FR3075775B1 - Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie - Google Patents

Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie Download PDF

Info

Publication number
FR3075775B1
FR3075775B1 FR1762874A FR1762874A FR3075775B1 FR 3075775 B1 FR3075775 B1 FR 3075775B1 FR 1762874 A FR1762874 A FR 1762874A FR 1762874 A FR1762874 A FR 1762874A FR 3075775 B1 FR3075775 B1 FR 3075775B1
Authority
FR
France
Prior art keywords
forming
substrate
chemo
block copolymer
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1762874A
Other languages
English (en)
Other versions
FR3075775A1 (fr
Inventor
Raluca Tiron
Florian Delachat
Ahmed GHARBI
Xavier Chevalier
Christophe Navarro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1762874A priority Critical patent/FR3075775B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to TW107146480A priority patent/TW201936482A/zh
Priority to PCT/EP2018/086594 priority patent/WO2019122334A1/fr
Priority to KR1020207020612A priority patent/KR20200096981A/ko
Priority to JP2020534334A priority patent/JP2021507297A/ja
Priority to US16/954,875 priority patent/US20210088897A1/en
Priority to EP18827109.2A priority patent/EP3729491A1/fr
Publication of FR3075775A1 publication Critical patent/FR3075775A1/fr
Application granted granted Critical
Publication of FR3075775B1 publication Critical patent/FR3075775B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
    • C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0198—Manufacture or treatment of microstructural devices or systems in or on a substrate for making a masking layer
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/02—Homopolymers or copolymers of hydrocarbons
    • C08L25/04—Homopolymers or copolymers of styrene
    • C08L25/06—Polystyrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C08L33/12—Homopolymers or copolymers of methyl methacrylate

Abstract

L'invention concerne un procédé de formation d'une structure de guidage chimique destinée à l'auto-assemblage d'un copolymère à blocs par chémo-épitaxie, ce procédé comprenant les étapes suivantes : - former sur un substrat (100) au moins un motif initial (210) en un premier matériau polymère greffé ayant une première masse molaire et une première affinité chimique vis-à-vis du copolymère à blocs ; - recouvrir le motif initial (210) et une région du substrat adjacente au motif initial d'une couche (150) comprenant un deuxième matériau polymère greffable (160), le deuxième matériau polymère ayant une deuxième masse molaire, supérieure à la première masse molaire, et une deuxième affinité chimique vis-à-vis du copolymère à blocs, différente de la première affinité chimique ; et - greffer le deuxième matériau polymère (160) dans la région adjacente au motif initial (210).
FR1762874A 2017-12-21 2017-12-21 Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie Expired - Fee Related FR3075775B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1762874A FR3075775B1 (fr) 2017-12-21 2017-12-21 Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie
PCT/EP2018/086594 WO2019122334A1 (fr) 2017-12-21 2018-12-21 Procédé de formation d'une structure de guidage chimique sur un substrat et procédé de chémo-épitaxie
KR1020207020612A KR20200096981A (ko) 2017-12-21 2018-12-21 기판 상에 화학적 가이드 구조체 형성 방법 및 케모에피택시 방법
JP2020534334A JP2021507297A (ja) 2017-12-21 2018-12-21 基板上に化学的誘導構造を形成するための方法及び化学エピタキシー法
TW107146480A TW201936482A (zh) 2017-12-21 2018-12-21 在基材上形成化學引導結構的方法及化學磊晶方法
US16/954,875 US20210088897A1 (en) 2017-12-21 2018-12-21 Method for forming a chemical guiding structure on a substrate and chemoepitaxy method
EP18827109.2A EP3729491A1 (fr) 2017-12-21 2018-12-21 Procédé de formation d'une structure de guidage chimique sur un substrat et procédé de chémo-épitaxie

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1762874A FR3075775B1 (fr) 2017-12-21 2017-12-21 Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie
FR1762874 2017-12-21

Publications (2)

Publication Number Publication Date
FR3075775A1 FR3075775A1 (fr) 2019-06-28
FR3075775B1 true FR3075775B1 (fr) 2020-01-17

Family

ID=61802124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1762874A Expired - Fee Related FR3075775B1 (fr) 2017-12-21 2017-12-21 Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie

Country Status (7)

Country Link
US (1) US20210088897A1 (fr)
EP (1) EP3729491A1 (fr)
JP (1) JP2021507297A (fr)
KR (1) KR20200096981A (fr)
FR (1) FR3075775B1 (fr)
TW (1) TW201936482A (fr)
WO (1) WO2019122334A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230157722A (ko) 2022-05-10 2023-11-17 한국과학기술원 하이브리드 열 통합을 이용한 디메틸 카보네이트 반응증류 제조 장치 및 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102394998B1 (ko) * 2013-09-04 2022-05-04 도쿄엘렉트론가부시키가이샤 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리
FR3075774B1 (fr) * 2017-12-21 2021-07-30 Commissariat Energie Atomique Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie
FR3102294A1 (fr) * 2019-10-16 2021-04-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de formation d’une structure de guidage chimique sur un substrat et procédé de chémo-épitaxie

Also Published As

Publication number Publication date
EP3729491A1 (fr) 2020-10-28
TW201936482A (zh) 2019-09-16
FR3075775A1 (fr) 2019-06-28
WO2019122334A1 (fr) 2019-06-27
JP2021507297A (ja) 2021-02-22
US20210088897A1 (en) 2021-03-25
KR20200096981A (ko) 2020-08-14

Similar Documents

Publication Publication Date Title
FR3075774B1 (fr) Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie
TW200802421A (en) Methods for forming improved self-assembled patterns of block copolymers
CN108602251A (zh) 用于增材制造的柔性基底的系统和方法
FR2927005B1 (fr) Materiau hybride organique-inorganique, couche mince optique de ce materiau, materiau optique les comprenant, et leur procede de fabrication
US8286785B2 (en) Solar cell transport
WO2009004774A1 (fr) Substrat polyimide stratifié métallique, et son procédé de production
FR3075775B1 (fr) Procede de formation d’une structure de guidage chimique sur un substrat et procede de chemo-epitaxie
JP2017509647A5 (fr)
JP2009522186A (ja) エレベータシステムで使用されるシーブ
FR3033554B1 (fr) Procede de formation d'un dispositif en graphene
WO2009083487A3 (fr) Procédé de fabrication d'une microstructure métallique et microstructure obtenue selon ce procédé
WO2011053622A3 (fr) Composition de revêtement résistant à la salissure et aux taches pour substrats en cuir fini
MA50349B1 (fr) Procédé de traitement de tôle métallique
BRPI0906180A2 (pt) composição de revestimento, processo para produzir uma composição de revestimento, artigo e processo para confeccionar um artigo
FR3082765B1 (fr) Procede de fabrication d'une couche abradable
FR3077828B1 (fr) Composition pour surface sportive, notamment de sport equestre, et procede de fabrication d'une telle composition
JP2015198121A5 (fr)
US10435249B2 (en) Conveying device
FR3019180B1 (fr) Composition d'elastomere thermoplastique pour encapsulation
FR3060422B1 (fr) Procede de fonctionnalisation d'un substrat
JP6583518B1 (ja) コンベヤベルト用ゴム組成物及びコンベヤベルト
FR3085389B1 (fr) Procede de gravure d’un copolymere a blocs comprenant une etape de depot selectif
FR2969628B1 (fr) Procede de revetement par greffage chimique electrocatalyse d'une surface d'un substrat par une couche polymere.
TW202015162A (zh) 基板處理裝置及用於處理基板之方法
FR3079637B1 (fr) Procede d'evaluation de la conformite d'un systeme de pistage a un ensemble d'exigences et dispositifs associes

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20190628

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

ST Notification of lapse

Effective date: 20220808