SG11201502532QA - Reference circuit to compensate for pvt variations in single-ended sense amplifiers - Google Patents
Reference circuit to compensate for pvt variations in single-ended sense amplifiersInfo
- Publication number
- SG11201502532QA SG11201502532QA SG11201502532QA SG11201502532QA SG11201502532QA SG 11201502532Q A SG11201502532Q A SG 11201502532QA SG 11201502532Q A SG11201502532Q A SG 11201502532QA SG 11201502532Q A SG11201502532Q A SG 11201502532QA SG 11201502532Q A SG11201502532Q A SG 11201502532QA
- Authority
- SG
- Singapore
- Prior art keywords
- compensate
- sense amplifiers
- reference circuit
- pvt variations
- ended sense
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1259685A FR2996676B1 (en) | 2012-10-10 | 2012-10-10 | REFERENCE CIRCUIT FOR COMPENSATING PVT VARIATIONS IN SINGLE INPUT READING AMPLIFIERS |
| PCT/EP2013/071159 WO2014057033A1 (en) | 2012-10-10 | 2013-10-10 | Reference circuit to compensate for pvt variations in single-ended sense amplifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201502532QA true SG11201502532QA (en) | 2015-04-29 |
Family
ID=47598889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201502532QA SG11201502532QA (en) | 2012-10-10 | 2013-10-10 | Reference circuit to compensate for pvt variations in single-ended sense amplifiers |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9478275B2 (en) |
| KR (1) | KR102107718B1 (en) |
| CN (1) | CN104718575B (en) |
| FR (1) | FR2996676B1 (en) |
| SG (1) | SG11201502532QA (en) |
| WO (1) | WO2014057033A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3005195B1 (en) * | 2013-04-24 | 2016-09-02 | Soitec Silicon On Insulator | MEMORY DEVICE WITH DYNAMICALLY OPERATED REFERENCE CIRCUITS. |
| CN107958688B (en) * | 2016-10-17 | 2020-04-17 | 旺宏电子股份有限公司 | Sensing circuit and method for nonvolatile memory device |
| US10777255B2 (en) | 2018-03-19 | 2020-09-15 | Samsung Electronics Co., Ltd. | Control signal generator for sense amplifier and memory device including the control signal generator |
| US10796734B1 (en) * | 2019-05-24 | 2020-10-06 | Micron Technology, Inc. | Apparatuses including temperature-based threshold voltage compensated sense amplifiers and methods for compensating same |
| US11508455B1 (en) | 2021-06-09 | 2022-11-22 | Micron Technology, Inc. | Signal drop compensated memory |
| CN116580735B (en) * | 2023-07-12 | 2023-12-01 | 长鑫存储技术有限公司 | Single-ended sense amplifier and memory |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282145B1 (en) * | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
| US7139196B2 (en) * | 1999-01-14 | 2006-11-21 | Silicon Storage Technology, Inc. | Sub-volt sensing for digital multilevel flash memory |
| US6975539B2 (en) * | 1999-01-14 | 2005-12-13 | Silicon Storage Technology, Inc. | Digital multilevel non-volatile memory system |
| US7251178B2 (en) * | 2004-09-07 | 2007-07-31 | Infineon Technologies Ag | Current sense amplifier |
| US7330388B1 (en) * | 2005-09-23 | 2008-02-12 | Cypress Semiconductor Corporation | Sense amplifier circuit and method of operation |
| JP2008059680A (en) * | 2006-08-31 | 2008-03-13 | Hitachi Ltd | Semiconductor device |
| JP5529450B2 (en) * | 2009-07-15 | 2014-06-25 | スパンション エルエルシー | Body bias control circuit and body bias control method |
| EP2365487A3 (en) | 2010-03-11 | 2011-09-21 | S.O.I. Tec Silicon on Insulator Technologies | Nano-sense amplifier for memory |
| US8279688B2 (en) * | 2010-07-26 | 2012-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sense amplifier enable signal generation |
-
2012
- 2012-10-10 FR FR1259685A patent/FR2996676B1/en active Active
-
2013
- 2013-10-10 SG SG11201502532QA patent/SG11201502532QA/en unknown
- 2013-10-10 WO PCT/EP2013/071159 patent/WO2014057033A1/en active Application Filing
- 2013-10-10 US US14/434,579 patent/US9478275B2/en active Active
- 2013-10-10 KR KR1020157010347A patent/KR102107718B1/en active IP Right Grant
- 2013-10-10 CN CN201380053038.9A patent/CN104718575B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104718575B (en) | 2017-11-14 |
| US9478275B2 (en) | 2016-10-25 |
| KR102107718B1 (en) | 2020-05-07 |
| CN104718575A (en) | 2015-06-17 |
| FR2996676B1 (en) | 2015-11-27 |
| WO2014057033A1 (en) | 2014-04-17 |
| FR2996676A1 (en) | 2014-04-11 |
| US20150279448A1 (en) | 2015-10-01 |
| KR20150068403A (en) | 2015-06-19 |
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