FR3125352B1 - Cellule mémoire programmable une seule fois - Google Patents

Cellule mémoire programmable une seule fois Download PDF

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Publication number
FR3125352B1
FR3125352B1 FR2107602A FR2107602A FR3125352B1 FR 3125352 B1 FR3125352 B1 FR 3125352B1 FR 2107602 A FR2107602 A FR 2107602A FR 2107602 A FR2107602 A FR 2107602A FR 3125352 B1 FR3125352 B1 FR 3125352B1
Authority
FR
France
Prior art keywords
memory cell
time programmable
programmable memory
channel portion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2107602A
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English (en)
Other versions
FR3125352A1 (fr
Inventor
Lia Masoero
Patrick Calenzo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR2107602A priority Critical patent/FR3125352B1/fr
Priority to US17/861,329 priority patent/US20230019484A1/en
Priority to EP22184345.1A priority patent/EP4120275A1/fr
Priority to CN202221792563.5U priority patent/CN218244271U/zh
Priority to CN202210819607.7A priority patent/CN115623786A/zh
Publication of FR3125352A1 publication Critical patent/FR3125352A1/fr
Application granted granted Critical
Publication of FR3125352B1 publication Critical patent/FR3125352B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Semiconductor Memories (AREA)

Abstract

Cellule mémoire programmable une seule fois La présente description concerne une cellule mémoire programmable une seule fois (OTP) comprenant un transistor (10) comprenant au moins un premier élément conducteur de grille (101) agencé dans au moins une première tranchée (102) formée dans un substrat (25) semiconducteur ; au moins une première portion de canal (103), enterrée dans le substrat (25) et s’étendant au niveau d’au moins une première face latérale (101a) du premier élément conducteur de grille (101); et une capacité (30) apte à former une mémoire ; ladite première portion de canal (103) étant reliée à une électrode de la capacité (30). Figure pour l'abrégé : Fig. 2
FR2107602A 2021-07-13 2021-07-13 Cellule mémoire programmable une seule fois Active FR3125352B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2107602A FR3125352B1 (fr) 2021-07-13 2021-07-13 Cellule mémoire programmable une seule fois
US17/861,329 US20230019484A1 (en) 2021-07-13 2022-07-11 One-time programmable memory cell
EP22184345.1A EP4120275A1 (fr) 2021-07-13 2022-07-12 Cellule mémoire programmable une seule fois
CN202221792563.5U CN218244271U (zh) 2021-07-13 2022-07-12 存储器单元和电子设备
CN202210819607.7A CN115623786A (zh) 2021-07-13 2022-07-12 一次性可编程存储器单元

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2107602A FR3125352B1 (fr) 2021-07-13 2021-07-13 Cellule mémoire programmable une seule fois
FR2107602 2021-07-13

Publications (2)

Publication Number Publication Date
FR3125352A1 FR3125352A1 (fr) 2023-01-20
FR3125352B1 true FR3125352B1 (fr) 2024-05-17

Family

ID=77180276

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2107602A Active FR3125352B1 (fr) 2021-07-13 2021-07-13 Cellule mémoire programmable une seule fois

Country Status (3)

Country Link
US (1) US20230019484A1 (fr)
EP (1) EP4120275A1 (fr)
FR (1) FR3125352B1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683486A (en) * 1984-09-24 1987-07-28 Texas Instruments Incorporated dRAM cell and array
WO2010104918A1 (fr) * 2009-03-10 2010-09-16 Contour Semiconductor, Inc. Matrice de mémoire tridimensionnelle comprenant des commutateurs verticaux à trois terminaux
KR101127446B1 (ko) * 2009-06-05 2012-03-23 매그나칩 반도체 유한회사 비휘발성 메모리 장치의 단위 셀 및 이를 구비한 비휘발성 메모리 장치
US8530312B2 (en) * 2011-08-08 2013-09-10 Micron Technology, Inc. Vertical devices and methods of forming
KR102159925B1 (ko) * 2014-04-10 2020-09-25 삼성전자 주식회사 반도체 장치
JP6822853B2 (ja) * 2016-01-21 2021-01-27 株式会社半導体エネルギー研究所 記憶装置及び記憶装置の駆動方法

Also Published As

Publication number Publication date
EP4120275A1 (fr) 2023-01-18
US20230019484A1 (en) 2023-01-19
FR3125352A1 (fr) 2023-01-20

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