE (1) | DE2963047D1 (en) |
ES (1) | ES477344A1 (en) |
NL (1) | NL7801181A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4621964A (en) * | 1982-07-06 | 1986-11-11 | Plastic Specialties And Technologies, Inc. | Valve mounting assembly for aerosol containers and the like |
US4878222A (en) * | 1988-08-05 | 1989-10-31 | Eastman Kodak Company | Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot |
US6169757B1 (en) | 1997-09-26 | 2001-01-02 | Scott A. Merritt | Intermodal phase difference controller for beam angle modulation in index guided semiconductor devices |
GB2384617B (en) * | 2001-10-15 | 2005-06-22 | Arima Optoelectronic | Semiconductor laser diodes |
DE10312214B4 (en) * | 2003-03-19 | 2008-11-20 | Osram Opto Semiconductors Gmbh | Method for producing at least one mesa or web structure or at least one electrically pumped region in a layer or layer sequence |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3340479A (en) * | 1963-06-14 | 1967-09-05 | Bell Telephone Labor Inc | Laser tunable by junction coupling |
US3518574A (en) * | 1964-05-01 | 1970-06-30 | Ibm | Injection laser device |
US3402366A (en) * | 1965-02-26 | 1968-09-17 | Ibm | Beam scanning in injection lasers |
US3576586A (en) * | 1968-08-05 | 1971-04-27 | Bell & Howell Co | Variable area injection luminescent device |
US3701044A (en) * | 1970-06-29 | 1972-10-24 | Bell Telephone Labor Inc | Optical coupling of adjacent stripe contact geometry semiconductor lasers |
US3702975A (en) * | 1970-12-09 | 1972-11-14 | Bell Telephone Labor Inc | Low threshold stripe geometry injection laser |
US3978507A (en) * | 1972-07-13 | 1976-08-31 | U.S. Philips Corporation | Electroluminescent device having localized emission |
JPS52116185A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Mesa-type semiconductor laser |
-
1978
- 1978-02-02 NL NL7801181A patent/NL7801181A/en not_active Application Discontinuation
-
1979
- 1979-01-26 US US06/006,606 patent/US4296386A/en not_active Expired - Lifetime
- 1979-01-29 EP EP79200052A patent/EP0003626B1/en not_active Expired
- 1979-01-29 DE DE7979200052T patent/DE2963047D1/en not_active Expired
- 1979-01-30 AU AU43779/79A patent/AU4377979A/en not_active Abandoned
- 1979-01-31 ES ES477344A patent/ES477344A1/en not_active Expired
- 1979-02-01 JP JP54010961A patent/JPS5917995B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU4377979A (en) | 1979-08-09 |
EP0003626A1 (en) | 1979-08-22 |
ES477344A1 (en) | 1979-07-01 |
JPS5917995B2 (en) | 1984-04-24 |
US4296386A (en) | 1981-10-20 |
DE2963047D1 (en) | 1982-07-29 |
EP0003626B1 (en) | 1982-06-09 |
JPS54114095A (en) | 1979-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BV | The patent application has lapsed |