FR3109849B1 - Dispositif pour charger et décharger une capacité - Google Patents

Dispositif pour charger et décharger une capacité Download PDF

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Publication number
FR3109849B1
FR3109849B1 FR2004327A FR2004327A FR3109849B1 FR 3109849 B1 FR3109849 B1 FR 3109849B1 FR 2004327 A FR2004327 A FR 2004327A FR 2004327 A FR2004327 A FR 2004327A FR 3109849 B1 FR3109849 B1 FR 3109849B1
Authority
FR
France
Prior art keywords
transistor
node
capacity
unloading
loading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2004327A
Other languages
English (en)
Other versions
FR3109849A1 (fr
Inventor
Renald Boulestin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics Grenoble 2 SAS
Priority to FR2004327A priority Critical patent/FR3109849B1/fr
Priority to US17/226,535 priority patent/US11283441B2/en
Publication of FR3109849A1 publication Critical patent/FR3109849A1/fr
Application granted granted Critical
Publication of FR3109849B1 publication Critical patent/FR3109849B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Abstract

Dispositif pour charger et décharger une capacité La présente description concerne un dispositif (1) adapté à fonctionner en alternant des premières et deuxièmes phases de fonctionnement, le dispositif (1) comprenant un premier transistor (T1) et un premier circuit (C1) configuré pour :- relier une première borne de conduction (B11) du premier transistor (T1) à un noeud de sortie (101) du dispositif et une deuxième borne de conduction (B12) du premier transistor (T1) à un premier noeud (103) d'application d'un potentiel (GND) lors de chaque première phase ; et- relier la première borne (B11) du premier transistor (T1) à un deuxième noeud (105) d'application d'un potentiel (VDD) et la deuxième borne de conduction (B12) du premier transistor (T1) au noeud de sortie (101) lors de chaque deuxième phase de fonctionnement. Figure pour l'abrégé : Fig. 1
FR2004327A 2020-04-30 2020-04-30 Dispositif pour charger et décharger une capacité Active FR3109849B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR2004327A FR3109849B1 (fr) 2020-04-30 2020-04-30 Dispositif pour charger et décharger une capacité
US17/226,535 US11283441B2 (en) 2020-04-30 2021-04-09 Device for charging and discharging a capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2004327 2020-04-30
FR2004327A FR3109849B1 (fr) 2020-04-30 2020-04-30 Dispositif pour charger et décharger une capacité

Publications (2)

Publication Number Publication Date
FR3109849A1 FR3109849A1 (fr) 2021-11-05
FR3109849B1 true FR3109849B1 (fr) 2024-01-05

Family

ID=71784228

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2004327A Active FR3109849B1 (fr) 2020-04-30 2020-04-30 Dispositif pour charger et décharger une capacité

Country Status (2)

Country Link
US (1) US11283441B2 (fr)
FR (1) FR3109849B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367210A (en) * 1992-02-12 1994-11-22 Lipp Robert J Output buffer with reduced noise
GB2356304B (en) * 1999-11-10 2003-11-19 Fujitsu Ltd Switch driver circuitry
TWI559113B (zh) * 2015-10-19 2016-11-21 Macroblock Inc Voltage control device
CN114825875A (zh) * 2017-02-17 2022-07-29 富士电机株式会社 绝缘栅型半导体器件驱动电路
US10608625B1 (en) * 2018-09-18 2020-03-31 Infineon Technologies Austria Ag Gate driver with continuously-variable current

Also Published As

Publication number Publication date
US11283441B2 (en) 2022-03-22
FR3109849A1 (fr) 2021-11-05
US20210344339A1 (en) 2021-11-04

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