US20230366095A1 - Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material - Google Patents
Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material Download PDFInfo
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- US20230366095A1 US20230366095A1 US18/247,095 US202118247095A US2023366095A1 US 20230366095 A1 US20230366095 A1 US 20230366095A1 US 202118247095 A US202118247095 A US 202118247095A US 2023366095 A1 US2023366095 A1 US 2023366095A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000151 deposition Methods 0.000 title claims description 51
- 239000000463 material Substances 0.000 title claims description 17
- 230000008021 deposition Effects 0.000 claims abstract description 46
- 238000006073 displacement reaction Methods 0.000 claims abstract description 19
- 238000011010 flushing procedure Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 description 68
- 239000007789 gas Substances 0.000 description 49
- 230000000694 effects Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Definitions
- the present disclosure relates to a method and device for depositing an epitaxial layer on a substrate wafer of semiconductor material.
- Deposition of the epitaxial layer on a substrate wafer of semiconductor material is conventionally carried out by means of chemical vapor deposition (CVD) in a deposition apparatus that can accommodate a substrate wafer.
- CVD chemical vapor deposition
- the substrate wafer rests on a susceptor which is held by a supporting shaft and is rotated, a deposition gas being passed over a free upper surface, the front side of the semiconductor wafer.
- the deposition apparatus conventionally also has a preheating ring, which is arranged around the susceptor while being separated by a gap.
- An upper dome and a lower dome define a reaction space, inside which the epitaxial layer is deposited on the substrate wafer. Radiant heat of banks of lamps is introduced through one or both domes in order to provide a required deposition temperature.
- a deposition apparatus having these features is described, for example in US 2016 0 010 239 A1.
- epitaxial wafers Semiconductor wafers with an epitaxial layer (epitaxial wafers) are required for particularly demanding applications in the electronics industry.
- the requirements relating to the uniformity of the thickness of such a semiconductor wafer are particularly challenging, for example.
- Irregularities in the thickness of the substrate wafer are generally preserved even after the deposition of the epitaxial layer, particularly if the epitaxial layer has a uniform thickness.
- approaches which have the purpose of improving the thickness uniformity by the deposition of the epitaxial layer are also approaches which have the purpose of improving the thickness uniformity by the deposition of the epitaxial layer.
- substrate wafers with a thickness distribution that is not rotationally symmetrical. They have a wedge-shaped cross section when the thickness decreases from one region of the circumference to the region of the circumference lying 180° opposite.
- the cross section from the thinner to the thicker region of such substrate wafers has the shape of a wedge with a thinner edge and a thicker edge.
- the deposition of an epitaxial layer with a rotationally symmetrical thickness distribution cannot eliminate the wedge-shaped structure.
- the present disclosure provides a method that deposits an epitaxial layer on a substrate wafer.
- the substrate wafer is made of semiconductor material and has a wedge-shaped cross section with a thinner edge and a thicker edge.
- the method includes: arranging the substrate wafer and a susceptor in a deposition apparatus so that the substrate wafer rests concentrically on the susceptor, and so that the susceptor is held by a supporting shaft; rotating the supporting shaft with a time period; passing deposition gas over the substrate wafer in a direction from a gas inlet to a gas outlet; passing flushing gas with a flow rate along a lower side of a preheating ring and a lower side of the susceptor; and displacing the supporting shaft with the time period along a displacement path in a direction starting from an initial position, in which the thinner edge has its smallest distance from the gas inlet, to a final position in which the thinner edge has its largest distance from the gas inlet, and back to the initial position.
- FIG. 1 shows an apparatus, which is configured to carry out the method according to an aspect of the present disclosure
- FIG. 2 shows further details of the apparatus of FIG. 1 ;
- FIG. 3 show the start and the end of the displacement of the supporting shaft in the course of a 180° rotation of the susceptor
- FIG. 4 shows, for comparison, the cross section of a wedge-shaped substrate wafer and that of a substrate wafer coated according to an aspect of the present disclosure.
- aspects of the present disclosure improve the uniformity of the thickness of semiconductor wafers with an epitaxial layer when the substrate wafer has a wedge-shaped cross section.
- An embodiment of the present disclosure provides a method for depositing an epitaxial layer on a substrate wafer of semiconductor material, which has a wedge-shaped cross section with a thinner and a thicker edge.
- the method includes:
- flushing gas sometimes enters through the gap between the preheating ring and the susceptor and dilutes the deposition gas, with the effect that the rate of the material deposition decreases.
- the effect increases with the width of the gap, and this discovery is used according to aspects of the present disclosure.
- the width of the gap is periodically increased with the distance of the thinner edge from the gas inlet, and the time period is synchronized with the duration of a rotation of the susceptor, specifically in such a way that the thinner edge of the substrate wafer has the smallest distance from the gas inlet at the start of the period.
- the dilution effect is the least and the rate of the material deposition is relatively high.
- One half of a revolution of the susceptor later, when the thicker edge has the smallest distance from the gas inlet, the gap at this position is relatively large, the dilution effect is relatively pronounced and the material deposition is relatively low.
- the epitaxial layer deposited on the substrate wafer has a thickness distribution which also has a wedge-shaped cross section.
- the latter is complementary to that of the cross section of the substrate wafer, however, so that the wedge shape of the semiconductor wafer with an epitaxially deposited layer is at least less pronounced than that of the substrate wafer.
- the method implemented according to an aspect of the present disclosure is also suitable for converting a substrate wafer with a wedge-like shape into a semiconductor wafer that has an epitaxial layer and a shape which corresponds to that of a wafer with an approximately plane-parallel front side and back side.
- the substrate wafer has a wedge-shaped cross section in the sense of the present disclosure when the edges of the cross section have different thicknesses.
- a constant increase in the thickness from the thinner edge to the thicker edge is preferred, but not necessary.
- the substrate wafer is placed on a susceptor.
- the susceptor has a circular outer circumference in plan view, and preferably has a pocket and a bearing surface, on which the substrate wafer rests in the edge region of its back side.
- the substrate wafer lies concentrically with the outer circumference of the susceptor, and preferably rests on its bearing surface in such a way that there is a distance between the back side of the substrate wafer and a bottom delimiting the pocket.
- Holes may be formed in the bottom of the pocket in order to facilitate the transport of dopants from the back side of the substrate wafer into the reaction space below the susceptor. Instead of the holes, the bottom may consist of a material containing fibers and ensure the transport of dopants because of the porosity of the material.
- the supporting shaft by means of which the susceptor is held, is periodically displaced from an initial position to a final position and back to the initial position.
- the displacement of the supporting shaft is carried out by means of at least one actuator, for example via one or more piezoelectric adjusting elements.
- the displacement path between the initial position and the final position runs along a direction between the gas inlet and the gas outlet.
- the thinner edge of the cross section of the substrate has the smallest distance from the gas inlet in the initial position and the largest distance from the gas inlet in the final position.
- the length of the displacement path from the initial position to the final position is preferably not less than 30% and not more than 130% of the gap width that exists when the outer circumference of the susceptor and the inner circumference of the preheating ring are arranged concentrically.
- the length of the displacement path is preferably proportional to the difference of the thicknesses at the thicker edge and at the thinner edge of the cross section.
- the susceptor is rotated with a rotational speed of preferably from 30 rpm to 60 rpm. With such a rotational speed, the time period of the displacement movement of the susceptor is from 1 s to 2 s.
- the shape of the substrate wafer is measured before the deposition of the epitaxial layer and process parameters of the deposition, such as the speed of the displacement movement and the flow rate of the flushing gas, are adapted to the shape.
- the speed of the displacement movement may be substantially constant or varied in accordance with the profile of the thickness change along the circumference of the substrate wafer.
- the flow rate of the flushing gas which jointly determines the radial range of the effect associated with the dilution of the deposition gas, is preferably not less than 5 standard liters per minute (slm) and not more than 30 slm. It may be constant or varied in accordance with the profile of the thickness change along the circumference of the substrate wafer.
- the substrate wafer consists of semiconductor material, preferably monocrystalline silicon, as well as the epitaxial layer which is deposited on the front side of the substrate wafer.
- the diameter of the substrate wafer is preferably at least 200 mm, particularly preferably at least 300 mm.
- the deposition gas contains a compound, for example silane or a chlorosilane, for example trichlorosilane, that contains the semiconductor material, and the flushing gas preferably contains hydrogen.
- the periodic displacement, according to an aspect of the present disclosure, of the supporting shaft need not be carried out continuously during the deposition of the epitaxial layer. It may also be carried out only temporarily.
- the epitaxial layer is deposited up to a particular layer thickness without the supporting shaft being periodically displaced, and then the deposition of the epitaxial layer is continued while the supporting shaft is displaced according to the an aspect of the present disclosure.
- This procedure may also be modified in such a way that the epitaxial layer is initially deposited while the supporting shaft is periodically displaced, and the deposition of the epitaxial layer is thereupon continued without the supporting shaft being displaced. Carrying out one of these embodiments is particularly expedient when the wedge shape of the substrate wafer is relatively weakly pronounced.
- An aspect of the present disclosure further provides an apparatus for depositing an epitaxial layer on a substrate wafer of semiconductor material.
- the apparatus includes:
- the apparatus also comprises at least one actuator for tilting of the supporting shaft. After the tilting of the supporting shaft, the rotation axis of the supporting shaft is no longer vertical but is tilted toward the preheating ring.
- FIG. 1 shows an apparatus for depositing an epitaxial layer on a substrate wafer of semiconductor material, which is configured to carry out a method according to an aspect of the present disclosure.
- FIG. 1 is provided in a sectional representation.
- the reaction space of this deposition apparatus 20 is delimited at the top by an upper dome 17 and at the bottom by a lower dome 18 .
- a supporting shaft 9 from which supporting arms 10 branch off at an upper and, protrudes into the middle of the reaction space.
- the supporting arms 10 support a susceptor 2 , on which a substrate wafer 1 rests during the deposition of an epitaxial layer.
- provision is made in the course of loading the deposition apparatus 20 for the substrate wafer 1 to be placed on a lifting shaft 11 and placed on the susceptor 2 by lowering the lifting shaft 11 .
- a preheating ring 3 is arranged between the side wall of the deposition apparatus and the susceptor 2 .
- the deposition gas is passed over a front side of the substrate wafer, facing toward the upper dome 17 , from a gas inlet 15 a to a gas outlet 16 a , which are arranged at a side wall of the deposition apparatus. Furthermore provided are also a corresponding gas inlet 15 b and gas outlet 16 b for flushing gas, which is passed through the reaction space below the preheating ring 3 and the susceptor 2 . Arrows indicate the flow direction of the gas streams. Depending on the width of a gap 5 between the preheating ring and the susceptor, a part of the flushing gas enters the stream of the deposition gas and dilutes the deposition gas.
- the reaction space is heated from the outside by banks of lamps 19 , which introduce radiant energy through the upper and lower domes 17 and 18 .
- the lower dome 18 of the deposition apparatus 20 is connected to the base 12 by a bellows 25 , in order to permit the movement of the supporting shaft 9 and in order to seal the internal space thereby provided against ambient atmosphere flowing in.
- a particular feature of the apparatus is a control device 21 , which is configured to displace the supporting shaft 9 periodically by means of at least one actuator 13 along a direction from the gas inlet 15 a , 15 b to the gas outlet 16 a , 16 b .
- the embodiment shown has two actuators 13 and 14 which, with the same type of activation, displace the supporting shaft 9 .
- tilting of the supporting shaft 9 is also possible when the activation is different. During tilting, the rotation axis 22 of the supporting shaft 9 is inclined from the vertical toward the preheating ring 3 .
- the additional tilting of the supporting shaft 9 may, for example, be useful in order to bring the substrate wafer 1 into a horizontal position if it is not resting horizontally on the susceptor 2 as intended.
- the camera system 7 shown in FIG. 2 comprises a camera for the observation of an image section 6 during the rotation of the susceptor 2 by means of the supporting shaft 9 .
- the image section 6 acquires a radially extending region which preferably includes a section of the outer circumference of the substrate wafer 1 , a section of the outer circumference of the susceptor 2 and a section of the inner circumference of the preheating ring 3 , and therefore also a section of the gap 5 between the susceptor 2 and the preheating ring 3 .
- the substrate wafer 1 rests in a pocket of the susceptor 2 on a bearing surface 4 , so that the back side 23 of the substrate wafer 1 has a distance from the bottom 24 of the susceptor 2 .
- the information contained in the image section 6 is evaluated by means of the image processing 8 , particularly in relation to the width of the gap 5 and the distance of the camera system 7 from the susceptor 2 .
- control device 21 By means of the control device 21 , a check is made as to whether there is an incorrect arrangement of the susceptor 2 , and if appropriate a signal is generated which tilts the supporting shaft 9 to such an extent that the substrate wafer moves from the incorrect arrangement into the intended horizontal position.
- the supporting shaft is periodically displaced along a displacement path from an initial position to a final position and back to the initial position.
- the start (above) and the end (below) of such a movement as far as the final position of the supporting shaft 9 are outlined in FIG. 3 .
- the substrate wafer 1 rests centrally on the bearing surface of the susceptor 2 . It has a wedge-shaped cross section with a thinner edge 26 and a thicker edge 27 . In the course of a rotation of the susceptor 1 , the thinner edge has the smallest distance from the gas inlet 15 a,b in the initial position of the supporting shaft 9 and the largest distance from the gas inlet 15 a,b in the final position of the supporting shaft 9 .
- the gap 5 between the preheating ring 3 and the susceptor 2 is smaller on the side of the gas inlet 15 a,b in the initial position of the supporting shaft 9 , and the effect of dilution by flushing gas which enters the space above the susceptor along the arrow shown as a divided arrow is less.
- the gap 5 is larger and so is the dilution effect. This means that more material is deposited overall in the region of the thinner edge 26 than in the region of the thicker edge 27 of the substrate wafer 1 .
- FIG. 4 represents the way in which the cross section of the substrate wafer with a deposited epitaxial layer (below) changes in comparison with the cross section of the substrate wafer (above).
- the epitaxial layer 28 likewise has a wedge-shaped cross section, but one which is complementary to that of the substrate wafer 1 so that the coated substrate wafer in the ideal case has plane-parallel side surfaces.
- the recitation of “at least one of A, B and C” should be interpreted as one or more of a group of elements consisting of A, B and C, and should not be interpreted as requiring at least one of each of the listed elements A, B and C, regardless of whether A, B and C are related as categories or otherwise.
- the recitation of “A, B and/or C” or “at least one of A, B or C” should be interpreted as including any singular entity from the listed elements, e.g., A, any subset from the listed elements, e.g., A and B, or the entire list of elements A, B and C.
Abstract
A method deposits an epitaxial layer on a semiconductor substrate having a wedge-shaped cross section. The substrate is arranged in a deposition apparatus to rest concentrically on a susceptor held by a supporting shaft. The supporting shaft rotates with a time period. Deposition gas is passed over the substrate between a gas inlet and outlet. Flushing gas is passed along a lower side of a preheating ring and of the susceptor. The supporting shaft is displaced with the time period along a displacement path from a position where a thinner edge of the substrate has its smallest distance from the gas inlet, to where the thinner edge has its largest distance therefrom, and back.
Description
- This application is a U.S. National Phase application under 35 U.S.C. § 371 of International Application No. PCT/EP2021/075795, filed on Sep. 20, 2021, and claims benefit to European Patent Application No. EP 20199291.4, filed on Sep. 30, 2020. The International Application was published in German on Apr. 7, 2022 as WO 2022/069283 A1 under PCT Article 21(2).
- The present disclosure relates to a method and device for depositing an epitaxial layer on a substrate wafer of semiconductor material.
- Deposition of the epitaxial layer on a substrate wafer of semiconductor material is conventionally carried out by means of chemical vapor deposition (CVD) in a deposition apparatus that can accommodate a substrate wafer. During the deposition of the epitaxial layer, the substrate wafer rests on a susceptor which is held by a supporting shaft and is rotated, a deposition gas being passed over a free upper surface, the front side of the semiconductor wafer. The deposition apparatus conventionally also has a preheating ring, which is arranged around the susceptor while being separated by a gap. An upper dome and a lower dome define a reaction space, inside which the epitaxial layer is deposited on the substrate wafer. Radiant heat of banks of lamps is introduced through one or both domes in order to provide a required deposition temperature. A deposition apparatus having these features is described, for example in US 2016 0 010 239 A1.
- Semiconductor wafers with an epitaxial layer (epitaxial wafers) are required for particularly demanding applications in the electronics industry. Correspondingly, the requirements relating to the uniformity of the thickness of such a semiconductor wafer are particularly challenging, for example.
- Irregularities in the thickness of the substrate wafer are generally preserved even after the deposition of the epitaxial layer, particularly if the epitaxial layer has a uniform thickness. There are, however, also approaches which have the purpose of improving the thickness uniformity by the deposition of the epitaxial layer.
- DE 11 2018 001 223 T5 discloses that a flushing gas, which is passed through the deposition apparatus along a lower side of the preheating ring and a lower side of the susceptor, influences the thickness of the epitaxial layer as well as the width of the gap between the preheating ring and the susceptor.
- In US 2009 0 269 861 A1, it is proposed to select the process conditions during the deposition of the epitaxial layer as a function of the planarity of the substrate wafer. Similar proposals are made in WO 2018 117 402 A2 and in JP 2002 43 230 A.
- A common feature of these proposals is that they use an effect which occurs as a result of the rotation of the substrate wafer during the deposition of the epitaxial layer: a change of process conditions causes a rotationally symmetrical change of the thickness distribution of the epitaxial layer. These proposals are therefore suitable only for substrate wafers in which the irregularity of the thickness is distributed rotationally symmetrically.
- There are, however, also substrate wafers with a thickness distribution that is not rotationally symmetrical. They have a wedge-shaped cross section when the thickness decreases from one region of the circumference to the region of the circumference lying 180° opposite. The cross section from the thinner to the thicker region of such substrate wafers has the shape of a wedge with a thinner edge and a thicker edge. The deposition of an epitaxial layer with a rotationally symmetrical thickness distribution cannot eliminate the wedge-shaped structure.
- In an embodiment, the present disclosure provides a method that deposits an epitaxial layer on a substrate wafer. The substrate wafer is made of semiconductor material and has a wedge-shaped cross section with a thinner edge and a thicker edge. The method includes: arranging the substrate wafer and a susceptor in a deposition apparatus so that the substrate wafer rests concentrically on the susceptor, and so that the susceptor is held by a supporting shaft; rotating the supporting shaft with a time period; passing deposition gas over the substrate wafer in a direction from a gas inlet to a gas outlet; passing flushing gas with a flow rate along a lower side of a preheating ring and a lower side of the susceptor; and displacing the supporting shaft with the time period along a displacement path in a direction starting from an initial position, in which the thinner edge has its smallest distance from the gas inlet, to a final position in which the thinner edge has its largest distance from the gas inlet, and back to the initial position.
- Subject matter of the present disclosure will be described in even greater detail below based on the exemplary figures. All features described and/or illustrated herein can be used alone or combined in different combinations. The features and advantages of various embodiments will become apparent by reading the following detailed description with reference to the attached drawings, which illustrate the following:
-
FIG. 1 shows an apparatus, which is configured to carry out the method according to an aspect of the present disclosure; -
FIG. 2 shows further details of the apparatus ofFIG. 1 ; -
FIG. 3 show the start and the end of the displacement of the supporting shaft in the course of a 180° rotation of the susceptor; and -
FIG. 4 shows, for comparison, the cross section of a wedge-shaped substrate wafer and that of a substrate wafer coated according to an aspect of the present disclosure. - Aspects of the present disclosure improve the uniformity of the thickness of semiconductor wafers with an epitaxial layer when the substrate wafer has a wedge-shaped cross section.
- An embodiment of the present disclosure provides a method for depositing an epitaxial layer on a substrate wafer of semiconductor material, which has a wedge-shaped cross section with a thinner and a thicker edge. The method includes:
-
- arranging of the substrate wafer and of a susceptor in a deposition apparatus so that the substrate wafer rests concentrically on the susceptor and the susceptor is held by a supporting shaft; rotating of the supporting shaft with a time period;
- passing of deposition gas over the substrate wafer in a direction from a gas inlet to a gas outlet;
- passing of flushing gas with a flow rate along a lower side of a preheating ring and a lower side of the susceptor; and
- displacing of the supporting shaft with the time period along a displacement path in the direction starting from an initial position, in which the thinner edge has a smallest distance from the gas inlet, to a final position in which the thinner edge has a largest distance from the gas inlet, and back to the initial position.
- It is observed that flushing gas sometimes enters through the gap between the preheating ring and the susceptor and dilutes the deposition gas, with the effect that the rate of the material deposition decreases. The effect increases with the width of the gap, and this discovery is used according to aspects of the present disclosure.
- The width of the gap is periodically increased with the distance of the thinner edge from the gas inlet, and the time period is synchronized with the duration of a rotation of the susceptor, specifically in such a way that the thinner edge of the substrate wafer has the smallest distance from the gas inlet at the start of the period. At this time, the dilution effect is the least and the rate of the material deposition is relatively high. One half of a revolution of the susceptor later, when the thicker edge has the smallest distance from the gas inlet, the gap at this position is relatively large, the dilution effect is relatively pronounced and the material deposition is relatively low. Owing to the procedure according to an aspect of the present disclosure, the epitaxial layer deposited on the substrate wafer has a thickness distribution which also has a wedge-shaped cross section. The latter is complementary to that of the cross section of the substrate wafer, however, so that the wedge shape of the semiconductor wafer with an epitaxially deposited layer is at least less pronounced than that of the substrate wafer. The method implemented according to an aspect of the present disclosure is also suitable for converting a substrate wafer with a wedge-like shape into a semiconductor wafer that has an epitaxial layer and a shape which corresponds to that of a wafer with an approximately plane-parallel front side and back side.
- The substrate wafer has a wedge-shaped cross section in the sense of the present disclosure when the edges of the cross section have different thicknesses. A constant increase in the thickness from the thinner edge to the thicker edge is preferred, but not necessary.
- The substrate wafer is placed on a susceptor. The susceptor has a circular outer circumference in plan view, and preferably has a pocket and a bearing surface, on which the substrate wafer rests in the edge region of its back side. The substrate wafer lies concentrically with the outer circumference of the susceptor, and preferably rests on its bearing surface in such a way that there is a distance between the back side of the substrate wafer and a bottom delimiting the pocket. Holes may be formed in the bottom of the pocket in order to facilitate the transport of dopants from the back side of the substrate wafer into the reaction space below the susceptor. Instead of the holes, the bottom may consist of a material containing fibers and ensure the transport of dopants because of the porosity of the material.
- In order to achieve variation of the width of the gap between the preheating ring and the susceptor in the intended way during the deposition of the epitaxial layer, the supporting shaft, by means of which the susceptor is held, is periodically displaced from an initial position to a final position and back to the initial position. The displacement of the supporting shaft is carried out by means of at least one actuator, for example via one or more piezoelectric adjusting elements. The displacement path between the initial position and the final position runs along a direction between the gas inlet and the gas outlet. As observed over the duration of a revolution of the susceptor, the thinner edge of the cross section of the substrate has the smallest distance from the gas inlet in the initial position and the largest distance from the gas inlet in the final position.
- The length of the displacement path from the initial position to the final position is preferably not less than 30% and not more than 130% of the gap width that exists when the outer circumference of the susceptor and the inner circumference of the preheating ring are arranged concentrically. The length of the displacement path is preferably proportional to the difference of the thicknesses at the thicker edge and at the thinner edge of the cross section.
- The susceptor is rotated with a rotational speed of preferably from 30 rpm to 60 rpm. With such a rotational speed, the time period of the displacement movement of the susceptor is from 1 s to 2 s.
- Preferably, the shape of the substrate wafer is measured before the deposition of the epitaxial layer and process parameters of the deposition, such as the speed of the displacement movement and the flow rate of the flushing gas, are adapted to the shape.
- The speed of the displacement movement may be substantially constant or varied in accordance with the profile of the thickness change along the circumference of the substrate wafer.
- The flow rate of the flushing gas, which jointly determines the radial range of the effect associated with the dilution of the deposition gas, is preferably not less than 5 standard liters per minute (slm) and not more than 30 slm. It may be constant or varied in accordance with the profile of the thickness change along the circumference of the substrate wafer.
- The substrate wafer consists of semiconductor material, preferably monocrystalline silicon, as well as the epitaxial layer which is deposited on the front side of the substrate wafer. The diameter of the substrate wafer is preferably at least 200 mm, particularly preferably at least 300 mm.
- The deposition gas contains a compound, for example silane or a chlorosilane, for example trichlorosilane, that contains the semiconductor material, and the flushing gas preferably contains hydrogen.
- The periodic displacement, according to an aspect of the present disclosure, of the supporting shaft need not be carried out continuously during the deposition of the epitaxial layer. It may also be carried out only temporarily. Thus, according to a further embodiment of the present disclosure, the epitaxial layer is deposited up to a particular layer thickness without the supporting shaft being periodically displaced, and then the deposition of the epitaxial layer is continued while the supporting shaft is displaced according to the an aspect of the present disclosure. This procedure may also be modified in such a way that the epitaxial layer is initially deposited while the supporting shaft is periodically displaced, and the deposition of the epitaxial layer is thereupon continued without the supporting shaft being displaced. Carrying out one of these embodiments is particularly expedient when the wedge shape of the substrate wafer is relatively weakly pronounced.
- An aspect of the present disclosure further provides an apparatus for depositing an epitaxial layer on a substrate wafer of semiconductor material. The apparatus includes:
-
- a susceptor,
- a preheating ring,
- a supporting shaft,
- at least one actuator for displacement of the supporting shaft, and
- a control device configured for periodic displacement of the supporting shaft by means of the actuator along a direction from a gas inlet to a gas outlet.
- According to one preferred embodiment, the apparatus also comprises at least one actuator for tilting of the supporting shaft. After the tilting of the supporting shaft, the rotation axis of the supporting shaft is no longer vertical but is tilted toward the preheating ring.
-
FIG. 1 shows an apparatus for depositing an epitaxial layer on a substrate wafer of semiconductor material, which is configured to carry out a method according to an aspect of the present disclosure.FIG. 1 is provided in a sectional representation. - The reaction space of this
deposition apparatus 20 is delimited at the top by an upper dome 17 and at the bottom by alower dome 18. A supporting shaft 9, from which supporting arms 10 branch off at an upper and, protrudes into the middle of the reaction space. The supporting arms 10 support a susceptor 2, on which asubstrate wafer 1 rests during the deposition of an epitaxial layer. In the embodiment shown, provision is made in the course of loading thedeposition apparatus 20, for thesubstrate wafer 1 to be placed on a liftingshaft 11 and placed on the susceptor 2 by lowering the liftingshaft 11. A preheating ring 3 is arranged between the side wall of the deposition apparatus and the susceptor 2. - The deposition gas is passed over a front side of the substrate wafer, facing toward the upper dome 17, from a
gas inlet 15 a to agas outlet 16 a, which are arranged at a side wall of the deposition apparatus. Furthermore provided are also acorresponding gas inlet 15 b andgas outlet 16 b for flushing gas, which is passed through the reaction space below the preheating ring 3 and the susceptor 2. Arrows indicate the flow direction of the gas streams. Depending on the width of a gap 5 between the preheating ring and the susceptor, a part of the flushing gas enters the stream of the deposition gas and dilutes the deposition gas. - The reaction space is heated from the outside by banks of
lamps 19, which introduce radiant energy through the upper andlower domes 17 and 18. Thelower dome 18 of thedeposition apparatus 20 is connected to thebase 12 by abellows 25, in order to permit the movement of the supporting shaft 9 and in order to seal the internal space thereby provided against ambient atmosphere flowing in. - A particular feature of the apparatus is a
control device 21, which is configured to displace the supporting shaft 9 periodically by means of at least oneactuator 13 along a direction from thegas inlet gas outlet actuators rotation axis 22 of the supporting shaft 9 is inclined from the vertical toward the preheating ring 3. The additional tilting of the supporting shaft 9 may, for example, be useful in order to bring thesubstrate wafer 1 into a horizontal position if it is not resting horizontally on the susceptor 2 as intended. - It is also advantageous to provide a camera system 7 having image processing 8 in order to check the position of the
substrate wafer 1. The camera system 7 shown inFIG. 2 comprises a camera for the observation of an image section 6 during the rotation of the susceptor 2 by means of the supporting shaft 9. The image section 6 acquires a radially extending region which preferably includes a section of the outer circumference of thesubstrate wafer 1, a section of the outer circumference of the susceptor 2 and a section of the inner circumference of the preheating ring 3, and therefore also a section of the gap 5 between the susceptor 2 and the preheating ring 3. - The
substrate wafer 1 rests in a pocket of the susceptor 2 on a bearing surface 4, so that theback side 23 of thesubstrate wafer 1 has a distance from the bottom 24 of the susceptor 2. The information contained in the image section 6 is evaluated by means of the image processing 8, particularly in relation to the width of the gap 5 and the distance of the camera system 7 from the susceptor 2. - By means of the
control device 21, a check is made as to whether there is an incorrect arrangement of the susceptor 2, and if appropriate a signal is generated which tilts the supporting shaft 9 to such an extent that the substrate wafer moves from the incorrect arrangement into the intended horizontal position. - According to an aspect of the present disclosure, the supporting shaft is periodically displaced along a displacement path from an initial position to a final position and back to the initial position. The start (above) and the end (below) of such a movement as far as the final position of the supporting shaft 9 are outlined in
FIG. 3 . - The
substrate wafer 1 rests centrally on the bearing surface of the susceptor 2. It has a wedge-shaped cross section with athinner edge 26 and athicker edge 27. In the course of a rotation of thesusceptor 1, the thinner edge has the smallest distance from thegas inlet 15 a,b in the initial position of the supporting shaft 9 and the largest distance from thegas inlet 15 a,b in the final position of the supporting shaft 9. Because of the displacement of the supporting shaft 9, the gap 5 between the preheating ring 3 and the susceptor 2 is smaller on the side of thegas inlet 15 a,b in the initial position of the supporting shaft 9, and the effect of dilution by flushing gas which enters the space above the susceptor along the arrow shown as a divided arrow is less. When the thicker edge of the substrate wafer enters the vicinity of thegas inlet 15 a,b during the rotation of the susceptor 2, the gap 5 is larger and so is the dilution effect. This means that more material is deposited overall in the region of thethinner edge 26 than in the region of thethicker edge 27 of thesubstrate wafer 1. -
FIG. 4 represents the way in which the cross section of the substrate wafer with a deposited epitaxial layer (below) changes in comparison with the cross section of the substrate wafer (above). Theepitaxial layer 28 likewise has a wedge-shaped cross section, but one which is complementary to that of thesubstrate wafer 1 so that the coated substrate wafer in the ideal case has plane-parallel side surfaces. - While subject matter of the present disclosure has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative or exemplary and not restrictive. Any statement made herein characterizing the invention is also to be considered illustrative or exemplary and not restrictive as the invention is defined by the claims. It will be understood that changes and modifications may be made, by those of ordinary skill in the art, within the scope of the following claims, which may include any combination of features from different embodiments described above.
- The terms used in the claims should be construed to have the broadest reasonable interpretation consistent with the foregoing description. For example, the use of the article “a” or “the” in introducing an element should not be interpreted as being exclusive of a plurality of elements. Likewise, the recitation of “or” should be interpreted as being inclusive, such that the recitation of “A or B” is not exclusive of “A and B,” unless it is clear from the context or the foregoing description that only one of A and B is intended. Further, the recitation of “at least one of A, B and C” should be interpreted as one or more of a group of elements consisting of A, B and C, and should not be interpreted as requiring at least one of each of the listed elements A, B and C, regardless of whether A, B and C are related as categories or otherwise. Moreover, the recitation of “A, B and/or C” or “at least one of A, B or C” should be interpreted as including any singular entity from the listed elements, e.g., A, any subset from the listed elements, e.g., A and B, or the entire list of elements A, B and C.
-
-
- 1 substrate wafer
- 2 susceptor
- 3 preheating ring
- 4 bearing surface
- 5 gap
- 6 image section
- 7 camera system
- 8 image processing
- 9 supporting shaft
- 10 supporting arm
- 11 lifting shaft
- 12 base
- 13 actuator
- 14 actuator
- 15 a,b gas inlet
- 16 a,b gas outlet
- 17 upper dome
- 18 lower dome
- 19 bank of lamps
- 20 deposition apparatus
- 21 control device
- 22 rotation axis
- 23 back side
- 24 bottom
- 25 bellows
- 26 thinner edge
- 27 thicker edge
- 28 epitaxial layer
Claims (8)
1. A method for depositing an epitaxial layer on a substrate wafer comprising semiconductor material, the substrate wafer having wedge-shaped cross section with a thinner edge and a thicker edge, as compared to each other, the method comprising:
arranging the substrate wafer and a susceptor in a deposition apparatus so that the substrate wafer rests concentrically on the susceptor, and so that the susceptor is held by a supporting shaft;
rotating the supporting shaft with a time period;
passing deposition gas over the substrate wafer in a direction from a gas inlet to a gas outlet;
passing flushing gas with a flow rate along a lower side of a preheating ring and a lower side of the susceptor; and
displacing the supporting shaft with the time period along a displacement path in a direction starting from an initial position, in which the thinner edge has its smallest distance from the gas inlet, to a final position in which the thinner edge has its largest distance from the gas inlet, and back to the initial position.
2. The method as claimed in claim 1 , wherein a length of the displacement path from the initial position to the final position is proportional to a difference between a thicknesses at the thicker edge and a thickness at the thinner edge of the cross section.
3. The method as claimed in claim 1 , the method further comprising:
measuring a shape of the substrate wafer before the deposition of the epitaxial layer; and
varying a speed of the displacement of the supporting shaft as a function of the shape.
4. The method as claimed in claim 1 , the method further comprising:
measuring a shape of the substrate wafer is measured before the deposition of the epitaxial layer; and
varying the flow rate of the flushing gas as a function of the shape.
5. The method as claimed in claim 1 4 , wherein the supporting shaft is tilted toward the preheating ring.
6. An apparatus for depositing an epitaxial layer on a substrate wafer comprising semiconductor material, the apparatus comprising:
a susceptor;
a preheating ring;
a supporting shaft;
at least one actuator configured to displace the supporting shaft; and
a control device configured to control the actuator to periodically displace the supporting shaft along a direction from a gas inlet to a gas outlet during the deposition of the epitaxial layer on the substrate wafer.
7. The apparatus as claimed in claim 6 , further comprising by at least one further actuator configured to tilt the supporting shaft towards the preheating ring.
8. The apparatus as claimed in claim 6 , further comprising a camera system configured to observe an outer edge of the substrate wafer and of a gap between the susceptor and the preheating ring.
Applications Claiming Priority (3)
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EP20199291.4A EP3978647A1 (en) | 2020-09-30 | 2020-09-30 | Method and device for depositing an epitaxial layer on a substrate wafer of semiconductor material |
EP20199291.4 | 2020-09-30 | ||
PCT/EP2021/075795 WO2022069283A1 (en) | 2020-09-30 | 2021-09-20 | Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material |
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US20230366095A1 true US20230366095A1 (en) | 2023-11-16 |
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US18/247,095 Pending US20230366095A1 (en) | 2020-09-30 | 2021-09-20 | Method and device for depositing an epitaxial layer on a substrate wafer made of semiconductor material |
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US (1) | US20230366095A1 (en) |
EP (1) | EP3978647A1 (en) |
JP (1) | JP2023548649A (en) |
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CN (1) | CN116368261A (en) |
IL (1) | IL301752A (en) |
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WO (1) | WO2022069283A1 (en) |
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JP3516918B2 (en) * | 2000-01-19 | 2004-04-05 | 株式会社日立国際電気 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
JP3897963B2 (en) | 2000-07-25 | 2007-03-28 | 株式会社Sumco | Semiconductor wafer and manufacturing method thereof |
TWI287253B (en) * | 2002-09-30 | 2007-09-21 | Adv Lcd Tech Dev Ct Co Ltd | Substrate processing apparatus and substrate processing method |
JP2009267159A (en) | 2008-04-25 | 2009-11-12 | Sumco Techxiv株式会社 | Device and method for manufacturing semiconductor wafer |
EP2684979B1 (en) * | 2011-03-09 | 2015-08-12 | Taiyo Nippon Sanso Corporation | Vapor deposition apparatus |
DE102011007632B3 (en) * | 2011-04-18 | 2012-02-16 | Siltronic Ag | Device useful for depositing material layer derived from process gas on substrate disc, comprises reactor chamber, which is bound by upper cover, lower cover and side wall, susceptor, preheat ring, chuck, and spacer |
KR102398918B1 (en) | 2014-07-11 | 2022-05-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for alignment of a susceptor |
US10249525B2 (en) * | 2016-10-03 | 2019-04-02 | Applied Materials, Inc. | Dynamic leveling process heater lift |
KR20180074273A (en) | 2016-12-23 | 2018-07-03 | 에스케이실트론 주식회사 | Method and apparatus for manufacturing epitaxial wafer |
JP6330941B1 (en) | 2017-03-07 | 2018-05-30 | 株式会社Sumco | Epitaxial growth apparatus, preheat ring, and epitaxial wafer manufacturing method using them |
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2020
- 2020-09-30 EP EP20199291.4A patent/EP3978647A1/en active Pending
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TWI792577B (en) | 2023-02-11 |
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