FR2996676B1 - Circuit de reference pour compenser des variations de pvt dans des amplificateurs de lecture a simple entree - Google Patents

Circuit de reference pour compenser des variations de pvt dans des amplificateurs de lecture a simple entree

Info

Publication number
FR2996676B1
FR2996676B1 FR1259685A FR1259685A FR2996676B1 FR 2996676 B1 FR2996676 B1 FR 2996676B1 FR 1259685 A FR1259685 A FR 1259685A FR 1259685 A FR1259685 A FR 1259685A FR 2996676 B1 FR2996676 B1 FR 2996676B1
Authority
FR
France
Prior art keywords
reference circuit
single input
input reading
pvt variations
reading amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1259685A
Other languages
English (en)
Other versions
FR2996676A1 (fr
Inventor
Roland Thewes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1259685A priority Critical patent/FR2996676B1/fr
Priority to SG11201502532QA priority patent/SG11201502532QA/en
Priority to US14/434,579 priority patent/US9478275B2/en
Priority to KR1020157010347A priority patent/KR102107718B1/ko
Priority to CN201380053038.9A priority patent/CN104718575B/zh
Priority to PCT/EP2013/071159 priority patent/WO2014057033A1/fr
Publication of FR2996676A1 publication Critical patent/FR2996676A1/fr
Application granted granted Critical
Publication of FR2996676B1 publication Critical patent/FR2996676B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
FR1259685A 2012-10-10 2012-10-10 Circuit de reference pour compenser des variations de pvt dans des amplificateurs de lecture a simple entree Active FR2996676B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1259685A FR2996676B1 (fr) 2012-10-10 2012-10-10 Circuit de reference pour compenser des variations de pvt dans des amplificateurs de lecture a simple entree
SG11201502532QA SG11201502532QA (en) 2012-10-10 2013-10-10 Reference circuit to compensate for pvt variations in single-ended sense amplifiers
US14/434,579 US9478275B2 (en) 2012-10-10 2013-10-10 Reference circuit to compensate for PVT variations in single-ended sense amplifiers
KR1020157010347A KR102107718B1 (ko) 2012-10-10 2013-10-10 단일-종단 감지 증폭기들에서 ｐｖｔ 변동들을 보상하는 기준 회로
CN201380053038.9A CN104718575B (zh) 2012-10-10 2013-10-10 用于补偿单端感测放大器中pvt变化的参考电路
PCT/EP2013/071159 WO2014057033A1 (fr) 2012-10-10 2013-10-10 Circuit de référence permettant de compenser des variations pvt dans des amplificateurs de lecture à sortie unique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1259685A FR2996676B1 (fr) 2012-10-10 2012-10-10 Circuit de reference pour compenser des variations de pvt dans des amplificateurs de lecture a simple entree

Publications (2)

Publication Number Publication Date
FR2996676A1 FR2996676A1 (fr) 2014-04-11
FR2996676B1 true FR2996676B1 (fr) 2015-11-27

Family

ID=47598889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1259685A Active FR2996676B1 (fr) 2012-10-10 2012-10-10 Circuit de reference pour compenser des variations de pvt dans des amplificateurs de lecture a simple entree

Country Status (6)

Country Link
US (1) US9478275B2 (fr)
KR (1) KR102107718B1 (fr)
CN (1) CN104718575B (fr)
FR (1) FR2996676B1 (fr)
SG (1) SG11201502532QA (fr)
WO (1) WO2014057033A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3005195B1 (fr) * 2013-04-24 2016-09-02 Soitec Silicon On Insulator Dispositif de memoire avec circuits de reference exploites dynamiquement.
CN107958688B (zh) * 2016-10-17 2020-04-17 旺宏电子股份有限公司 非易失性存储装置的感测电路及方法
US10777255B2 (en) 2018-03-19 2020-09-15 Samsung Electronics Co., Ltd. Control signal generator for sense amplifier and memory device including the control signal generator
US10796734B1 (en) * 2019-05-24 2020-10-06 Micron Technology, Inc. Apparatuses including temperature-based threshold voltage compensated sense amplifiers and methods for compensating same
US11508455B1 (en) 2021-06-09 2022-11-22 Micron Technology, Inc. Signal drop compensated memory
CN116580735B (zh) * 2023-07-12 2023-12-01 长鑫存储技术有限公司 单端感测放大器以及存储器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7139196B2 (en) * 1999-01-14 2006-11-21 Silicon Storage Technology, Inc. Sub-volt sensing for digital multilevel flash memory
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6975539B2 (en) * 1999-01-14 2005-12-13 Silicon Storage Technology, Inc. Digital multilevel non-volatile memory system
US7251178B2 (en) * 2004-09-07 2007-07-31 Infineon Technologies Ag Current sense amplifier
US7330388B1 (en) * 2005-09-23 2008-02-12 Cypress Semiconductor Corporation Sense amplifier circuit and method of operation
JP2008059680A (ja) * 2006-08-31 2008-03-13 Hitachi Ltd 半導体装置
JP5529450B2 (ja) * 2009-07-15 2014-06-25 スパンション エルエルシー ボディバイアス制御回路及びボディバイアス制御方法
EP2365487A3 (fr) 2010-03-11 2011-09-21 S.O.I. Tec Silicon on Insulator Technologies Nano-amplificateur de lecture pour une mémoire
US8279688B2 (en) * 2010-07-26 2012-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Sense amplifier enable signal generation

Also Published As

Publication number Publication date
KR102107718B1 (ko) 2020-05-07
SG11201502532QA (en) 2015-04-29
WO2014057033A1 (fr) 2014-04-17
CN104718575A (zh) 2015-06-17
KR20150068403A (ko) 2015-06-19
US20150279448A1 (en) 2015-10-01
US9478275B2 (en) 2016-10-25
FR2996676A1 (fr) 2014-04-11
CN104718575B (zh) 2017-11-14

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