FR3120470B1 - Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite - Google Patents

Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite Download PDF

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Publication number
FR3120470B1
FR3120470B1 FR2102170A FR2102170A FR3120470B1 FR 3120470 B1 FR3120470 B1 FR 3120470B1 FR 2102170 A FR2102170 A FR 2102170A FR 2102170 A FR2102170 A FR 2102170A FR 3120470 B1 FR3120470 B1 FR 3120470B1
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France
Prior art keywords
layers
stack
semiconductor material
capacitor
intermediate layer
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Active
Application number
FR2102170A
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English (en)
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FR3120470A1 (fr
Inventor
Gauthier Chicot
Khaled Driche
David Eon
Etienne Gheeraert
Cédric Masante
Julien Pernot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Diamfab
Centre National de la Recherche Scientifique CNRS
Institut Polytechnique de Grenoble
Universite Grenoble Alpes
Original Assignee
Diamfab
Centre National de la Recherche Scientifique CNRS
Institut Polytechnique de Grenoble
Universite Grenoble Alpes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to FR2102170A priority Critical patent/FR3120470B1/fr
Application filed by Diamfab, Centre National de la Recherche Scientifique CNRS, Institut Polytechnique de Grenoble, Universite Grenoble Alpes filed Critical Diamfab
Priority to US18/549,016 priority patent/US20240154045A1/en
Priority to CN202280018667.7A priority patent/CN117121659A/zh
Priority to PCT/FR2022/050383 priority patent/WO2022185014A1/fr
Priority to KR1020237030118A priority patent/KR20230160240A/ko
Priority to EP22712961.6A priority patent/EP4302339A1/fr
Priority to JP2023553959A priority patent/JP2024510144A/ja
Priority to TW111108009A priority patent/TW202249319A/zh
Publication of FR3120470A1 publication Critical patent/FR3120470A1/fr
Application granted granted Critical
Publication of FR3120470B1 publication Critical patent/FR3120470B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L’invention concerne un condensateur (10) comprenant un empilement de couches (1) en un matériau semi-conducteur présentant une énergie de bande interdite supérieure à 2,3 eV, ledit empilement de couches (1) comportant : - une couche intermédiaire (3), électriquement isolante, présentant une résistivité supérieure à 10 kohm.cm et comprenant des dopants profonds de type n ou p produisant des niveaux d’énergie situés à plus de 0,4 eV de la bande de conduction ou de la bande de valence du matériau semi-conducteur, - deux couches de contact (2a,2b) présentant une résistivité inférieure ou égale à 10 kohm.cm et comprenant des dopants de type opposé à celui des dopants profonds de la couche intermédiaire (3), les deux couches de contact (2a,2b) étant disposées de part et d’autre de la couche intermédiaire (3) pour former deux jonctions pn. Figure à publier avec l’abrégé : Figure 1
FR2102170A 2021-03-05 2021-03-05 Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite Active FR3120470B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2102170A FR3120470B1 (fr) 2021-03-05 2021-03-05 Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite
CN202280018667.7A CN117121659A (zh) 2021-03-05 2022-03-03 包括由具有宽带隙的半导体材料制成的层堆叠体的电容器
PCT/FR2022/050383 WO2022185014A1 (fr) 2021-03-05 2022-03-03 Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite
KR1020237030118A KR20230160240A (ko) 2021-03-05 2022-03-03 와이드 밴드갭을 갖는 반도체 재료로 만들어진 층들의 스택을 포함하는 커패시터
US18/549,016 US20240154045A1 (en) 2021-03-05 2022-03-03 Capacitor comprising a stack of layers made of a semiconductor material having a wide bandgap
EP22712961.6A EP4302339A1 (fr) 2021-03-05 2022-03-03 Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite
JP2023553959A JP2024510144A (ja) 2021-03-05 2022-03-03 ワイドバンドギャップを有する半導体材料で作られた層のスタックを含むキャパシタ
TW111108009A TW202249319A (zh) 2021-03-05 2022-03-04 包含由具有寬帶隙半導電材料所製成之層堆疊之電容

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2102170 2021-03-05
FR2102170A FR3120470B1 (fr) 2021-03-05 2021-03-05 Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite

Publications (2)

Publication Number Publication Date
FR3120470A1 FR3120470A1 (fr) 2022-09-09
FR3120470B1 true FR3120470B1 (fr) 2023-12-29

Family

ID=79171266

Family Applications (1)

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FR2102170A Active FR3120470B1 (fr) 2021-03-05 2021-03-05 Condensateur comprenant un empilement de couches en materiau semi-conducteur a large bande interdite

Country Status (8)

Country Link
US (1) US20240154045A1 (fr)
EP (1) EP4302339A1 (fr)
JP (1) JP2024510144A (fr)
KR (1) KR20230160240A (fr)
CN (1) CN117121659A (fr)
FR (1) FR3120470B1 (fr)
TW (1) TW202249319A (fr)
WO (1) WO2022185014A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI320571B (en) * 2002-09-12 2010-02-11 Qs Semiconductor Australia Pty Ltd Dynamic nonvolatile random access memory ne transistor cell and random access memory array
JP4987707B2 (ja) * 2004-07-07 2012-07-25 トゥー‐シックス・インコーポレイテッド 低ドーピング半絶縁性ＳｉＣ結晶と方法
US20100264426A1 (en) * 2009-04-21 2010-10-21 Christopher Blair Diamond capacitor battery

Also Published As

Publication number Publication date
TW202249319A (zh) 2022-12-16
WO2022185014A1 (fr) 2022-09-09
FR3120470A1 (fr) 2022-09-09
US20240154045A1 (en) 2024-05-09
JP2024510144A (ja) 2024-03-06
CN117121659A (zh) 2023-11-24
KR20230160240A (ko) 2023-11-23
EP4302339A1 (fr) 2024-01-10

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