FR2968831B1 - Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes - Google Patents

Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes

Info

Publication number
FR2968831B1
FR2968831B1 FR1060271A FR1060271A FR2968831B1 FR 2968831 B1 FR2968831 B1 FR 2968831B1 FR 1060271 A FR1060271 A FR 1060271A FR 1060271 A FR1060271 A FR 1060271A FR 2968831 B1 FR2968831 B1 FR 2968831B1
Authority
FR
France
Prior art keywords
template layer
methods
nitride semiconductor
structures formed
formed therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1060271A
Other languages
English (en)
French (fr)
Other versions
FR2968831A1 (fr
Inventor
Chantal Arena
Ronald Thomas Bertram
Ed Lindow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1060271A priority Critical patent/FR2968831B1/fr
Priority to TW100131354A priority patent/TWI436409B/zh
Priority to JP2013539299A priority patent/JP5892447B2/ja
Priority to US13/988,987 priority patent/US9023721B2/en
Priority to CN201180056320.3A priority patent/CN103221586B/zh
Priority to KR1020137015095A priority patent/KR20130122640A/ko
Priority to DE112011103869T priority patent/DE112011103869T5/de
Priority to PCT/EP2011/070771 priority patent/WO2012069520A1/en
Publication of FR2968831A1 publication Critical patent/FR2968831A1/fr
Application granted granted Critical
Publication of FR2968831B1 publication Critical patent/FR2968831B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1060271A 2010-11-23 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes Expired - Fee Related FR2968831B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1060271A FR2968831B1 (fr) 2010-12-08 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes
TW100131354A TWI436409B (zh) 2010-11-23 2011-08-31 於金屬-氮化物生長模片層上形成主體三族-氮化物材料之方法及應用此等方法所形成之構造
US13/988,987 US9023721B2 (en) 2010-11-23 2011-11-23 Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
CN201180056320.3A CN103221586B (zh) 2010-11-23 2011-11-23 在金属氮化物生长模板层上形成块状iii族氮化物材料的方法以及由所述方法形成的结构体
JP2013539299A JP5892447B2 (ja) 2010-11-23 2011-11-23 金属窒化物成長テンプレート層上にバルクｉｉｉ族窒化物材料を形成する方法、及びその方法によって形成される構造体
KR1020137015095A KR20130122640A (ko) 2010-11-23 2011-11-23 금속-질화물 성장 템플레이트층들 상에 벌크 iii-질화물 물질들을 형성하는 방법들 및 그와 같은 방법들에 의해 형성되는 구조들
DE112011103869T DE112011103869T5 (de) 2010-11-23 2011-11-23 Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind
PCT/EP2011/070771 WO2012069520A1 (en) 2010-11-23 2011-11-23 Methods of forming bulk iii-nitride materials on metal-nitride growth template layers, and structures formed by such methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1060271A FR2968831B1 (fr) 2010-12-08 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes

Publications (2)

Publication Number Publication Date
FR2968831A1 FR2968831A1 (fr) 2012-06-15
FR2968831B1 true FR2968831B1 (fr) 2012-12-21

Family

ID=43920644

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1060271A Expired - Fee Related FR2968831B1 (fr) 2010-11-23 2010-12-08 Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes

Country Status (7)

Country Link
JP (1) JP5892447B2 (ko)
KR (1) KR20130122640A (ko)
CN (1) CN103221586B (ko)
DE (1) DE112011103869T5 (ko)
FR (1) FR2968831B1 (ko)
TW (1) TWI436409B (ko)
WO (1) WO2012069520A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101713718B1 (ko) * 2015-02-23 2017-03-08 현대자동차 주식회사 연료전지용 분리판의 코팅 방법 및 연료전지용 분리판
CN106012022A (zh) * 2016-08-01 2016-10-12 中国电子科技集团公司第四十六研究所 一种提高半绝缘氮化镓单晶电阻率均匀性的Fe掺杂方法
JP7180984B2 (ja) * 2018-03-01 2022-11-30 株式会社ニューフレアテクノロジー 気相成長方法
CN109468680A (zh) * 2018-12-19 2019-03-15 东莞市中镓半导体科技有限公司 一种应用于氢化物气相外延设备的气体预热装置
TWI832407B (zh) * 2022-09-01 2024-02-11 財團法人金屬工業研究發展中心 電漿輔助退火系統及其退火方法
KR102546997B1 (ko) * 2022-12-02 2023-06-23 이상주 반도체 배기가스 처리장치

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610106A (en) 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US6221174B1 (en) 1999-02-11 2001-04-24 Applied Materials, Inc. Method of performing titanium/titanium nitride integration
US6179913B1 (en) 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
JP2001217193A (ja) * 2000-02-01 2001-08-10 Namiki Precision Jewel Co Ltd ＡｌＮバッファ層の作成方法、ＡｌＮバッファ層、ＧａＮ単結晶膜の作成方法およびＧａＮ単結晶膜
ATE528421T1 (de) 2000-11-30 2011-10-15 Univ North Carolina State Verfahren zur herstellung von gruppe-iii- metallnitrid-materialien
JP3946448B2 (ja) * 2001-02-08 2007-07-18 日亜化学工業株式会社 窒化物半導体基板の製造方法
EP1374282A1 (en) * 2001-02-27 2004-01-02 CBL Technologies Hybrid deposition system & methods
KR101086155B1 (ko) * 2002-12-16 2011-11-25 독립행정법인 과학기술진흥기구 수소화합물 기상 성장법에 의한 평면, 비극성 질화 갈륨의 성장
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
JP4361747B2 (ja) * 2003-03-04 2009-11-11 東京エレクトロン株式会社 薄膜の形成方法
JP4765025B2 (ja) * 2004-02-05 2011-09-07 農工大ティー・エル・オー株式会社 ＡｌＮエピタキシャル層の成長方法及び気相成長装置
JP2005343736A (ja) * 2004-06-02 2005-12-15 Crystal System:Kk 単結晶製造方法とその装置
JP2006096588A (ja) * 2004-09-28 2006-04-13 Sumitomo Electric Ind Ltd 窒化ガリウム独立基板を製造する方法
US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
JP4860309B2 (ja) * 2006-03-17 2012-01-25 日本碍子株式会社 Ｉｉｉ族窒化物結晶の作製装置およびｉｉｉ族窒化物結晶の積層構造体の作製方法
WO2008127425A2 (en) * 2006-11-22 2008-10-23 S.O.I.Tec Silicon On Insulator Technologies Abatement of reaction gases from gallium nitride deposition
US8382898B2 (en) 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
US7915147B2 (en) 2007-09-21 2011-03-29 Seoul Opto Device Co., Ltd. Group III nitride compound semiconductor device
WO2009045217A1 (en) * 2007-10-04 2009-04-09 Applied Materials, Inc. Parasitic particle suppression in the growth of iii-v nitride films using mocvd and hvpe
CN101918611B (zh) 2008-02-27 2012-09-26 硅绝缘体技术有限公司 Cvd反应器中气态前体的热化
KR101308523B1 (ko) 2009-03-03 2013-09-17 소이텍 Ｃｖｄ 시스템을 위한 가스 인젝터들
JP2010251705A (ja) * 2009-03-24 2010-11-04 Nuflare Technology Inc 成膜装置および成膜方法

Also Published As

Publication number Publication date
TW201250791A (en) 2012-12-16
KR20130122640A (ko) 2013-11-07
JP2014502246A (ja) 2014-01-30
CN103221586B (zh) 2016-08-10
WO2012069520A1 (en) 2012-05-31
CN103221586A (zh) 2013-07-24
TWI436409B (zh) 2014-05-01
JP5892447B2 (ja) 2016-03-23
DE112011103869T5 (de) 2013-08-22
FR2968831A1 (fr) 2012-06-15

Similar Documents

Publication Publication Date Title
FR2968831B1 (fr) Procedes de formation de materiaux massifs de nitrure iii sur des couches matricielles de croissance de nitrure de metal et structures formees par ces procedes
WO2015027080A3 (en) Selective deposition of diamond in thermal vias
WO2009023100A3 (en) Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure
WO2010127156A3 (en) Method of forming in-situ pre-gan deposition layer in hvpe
WO2009137199A3 (en) Boron nitride and boron-nitride derived materials deposition method
WO2010033813A3 (en) Formation of devices by epitaxial layer overgrowth
TW200612473A (en) Mask material conversion
WO2011044046A3 (en) Improved multichamber split processes for led manufacturing
WO2012002995A3 (en) Thin films and methods of making them using cyclohexasilane
EP2439316A4 (en) NITRIDE-SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREFOR
EP2112729A3 (en) Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser
WO2010080216A3 (en) Precursor addition to silicon oxide cvd for improved low temperature gapfill
FR2977260B1 (fr) Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
MX370001B (es) Método para depositar una capa delgada y su producto obtenido.
WO2011123217A3 (en) Silicon-ozone cvd with reduced pattern loading using incubation period deposition
SG155840A1 (en) A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
WO2006107532A3 (en) Single wafer thermal cvd processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon
WO2010055423A3 (en) Tellurium precursors for film deposition
CN106206258B (zh) 在硅衬底上形成GaN层的方法以及GaN衬底
TW200719433A (en) Growth controlled vertical transistor
WO2015076982A3 (en) Stress mitigating amorphous sio2 interlayer
TW200723365A (en) Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
WO2011025291A3 (ko) 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
TW200603267A (en) Method for making compound semiconductor and method for making semiconductor device
WO2013025631A3 (en) Methods for manufacturing architectural constructs

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20130109

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

ST Notification of lapse

Effective date: 20190905