FR2977368B1 - Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants - Google Patents
Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversantsInfo
- Publication number
- FR2977368B1 FR2977368B1 FR1155877A FR1155877A FR2977368B1 FR 2977368 B1 FR2977368 B1 FR 2977368B1 FR 1155877 A FR1155877 A FR 1155877A FR 1155877 A FR1155877 A FR 1155877A FR 2977368 B1 FR2977368 B1 FR 2977368B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor material
- wafer
- plate
- silicon
- induced local
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000011326 mechanical measurement Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1155877A FR2977368B1 (fr) | 2011-06-30 | 2011-06-30 | Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants |
US13/524,699 US8726736B2 (en) | 2011-06-30 | 2012-06-15 | Method for determining the local stress induced in a semiconductor material wafer by through vias |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1155877A FR2977368B1 (fr) | 2011-06-30 | 2011-06-30 | Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2977368A1 FR2977368A1 (fr) | 2013-01-04 |
FR2977368B1 true FR2977368B1 (fr) | 2014-01-31 |
Family
ID=44584237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1155877A Expired - Fee Related FR2977368B1 (fr) | 2011-06-30 | 2011-06-30 | Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants |
Country Status (2)
Country | Link |
---|---|
US (1) | US8726736B2 (fr) |
FR (1) | FR2977368B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10209300B2 (en) * | 2015-11-12 | 2019-02-19 | Rudolph Technologies, Inc. | Opto-acoustic metrology of signal attenuating structures |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6441396B1 (en) * | 2000-10-24 | 2002-08-27 | International Business Machines Corporation | In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer |
US6678055B2 (en) * | 2001-11-26 | 2004-01-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for measuring stress in semiconductor wafers |
US6902316B1 (en) * | 2004-02-05 | 2005-06-07 | The United States Of America As Represented By The Secretary Of The Navy | Non-invasive corrosion sensor |
JP2008311455A (ja) * | 2007-06-15 | 2008-12-25 | Nec Electronics Corp | 半導体装置の耐熱応力評価方法、及び評価素子を有する半導体ウエハ |
US7898063B2 (en) * | 2008-02-16 | 2011-03-01 | International Business Machines Corporation | Through substrate annular via including plug filler |
EP2286449A1 (fr) * | 2008-05-30 | 2011-02-23 | Nxp B.V. | Contrainte thermomecanique dans des plaquettes semi-conductrices |
US8048689B2 (en) * | 2008-09-25 | 2011-11-01 | Globalfoundries Inc. | Semiconductor chip with backside conductor structure |
DE102009055661A1 (de) * | 2009-11-25 | 2011-05-26 | Eos Gmbh Electro Optical Systems | Verfahren zum Herstellen eines dreidimensionalen Objekts |
-
2011
- 2011-06-30 FR FR1155877A patent/FR2977368B1/fr not_active Expired - Fee Related
-
2012
- 2012-06-15 US US13/524,699 patent/US8726736B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8726736B2 (en) | 2014-05-20 |
FR2977368A1 (fr) | 2013-01-04 |
US20130112974A1 (en) | 2013-05-09 |
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FR2977368B1 (fr) | Procede de determination des contraintes locales induites dans une plaquette de materiau semiconducteur par des vias traversants | |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 6 |
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PLFP | Fee payment |
Year of fee payment: 7 |
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PLFP | Fee payment |
Year of fee payment: 8 |
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PLFP | Fee payment |
Year of fee payment: 10 |
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PLFP | Fee payment |
Year of fee payment: 11 |
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PLFP | Fee payment |
Year of fee payment: 12 |
|
ST | Notification of lapse |
Effective date: 20240205 |