FR3079242B1 - Procede d'electrodeposition de cobalt - Google Patents
Procede d'electrodeposition de cobalt Download PDFInfo
- Publication number
- FR3079242B1 FR3079242B1 FR1852386A FR1852386A FR3079242B1 FR 3079242 B1 FR3079242 B1 FR 3079242B1 FR 1852386 A FR1852386 A FR 1852386A FR 1852386 A FR1852386 A FR 1852386A FR 3079242 B1 FR3079242 B1 FR 3079242B1
- Authority
- FR
- France
- Prior art keywords
- cobalt
- electrodeposition process
- electrolyte
- cobalt electrodeposition
- additives
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910017052 cobalt Inorganic materials 0.000 title abstract 2
- 239000010941 cobalt Substances 0.000 title abstract 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000004070 electrodeposition Methods 0.000 title 1
- 239000003792 electrolyte Substances 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 229910001429 cobalt ion Inorganic materials 0.000 abstract 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000006259 organic additive Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
La présente invention se rapporte à un procédé de fabrication d'interconnexions en cobalt et à un électrolyte permettant sa mise en œuvre. L'électrolyte de pH inférieur à 4,0 comprend des ions cobalt, des ions chlorure et au plus deux additifs organiques de faible masse moléculaire. Un de ces additifs peut être un acide carboxylique alpha-hydroxylé.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1852386A FR3079242B1 (fr) | 2018-03-20 | 2018-03-20 | Procede d'electrodeposition de cobalt |
FR1855300A FR3079241A1 (fr) | 2018-03-20 | 2018-06-15 | Procede d'electrodeposition de cobalt |
JP2020550759A JP7244533B2 (ja) | 2018-03-20 | 2019-03-15 | コバルト電着プロセス |
KR1020207025940A KR102562157B1 (ko) | 2018-03-20 | 2019-03-15 | 코발트 전착 공정 |
US16/982,421 US11384445B2 (en) | 2018-03-20 | 2019-03-15 | Process for electrodeposition of cobalt |
EP19710697.4A EP3768880A1 (fr) | 2018-03-20 | 2019-03-15 | Procédé d'électrodéposition de cobalt |
PCT/EP2019/056593 WO2019179897A1 (fr) | 2018-03-20 | 2019-03-15 | Procédé d'électrodéposition de cobalt |
CN201980015252.2A CN111771016B (zh) | 2018-03-20 | 2019-03-15 | 用于钴的电沉积的方法 |
TW108109546A TWI804593B (zh) | 2018-03-20 | 2019-03-20 | 電鍍鈷之方法 |
IL276902A IL276902A (en) | 2018-03-20 | 2020-08-24 | Process for electrodeposition of cobalt |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1852386 | 2018-03-20 | ||
FR1852386A FR3079242B1 (fr) | 2018-03-20 | 2018-03-20 | Procede d'electrodeposition de cobalt |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3079242A1 FR3079242A1 (fr) | 2019-09-27 |
FR3079242B1 true FR3079242B1 (fr) | 2020-04-10 |
Family
ID=62948205
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1852386A Active FR3079242B1 (fr) | 2018-03-20 | 2018-03-20 | Procede d'electrodeposition de cobalt |
FR1855300A Pending FR3079241A1 (fr) | 2018-03-20 | 2018-06-15 | Procede d'electrodeposition de cobalt |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1855300A Pending FR3079241A1 (fr) | 2018-03-20 | 2018-06-15 | Procede d'electrodeposition de cobalt |
Country Status (4)
Country | Link |
---|---|
US (1) | US11384445B2 (fr) |
JP (1) | JP7244533B2 (fr) |
KR (1) | KR102562157B1 (fr) |
FR (2) | FR3079242B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11230778B2 (en) * | 2019-12-13 | 2022-01-25 | Macdermid Enthone Inc. | Cobalt chemistry for smooth topology |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3905776A (en) * | 1973-07-05 | 1975-09-16 | Nico Magnetics Inc | Method of making a thin, ferro-magnetic memory layer and article made thereby |
US4441969A (en) * | 1982-03-29 | 1984-04-10 | Omi International Corporation | Coumarin process and nickel electroplating bath |
JPS60190588A (ja) * | 1984-03-12 | 1985-09-28 | Toyo Kohan Co Ltd | 亜鉛または亜鉛合金めつき鋼板の黒色処理方法 |
JPS62109991A (ja) * | 1985-07-29 | 1987-05-21 | C Uyemura & Co Ltd | 電気めつき液 |
US4904353A (en) * | 1988-08-31 | 1990-02-27 | Martin Marietta Corporation | Optically black cobalt surface |
JP2004031586A (ja) * | 2002-06-25 | 2004-01-29 | Sony Corp | 半導体装置の製造方法 |
JP4273085B2 (ja) * | 2005-02-02 | 2009-06-03 | 田中貴金属工業株式会社 | 白金−コバルト合金めっき液及びめっき方法 |
US8372744B2 (en) * | 2007-04-20 | 2013-02-12 | International Business Machines Corporation | Fabricating a contact rhodium structure by electroplating and electroplating composition |
EP2528698A1 (fr) * | 2010-01-29 | 2012-12-05 | Research Triangle Institute | Procédés permettant de former des transducteurs ultrasoniques piézoélectriques et appareils associés |
US20110253545A1 (en) * | 2010-04-19 | 2011-10-20 | International Business Machines Corporation | Method of direct electrodeposition on semiconductors |
JP2012009473A (ja) * | 2010-06-22 | 2012-01-12 | Panasonic Corp | 半導体装置及びその製造方法 |
JP6422658B2 (ja) * | 2014-02-27 | 2018-11-14 | 新光電気工業株式会社 | 電気めっき浴及び電気めっき方法 |
US9758896B2 (en) * | 2015-02-12 | 2017-09-12 | Applied Materials, Inc. | Forming cobalt interconnections on a substrate |
US9777386B2 (en) * | 2015-03-19 | 2017-10-03 | Lam Research Corporation | Chemistry additives and process for cobalt film electrodeposition |
US11035048B2 (en) * | 2017-07-05 | 2021-06-15 | Macdermid Enthone Inc. | Cobalt filling of interconnects |
-
2018
- 2018-03-20 FR FR1852386A patent/FR3079242B1/fr active Active
- 2018-06-15 FR FR1855300A patent/FR3079241A1/fr active Pending
-
2019
- 2019-03-15 JP JP2020550759A patent/JP7244533B2/ja active Active
- 2019-03-15 US US16/982,421 patent/US11384445B2/en active Active
- 2019-03-15 KR KR1020207025940A patent/KR102562157B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR3079242A1 (fr) | 2019-09-27 |
KR20200117024A (ko) | 2020-10-13 |
FR3079241A1 (fr) | 2019-09-27 |
KR102562157B1 (ko) | 2023-08-01 |
JP2021518487A (ja) | 2021-08-02 |
JP7244533B2 (ja) | 2023-03-22 |
US11384445B2 (en) | 2022-07-12 |
US20210079547A1 (en) | 2021-03-18 |
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Legal Events
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Effective date: 20190927 |
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