FR3131076B1 - Procede de formation d’un dispositif comprenant du graphene - Google Patents

Procede de formation d’un dispositif comprenant du graphene Download PDF

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Publication number
FR3131076B1
FR3131076B1 FR2114282A FR2114282A FR3131076B1 FR 3131076 B1 FR3131076 B1 FR 3131076B1 FR 2114282 A FR2114282 A FR 2114282A FR 2114282 A FR2114282 A FR 2114282A FR 3131076 B1 FR3131076 B1 FR 3131076B1
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France
Prior art keywords
graphene film
graphene
forming
substrate
functionalization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2114282A
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English (en)
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FR3131076A1 (fr
Inventor
Vincent Bouchiat
Behnaz Djoharian
Riadh Othmen
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Grapheal
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Grapheal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to FR2114282A priority Critical patent/FR3131076B1/fr
Priority to PCT/FR2022/052431 priority patent/WO2023118723A1/fr
Publication of FR3131076A1 publication Critical patent/FR3131076A1/fr
Application granted granted Critical
Publication of FR3131076B1 publication Critical patent/FR3131076B1/fr
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

L’invention concerne un procédé de formation d’un dispositif (5) comprenant du graphène, le procédé comprenant les étapes suivantes : - une étape S1 de formation d’un film de graphène (1) sur un substrat (2); - une étape S2 de dépôt sur le film de graphène (1) d’un matériau de fonctionnalisation (3) configuré pour modifier des propriétés physico chimiques du film de graphène (1), le dépôt de matériau de fonctionnalisation étant configuré pour couvrir partiellement le film de graphène (1) ; - une étape S3 de dépôt en phase gazeuse d’un matériau polymère (4) couvrant le film de graphène (1) et le matériau de fonctionnalisation (3) ; et - une étape S4 de retrait du substrat (2) de sorte que le matériau polymère (4) forme un support pour le film de graphène (1). Figure pour l’abrégé : Fig. 1
FR2114282A 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene Active FR3131076B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR2114282A FR3131076B1 (fr) 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene
PCT/FR2022/052431 WO2023118723A1 (fr) 2021-12-22 2022-12-20 Procédé de formation d'un dispositif comprenant du graphène

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2114282A FR3131076B1 (fr) 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene
FR2114282 2021-12-22

Publications (2)

Publication Number Publication Date
FR3131076A1 FR3131076A1 (fr) 2023-06-23
FR3131076B1 true FR3131076B1 (fr) 2024-04-19

Family

ID=81346407

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2114282A Active FR3131076B1 (fr) 2021-12-22 2021-12-22 Procede de formation d’un dispositif comprenant du graphene

Country Status (2)

Country Link
FR (1) FR3131076B1 (fr)
WO (1) WO2023118723A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3033554B1 (fr) 2015-03-09 2020-01-31 Centre National De La Recherche Scientifique Procede de formation d'un dispositif en graphene
WO2017062784A1 (fr) * 2015-10-07 2017-04-13 The Regents Of The University Of California Capteurs multimodaux à base de graphène
CN108101027B (zh) * 2017-12-29 2020-01-31 重庆墨希科技有限公司 大面积cvd石墨烯掺杂转移方法

Also Published As

Publication number Publication date
FR3131076A1 (fr) 2023-06-23
WO2023118723A1 (fr) 2023-06-29

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