FR2977368B1 - Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants - Google Patents

Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants

Info

Publication number
FR2977368B1
FR2977368B1 FR1155877A FR1155877A FR2977368B1 FR 2977368 B1 FR2977368 B1 FR 2977368B1 FR 1155877 A FR1155877 A FR 1155877A FR 1155877 A FR1155877 A FR 1155877A FR 2977368 B1 FR2977368 B1 FR 2977368B1
Authority
FR
France
Prior art keywords
semiconductor material
wafer
plate
silicon
induced local
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1155877A
Other languages
English (en)
Other versions
FR2977368A1 (fr
Inventor
Mohamed Bouchoucha
Pascal Chausse
Laurent-Luc Chapelon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics Crolles 2 SAS, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1155877A priority Critical patent/FR2977368B1/fr
Priority to US13/524,699 priority patent/US8726736B2/en
Publication of FR2977368A1 publication Critical patent/FR2977368A1/fr
Application granted granted Critical
Publication of FR2977368B1 publication Critical patent/FR2977368B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
FR1155877A 2011-06-30 2011-06-30 Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants Expired - Fee Related FR2977368B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1155877A FR2977368B1 (fr) 2011-06-30 2011-06-30 Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants
US13/524,699 US8726736B2 (en) 2011-06-30 2012-06-15 Method for determining the local stress induced in a semiconductor material wafer by through vias

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1155877A FR2977368B1 (fr) 2011-06-30 2011-06-30 Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants

Publications (2)

Publication Number Publication Date
FR2977368A1 FR2977368A1 (fr) 2013-01-04
FR2977368B1 true FR2977368B1 (fr) 2014-01-31

Family

ID=44584237

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1155877A Expired - Fee Related FR2977368B1 (fr) 2011-06-30 2011-06-30 Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants

Country Status (2)

Country Link
US (1) US8726736B2 (fr)
FR (1) FR2977368B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10209300B2 (en) * 2015-11-12 2019-02-19 Rudolph Technologies, Inc. Opto-acoustic metrology of signal attenuating structures

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6441396B1 (en) * 2000-10-24 2002-08-27 International Business Machines Corporation In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US6902316B1 (en) * 2004-02-05 2005-06-07 The United States Of America As Represented By The Secretary Of The Navy Non-invasive corrosion sensor
JP2008311455A (ja) * 2007-06-15 2008-12-25 Nec Electronics Corp 半導体装置の耐熱応力評価方法、及び評価素子を有する半導体ウエハ
US7898063B2 (en) * 2008-02-16 2011-03-01 International Business Machines Corporation Through substrate annular via including plug filler
EP2286449A1 (fr) * 2008-05-30 2011-02-23 Nxp B.V. Contrainte thermomecanique dans des plaquettes semi-conductrices
US8048689B2 (en) * 2008-09-25 2011-11-01 Globalfoundries Inc. Semiconductor chip with backside conductor structure
DE102009055661A1 (de) * 2009-11-25 2011-05-26 Eos Gmbh Electro Optical Systems Verfahren zum Herstellen eines dreidimensionalen Objekts

Also Published As

Publication number Publication date
US8726736B2 (en) 2014-05-20
FR2977368A1 (fr) 2013-01-04
US20130112974A1 (en) 2013-05-09

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